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                               Eudyna/FUJITSU

1、详细资料目录/应用资料下载   2、 应用图文简介1  3、应用选择资料2  4、应用选择资料3

5FUJITSU/EUDYNA公司详细产品资料目录手册/应用资料下载 

FUJITSU富士通已经与SUMITOMO住友电气工业达成成立一间专注于化合物半导体业务的合资企业优迪那半导体有限公司EUDYNA的决议。 这份决议将整和以及巩固富士通旗下的全资子公司富士通量子器件株式会社与住友电气工业两家公司的化合物半导体电子器件业务。富士通与住友电气工业将各占这间合资企业50%的股份。
这间新的合资公司优迪那半导体有限公司将专注于研究开发, 制造和销售覆盖各种用途的化合物半导体器件, 并致力于成长为这个领域科技发展的领导者, 以迅速地建立全球客户的信任.
               Optical Semiconductors 
               激光二极管模块 
               光电二极管探测器与光接收器模块 
               光收发器模块
               可视激光二极管
               微波器件
Sumitomo 住友电气工业设计、生产并销售基于GaAs技术制成的组件、集成电路和模块产品。电子设备部门(EDD)专注于Ⅲ-Ⅳ组件产业,供应先进和优良的产品,用于光纤通讯系统的前端模拟电路,并可提供给客户多样化的标准产品。现今,本公司已可提供10Gb/s SONET/SDH/ATM的丰富产品系列;而基于InP的40Gb/s IC也在迅速发展中,很快也将被列入我们的产品系列之中。本公司生产无线及光纤产品,以及专注于包含了epitaxial water process技术的行动/无线基站经营,顾客可选择采用以离子注入(Ion-implantation)及Epitaxial组件技术为本的多种GaAs MESFET 制作法.
        光纤产品GaAs IC 
               F01 Series 前置放大器IC  
               F03 Series 限制放大器IC  
               F05 Series LD驱动IC  
               F06 Series LED驱动IC  
              F08 Series PD/APD前置放大器模
        无线产品GaAs IC 
              P01 Series 中等功率FET  
              P04 Series PDC/GSM/AMPS基站/推进器  
              P05 Series PHS基站  
              P06 Series CDMA/PCS基站

砷化镓FET芯片和HEMT芯片
--通用砷化镓场效应晶体管(FET)芯片
--低噪音高电子迁移率晶体管(HEMT)芯片
超低噪音已封装HEMT
--超低噪音已封装高电子迁移率晶体管(HEMT)
分立砷化镓FET
--通用砷化镓场效应晶体管(FET)
--移动通信用L波段高功率砷化镓场效应晶体管(FET)
--通用功率砷化镓场效应晶体管(FET)芯片
内部匹配型功率FET
--低失真内部匹配型砷化镓场效应晶体管(FET)
砷化镓MMIC
--移动通信用单片微波集成电路(MMIC)驱动放大器
--14GHz波段VSAT用单片微波集成电路(MMIC)功率放大器
--准毫米波单片微波集成电路(MMIC)
--直播卫星(DBS)用单片微波集成电路(MMIC)
--砷化镓微波分频器(Prescalar)集成电路
GaAs FET Chips and HEMT Chips
GaAs FET Chips for General Purpose Applications
Part Number
Output Power at 1dB G.C.P
P 1dB (typ)
(dBm)
Power Gain at 1dB G.C.P
G 1dB (typ)
(dB)
Power-added Efficiency
η add (typ)
(%)
frequency
f
(GHz)
Drain Source Voltage
V DS
(V)
Drain Source Current
I DS
(mA)
Chip Type
Frequency Band
FLC087XP
28.5
7.0
31.5
8.0
10
180
XP
C
FLC157XP
31.5
6.0
29.5
8.0
10
360
XP
FLC307XP
34.8
9.5
37.0
4.0
10
720
XP
FSX017X
21.5
11.0
42.0
8.0
8
38
X
X
FSX027X
24.5
10.0
41.0
8.0
8
77
X
FLX257XV
33.5
7.5
31.0
10.0
10
600
XV
FLK017XP
20.5
8.0
26.0
14.5
10
36
XP
Ku
FLK027XV *
24.0
7.0
32.0
14.5
10
60
XP/XV
FLK057XV
27.0
7.0
32.0
14.5
10
120
XV
FLK107XV
30.0
6.5
31.0
14.5
10
240
XV
FLK207XV
32.5
6.0
27.0
14.5
10
480
XV
X Conventional
XP Plated Heat Sink
XV Via Hole PHS
 
