 |
|
|
|
|
特殊光探测器
特殊光探测器构名思义是指具有特殊功能的光电探测器，包括封装规格的特殊性、探测波长的特殊性以及输出状态的特殊性等。主要用于高要求、高精密度的探测仪器。
|
产品名称 |
产品型号 |
封装 |
品牌 |
PDF名称 |
|
位敏探测器 |
SD-112F2 |
DIP-6 |
KODENSHI |
 |
|
可见光照度传感器 |
PO188 |
SMD-2 |
ON |
|
|
位敏探测器 |
PD3122F |
DIP-6 |
SHARP |
|
|
位敏探测器 |
PD3131 |
DIP-6 |
SHARP |
|
光电二极管模块
供应 光电二极管模块，目的在于简化 光电二极管的使用。该系列光电二极管模块，配套用于雪崩二极管、四象限探测器、位敏探测器，特别适合于系统集成和科学研究。
不带电路板（集成放大电路） 雪崩二极管( APD)
|
Type
|
Transimpedance/Ohm
|
Bandwidth/MHz
|
|
Chip
|
Package
|
|
Series 8 (for
800nm)
|
|
AD230-8
|
TO5
|
2750
|
2000
|
|
AD230-8
|
TO52
|
2750
|
2000
|
|
AD500-8
|
TO5
|
2750
|
1000
|
|
AD500-8
|
TO52
|
2750
|
1300
|
|
Series 9 (for
900nm)
|
|
AD500-9-8015
|
TO52
|
2750
|
500
|
|
16AA0.13-9
|
Ceramic
|
10k
|
500
|
|
AD230-9
|
TO5
|
2750
|
600
|
|
AD500-9
|
TO5
|
2750
|
500
|
|
Series 10 (for
1064nm)
|
|
AD800-10
|
TO8S
|
10k
|
65
|
带电路板（集成放大电路和温度补偿功能）雪崩二极管(APD)和雪崩二极管阵列(APD
Array)
|
Chip
|
Type
|
|
AD1100-8
|
USB-module
APD-eval-kit
|
|
25AA0.04-9
|
125 MHz LIDAR
APD-array-eval-kit
|
|
64AA0.04-9
|
125 MHz LIDAR
APD-array-eval-kit
|
带电路板（集成放大电路） 位敏探测器( PSD)、 四象限探测器( QP)、 波长敏感探测器( WS)
|
Chip
|
Type
|
Package
|
|
QP45-Q
|
Quadrant PD
|
HVSD
|
|
QP50-6
|
Quadrant PD
|
SD2
|
|
QP50-6
|
Quadrant PD
|
SD2-DIAG
|
|
QP50-6 (18µm)
|
Quadrant PD
|
SD2
|
|
QP50-6 (18µm)
|
Quadrant PD
|
SD2-DIAG
|
|
QP154-Q
|
Quadrant PD
|
HVSD
|
|
DL16-7
|
PSD
|
PCBA3
|
|
DL100-7
|
PSD
|
PCBA3
|
|
DL400-7
|
PSD
|
PCBA
|
|
WS7.56
|
Wavelength
sensitive PD
|
PCBA2
|
|
X100-7 with
Scintillator
|
Gamma pulse
counter
|
Shielded module
|
高压电源模块
|
Max.Voltage/V
|
Ripple/mV
|
Description
|
Feature
|
|
-500
|
7.5
|
High
performance HV source
|
Ultra low
ripple
|
|
+500
|
7.5
|
High
performance HV source
|
Ultra low
ripple
|
|
+200
|
7.5
|
High
performance HV source
|
Ultra low
ripple
|
|
+200
|
<10
|
Compact HV
source
|
Small footprint
|
|
+60
|
<10
|
PIN-photodiode
HV source
|
Very small
footprint
|
|
光电倍增管
供应 光电倍增管，基于KETEK技术，专注于微弱光的检测。该系列 光电倍增管具有如下特点：单光子计数、灵敏度高、信噪比高、效应速度快、温度影响小、结构紧凑，广泛应用于：化学分析、医疗诊断、科学研究、工业集成。
|
Chip
Package
|
Active Area(mm²)
|
Pixel
Size(µm)
|
Pixel
number
|
Trench Technology
|
Geometrical efficiency(%)
|
Dark
rate(kHz/mm²)
|
PDE(%)
|
Gain
at 20% OV
|
Cross
talk(%)
|
|
THD
|
1.2×1.2
|
50×50
|
576
|
No
|
70
|
500
|
50
|
2 E6
|
35
|
|
THD
|
3.0×3.0
|
50×50
|
3600
|
No
|
70
|
500
|
50
|
2 E6
|
35
|
|
THD
|
3.0×3.0
|
50×50
|
3600
|
Yes
|
63
|
300
|
40
|
2 E6
|
20
|
|
THD
|
6.0×6.0
|
60×60
|
10000
|
Yes
|
66
|
500
|
40
|
1 E7
|
25
|
|
光电二极管(PIN)
供应 光电二极管( PIN)，用于将光信号转换为电信号，形成光电效应/光电池。 pin光电二极管应用广泛，包括：
安检设备、激光测距、运动控制、分析仪器、生物医疗、光通信、军事、航空航天。
备注：如果采购数量10片以上，提供配套的驱动电路模块。
|
PIN Series
|
Special features
for Applications
|
|
Series-2 Optimized
for 200-500nm
|
UV/Blue enhanced
for analytical instruments, readout for
scintillators.
|
|
Series-6b Optimized
for 400-650nm
|
Blue/Green enhanced
for photometric illuminometer.
|
|
Series-5b Optimized
for 350-650nm
|
High-speed blue
enhanced for high speed photometry.
|
|
Series-5t Optimized