* : XP also available  
 
back to top
 
HEMT Chips for Low Noise Applications
Part Number
Noise Figure
NF (typ)
(dB)
Associated Gain
Gas (typ)
(dB)
frequency
f
(GHz)
Drain Source Voltage
V DS
(V)
Drain Source Current
I DS
(mA)
Frequency Band
FHX04X
0.75
10.5
12.0
2
10
X/Ku
FHX05X
0.9
10.5
12.0
2
10
FHX06X
1.10
10.5
12.0
2
10
FHX13X
0.45
13.0
12.0
2
10
FHX14X
0.55
13.0
12.0
2
10
FHX35X
1.20
10.0
12.0
3
10
FHX45X
0.55
12.0
12.0
2
10
FHR02X
1.0
9.0
18.0
2
10
K
FHR20X
0.75
10.0
18.0
2
5
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Super Low Noise Packaged HEMTs
Super Low Noise Packaged HEMT (High Electron Mobility Transistor)
Part Number
Noise Figure
NF (typ)
(dB)
Associated Gain
Gas (typ)
(dB)
frequency
f
(GHz)
Drain Source Voltage
V DS
(V)
Drain Source Current
I DS
(mA)
Package Type
Frequency Band
FHC40LG
0.30
15.5
4.0
2
10
LG
C
FHX13LG
0.45
13.0
12.0
2
10
LG
X/Ku
FHX14LG
0.55
13.0
12.0
2
10
LG
FHX04LG
0.75
10.5
12.0
2
10
LG
FHX05LG
0.90
10.5
12.0
2
10
LG
FHX06LG
1.10
10.5
12.0
2
10
LG
FHX35LG
1.20
10.0
12.0
3
10
LG
Tc(op) = +25C, All measurement values are shown as standard values
Note: FSU01LG, FSU02LG, and FSX017LG devices are short lead.
back to top
Discrete GaAs FETs
General Purpose GaAs FET
Part Number
Test Condition1
Output power at
1dB G.C.P
P 1dB
(dBm)
Power Gain at
1dB G.C.P
G 1dB
(dB)
Test Condition2
Noise Figure
NF
Condition2
Associated Gain
Gas
Condition2
Package
Application
FSU01LG
f=2GHz
V DS =6V
I DS =40mA
20
19
f=2GHz
V DS =3V
I DS =10mA
0.55
18.5
LG
Medium Power Amplifier
FSU02LG
f=2GHz
V DS =6V
I DS =80mA
23
17
f=2GHz
V DS =3V
I DS =20mA
1.5
17.5
LG
FSX027WF
f=8GHz
V DS =8V
I DS =77mA
24.5
10
-
-
-
WF
FSX017WF
f=8GHz
V DS =8V
I DS =39mA
21.5
11
-
-
-
WF
FSX56LP
f=10GHz
V DS =3V
I DS =30mA
15
6
-
-
-
LP
BS Oscillator
FSX017LG
f=12GHz
V DS =4V
I DS =30mA
16
8
-
-
-
LG
Medium Power Amplifier
*1: Internally matched type; *2: Push-pull FET type; *3: Pout; *4: GL (small signal gain); *5: I DS (DC)
Note: Tc = +25C. All measurement values are shown as standard values.
back to top
L-band GaAs-FET for Mobile Communication System
Part number
Band

Output Power at 1dB
G.C.P
P 1dB

Power Gain at 1dB
G.C.P
G 1dB
Power Added Efficiency
η add
(%)
frequency
f
(GHz)
Drain-Source Voltage
V DS
(V)
Drain Current
I DS
(mA)

Thermal Resistance
(癈/W)

package
type
Feature.
Application
FLU10XM
L
29.5
13.5
47
2
10
180
25
XM
High gain, surface mount package
FLU17XM
32.5
12.5
46
2
360
15
FLU35XM
35.5
11.5
46
2
720
7.5
FLL107ME
29.5
13.5
47
2.3
180
25
ME
High gain
High Output Amplifier
FLL177ME
32.5
12.5
46
2.3
360
15
FLL357ME
33.5
11.5
46
2.3
720
7.5
FLL57MK
36
11.5
37
2.3
990
6.2
MK
FLL120MK
40
10.0
40
2.3
2200
3.3
FLL200IB-1 *1
42.5
13.0
35
1.5
4800
1.6
IB
FLL200IB-2 *1
42.5
11.0
34
2.3
4800
1.6
FLL200IB-3 *1
42.5
11.0
34
2.6
4800
1.6
FLL300IL-1
44.5
13.0
45
0.9
6000
1.0
IL
FLL300IL-2
44.5
12.0
44
1.8
6000
1.0
FLL300IL-3
44.5
10.0
42
2.6
6000
1.0
FLL300IP-4 *2
44.5
8.0
40
3.6
6000 *5
1.0
IP
Push-pull type.
High gain, high output amplifier
FLL310IQ-3A *2
45.0
9.0
40
2.7
7000
1.0
IQ
FLL400IP-2 *2
45.5
10.0
44
1.96
12
2000 *5
1.0
IP
FLL400IP-3 *2
45.5
9.0
43
2.5
2000 *5
1.0
FLL600IQ-2 *2
48
10.5
43
1.96
4000 *5
0.8
IQ
FLL600IQ-2C *2
48.0 *3
12.0 *4
51
2.17
1500 *5
0.8
FLL600IQ-3 *2
48.0
10.0
43
2.7
4000 *5
0.8
FLL800IQ-2C *2
49.0 *3
11.0 *4
50
2.17
2000 *5
0.8
FLL810IQ-3C *2
49.0 *3
12.0 *4
50
2.6
5000
0.8
FLL810IQ-4C *2
49.0 *3
9.5 *4
45
3.6
5000
0.8
FLL1200IU-2 *2
50.8 *3
11.0 *4
44
1.96
5000
0.6
IU
FLL1200IU-3 *2
50.8 *3
11.0 *4
44
2.5
5000
0.6
FLL1500IU-2C *2
51.8 *3
12.0 *4
48
2.17
4000 *5
0.55
FLL2400IU-2C *2
53.8 *3
11.5 *4
-
2.17
6000 *5
0.45
*1 : Input Matched
back to top
General Purpose Power GaAs-FET
Part Number
Output Power at 1dB G.C.P
P 1dB (typ)
(dBm)
Power Gain at 1dB G.C.P
G 1dB (typ)
(dB)
Power-added Efficiency
η add (typ)
(%)
frequency
f
(GHz)
Drain Source Voltage
V DS
(V)
Drain Source Current
I DS
(mA)
Thermal Resistance
R th (typ)
(癈/W)
Package Type
Frequency Band
FLC057WG
27.0
9.0
38.0
8.0
10
120
27
WG
C
FLC097WF
28.8
8.5
35.0
6.0
10
180
25
WF
FLC107WG
30.0
8.0
36.0
8.0
10
240
16
WG
FLC167WF
31.8
7.5
35.0
6.0
10
360
15
WF
FLC257MH-6 *1
34.0
9.0
36.0
6.4
10
600
8
MH
FLC257MH-8 *1
34.0
8.0
35.0
8.5
10
600
8
MH
FLC317MG-4 *1
34.8
9.5
37.0
4.2
10
720
8
MG
FLX107MH-12 *1
30.0
7.5
33.0
12.5
10
240
15
MH
X
FLX207MH-12 *1
32.5
7.0
28.0
12.5
10
480
10
MH
FLK017WF
20.5
7.5
26.0
14.5
10
36
65
WF
Ku
FLK027WG
24.0
7.0
32.0
14.5
10
60
40
WG
FLK057WG
27.0
7.0
32.0
14.5
10
120
20
WG
FLK107MH-14 *1
30.0
6.5
31.0
14.5
10
240
15
MH
FLK207MH-14 *1
32.5
6.0
27.0
14.5
10
480
10
MH
back to top
Low Distortion Internally Matched GaAs-FET Characteristics
Part Number
Band
3rd Order Inter-modulation Distortion
IM3
(dBc)
Output Power at 1dB G.C.P
P 1dB
(dBm)
Power Gain at 1dB G.C.P
G 1dB
(dB)
Power added Efficiency
Frequency
f
(GHz)
Drain-Source Voltage
V DS (V)
Drain Current
I DS (mA)
Thermal Resistance
(癈/W)
Package
Special Application
FLM3135-4F
FLM3135-8F
FLM3135-12F
FLM3135-18F
S
-45
-45
-45
-45
36.5
39.5
41.5
43
12
11
11.5
10.5
38
37
40
37
3.1~3.5
3.1~3.5
3.1~3.5
3.1~3.5
10
1100
2200
3400
4800
5
3
2.3
1.6
IB
IB
IK
IK
High output amplifier

Impedance matched = 50Ω

External circuit not required

Each is designed for standard communication frequency band
FLM3439-4F
FLM3439-8F
FLM3439-12F
FLM3439-18F
FLM3439-25F
-46
-46
-46
-46
-46
36.5
39.5
41.5
43
44.5
12
11
11.5
10.5
10.5
38
37
40
37
41
3.4~3.9
3.4~3.9
3.4~3.9
3.4~3.9
3.4~3.9
1100
2200
3400
4800
6800
5
3
2.3
1.6
1.4
IB
IB
IK
IK
IK
FLM3742-4F
FLM3742-8F
FLM3742-12F
FLM3742-18F
FLM3742-25F
C
-46
-46
-46
-46
-46
36.5
39.5
41.5
43
44.5
12
11
11.5
10.5
10.5
38
37
40
37
41
3.7~4.2
3.7~4.2
3.7~4.2
3.7~4.2
3.7~4.2
1100
2200
3250
4800
6200
5
3
2.3
1.6
1.4
IB
IB
IK
IK
IK
FLM4450-4F
FLM4450-8F
FLM4450-12F
FLM4450-18F
FLM4450-25F
-46
-46
-46
-46
-46
36.5
39.5
41.5
43
44.5
11
10
10.5
9.5
9.5
37
36
39
36
40
4.4~5.0
4.4~5.0
4.4~5.0
4.4~5.0
4.4~5.0
1100
2200
3250
4800
6200
5
3
2.3
1.6
1.4
IB
IB
IK
IK
IK
FLM5359-4F
FLM5359-8F
FLM5359-12F
FLM5359-18F
FLM5359-25F
-46
-46
-46
-46
-46
36.5
39.5
41.5
43
44.5
10.5
9.5
9.5
8.5
8.5
37
36
38
35
39
5.3~5.9
5.3~5.9
5.3~5.9
5.3~5.9
5.3~5.9
1100
2200
3250
4800
6200
5
3
2.3
1.6
1.4
IB
IB
IK
IK
IK
FLM5964-4F
FLM5964-6F
FLM5964-8F
FLM5964-12F
FLM5964-18F
FLM5964-25F
-46
-46
-46
-46
-46
-46
36.5
38.5
39.5
41.5
43
44.5
10
10
10
10
10
10
37
37
37
37
37
37
5.9~6.4
5.9~6.4
5.9~6.4
5.9~6.4
5.9~6.4
5.9~6.4
1100
1625
2200
3250
4875
6500
5
4
3
2.3
1.6
1.4
IB
IB
IB
IK
IK
IK
FLM5972-8F
-45
39.0
8.5
31
5.9~7.2
2200
3.0
IB
FLM6472-4F
FLM6472-6F
FLM6472-8F
FLM6472-12F
FLM6472-18F
FLM6472-25F
-46
-46
-46
-46
-46
-46
36.5
38.5
39.5
41.5
43
44.5
9.5
9.5
9.5
9.5
9.5
9.5
36
37
36
37
37
38
6.4~7.2
6.4~7.2
6.4~7.2
6.4~7.2
6.4~7.2
6.4~7.2
1100
1625
2200
3250
4875
6500
5
4
3
2.3
1.6
1.4
IB
IB
IB
IK
IK
IK
FLM7179-4F
FLM7179-6F
FLM7179-8F
FLM7179-12F
FLM7179-18F
-46
-46
-46
-46
-46
36.5
38.5
39.5
41.5
42.5
9
9
9
9
8
35
34
35
38
30
7.1~7.9
7.1~7.9
7.1~7.9
7.1~7.9
7.1~7.9
1100
1625
2200
3250
4875
5
4
3
2.3
1.6
IB
IB
IB
IK
IK
FLM7185-6F
FLM7185-12F
-45
-45
38.0
41.0
8
8
30
30
7.1~8.5
7.1~8.5
1625
3500
4
2.3
IB
IK
FLM7785-4F
FLM7785-6F
FLM7785-8F
FLM7785-12F
-46
-46
-46
-46
36.5
38.5
39.5
41.5
8.5
8.5
8.5
8.5
35
31
34
34
7.7~8.5
7.7~8.5
7.7~8.5
7.7~8.5
1100
1755
2200
3500
5
4
3
2.3
IB
IB
IB
IK
FLM8596-4F
FLM8596-8F
FLM8596-12F
X,
Ku
-45
-45
-45
36.5
39.0
40.5
7.5
7.5
7.5
29
29
25
8.5~9.6
8.5~9.6
8.5~9.6
1100
2200
3600
5
3
2.3
IA
IB
IB
FLM0910-3F
FLM0910-4F
FLM0910-8F
-46
-46
-46
35
36
39
7.5
7.5
7.5
29
29
29
9.5~10.5
9.5~10.5
9.5~10.5
900
1100
2200
5
5
3
IA
IA
IB
FLM1011-3F
FLM1011-4F
FLM1011-6F
FLM1011-8F
FLM1011-12F
-46
-46
-45
-46
-45
35
36
37.5
39
40.5
7.5
7
7.5
7
6
29
29
28
29
25
10.7~11.7
10.7~11.7
10.7~11.7
10.7~11.7
10.7~11.7
900
1100
1800
2200
3600
5
5
4
3
2.3
IA
IA
IA
IB
IB
FLM1213-4F
FLM1213-6F
FLM1213-8F
FLM1213-12F
-46
-45
-46
-45
36
37.5
39
40.5
6.5
7
6.5
5.5
28
27
28
24
12.7~13.2
12.7~13.2
12.7~13.2
12.7~13.2
1100
1800
2200
3600
5
4
3
2.3
IA
IA
IA
IB
FLM1314-3F
FLM1314-6F
-45
-45
35
37.5
5.5
5.5
25
22
13.75~14.5
13.75~14.5
900
1800
5
4
IA
IA
FLM1414-3F
FLM1414-4F
FLM1414-6F
FLM1414-8F
FLM1414-12F
-46
-46
-46
-46
-
35
36
37.5
39
40.5
6.5
6
6.5
6
5
27
27
24
27
23
14.0~14.5
14.0~14.5
14.0~14.5
14.0~14.5
14.0~14.5
900
1100
1800
2200
3600
5
5
4
3
2.3
IA
IA
IA
IA
IB
FLM1415-3F
FLM1415-6F
-45
-45
34.5
37
5.5
5.5
23
20
14.5~15.3
14.5~15.3
900
1800
5
4
IA
IA
Note: Tc= +25C. All measurement values are shown as standard values.
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Driver Amplifier MMIC for Mobile Communication
Part Number
frequecy
f
GHz
Output power at 1dB G.C.P
P 1dB
dBm (typ.)
small signal gain
G
dB
Gain Flatness
ΔG
dB (typ.)
DC Input Current
I DD / I GG
mA
Feature
FMM5027VJ
0.8~3.0
26
19
2
220/2
broad band, high output
FMM5046VF
2.2
36
30
-
1700/35
high output
FMM5049VT
2.2
41 *1
33
-
2500/7
high output
Note *1 : Pout;
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Power Amplifier MMIC for 14GHz Band VSAT
Part Number
frequecy
f
GHz
Output power at 1dB G.C.P
P 1dB
dBm (typ.)
Linear Gain
G
dB (typ.)
Gain Flatness
ΔG
dB (typ.)
FMM5010VF
14.0~14.5
21
25
1.0
FMM5017VF
14.0~14.5
29
20
1.0
FMM5007VF
14.0~14.5
31
20
1.0
FMM5522GJ
14.0~14.5
35
26 *1
2.0 *3
FMM5051VF
13.75~14.5
31.5 *2
31.5
1.5
FMM5048GJ
13.75~14.5
36
26 *1
3.0 *3
*1 : G1dB;   *2 : Pout (Pin=3dBm);   *3 : Maximum;
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Quasi Millimeter-Wave MMIC
Power Amplifier MMIC for VSAT Characteristics
Type
Frequency Range
(GHz)
 
Drain Voltage
V DD (V)
Output Power at 1dB G.C.P
P1dB (dBm)
Power Gain at 1dB G.C.P
G1dB (dB)
Power Added Efficiency
η add (%)
FMM5802X
27.5~31.5
6
25.5
9
20
FMM5803X
27.5~30.0
30 *2
14
20 *2
30.0~31.5
12
FMM5804X
17.5~30.0
25
18
18
30.0~31.5
23
FMM5805X
17.5~20.0
31
21
30
FMM5806X
24.0~27.0
26
9.5
25
FMM5807X
21.0~24.0
29
14 *1
20 *1
24.0~27.0
30
FMM5815X
17.5~20.0
31
21
30 *3
FMM5816X
37.0~42.0
25
14
20
*1: f=21.0~24.0GHz (typ.),  *2: f=27.5~31.5GHz (typ.),  *3: ηadd at P1dB
(All characteristic are typical value)
 
Quasi Millimeter-wave Power Amplifier (Package) Characteristics
Type
Frequency Range
(GHz)
 
Drain Voltage
V DD (V)
Output Power at 1dB G.C.P
P1dB (dBm)
Power Gain at 1dB G.C.P
G1dB (dB)
Power Added Efficiency
η add (%)
FMM5805GJ-1
17.7~19.7
6
31
20
27
FMM5807GJ-1
21.2~23.6
29
13
18
FMM5815GJ-1
17.7~19.7
31
20
25
FMM5811GJ-1
17.7~23.6
24.5
15
20
FMM5815GJ-1
17.7~19.7
31
20
25
 
Quasi Millimeter-wave Low Noise Amplifier Characteristics
Type
Frequency Range
(GHz)
Drain Voltage
VDD (V)
Noise Figure
NF (dB)
Associated Gain
Gas (dB)
Chip Size
(mm)
FMM5701X
18~28
5
1.5 *1
13.5 *1
0.45 x 0.52
FMM5702X
27~32
4
1.6 *2
13 *2
0.96 x 0.96
FMM5703X
24~32
3
2 *3
18 *3
1.56 x 1.16
FMM5704X
36~40
3
2 *4
18 *4
1.46 x 1.06
 
K~Ka Band Converter MMIC (Chip) Characteristics
Type
Usable Frequency Range
(GHz)
Conversion Gain
(dB)
Associated Current
(mA)
Features
FMM5116X
20~32
-8
140
Built-in frequency multiplier
(times 2)
FMM5117X
-10
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MMIC for DBS (Direct Broadcast Satellite)
Down Converter MMIC for DBS
FMM5107ML
 
FMM5107MLT4E1
Single Oscillator MMIC for DBS
FMM5202ML
Dual Oscillator MMIC for DBS
FMM5201ML
 
FMM5201MLT4E1 
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GaAs Microwave Frequency Divider (Prescalar) IC
Part Number
Power Supply
Current (typ.)
I SS (mA)
Operating Frequency Range
f
(GHz)
Supply Voltage
V DD (typ.)
(V)
Power Output
Po (typ.)
(dBm)
Ambient Temp. Range
(癈)
Package
FMM1061VJ *
120
2~6
5
4
-30 ~ +70
VJ
FMM1062ML *
20
2~6
3
-4
-40 ~ +85
ML
FMM106HG
140
2~6.5
5
4
-55 ~ +85
HG
FMM1103VJ *
90
2~12
5
8
-40 ~ +85
VJ
Note * : Part are available in Tape and Reel.

 

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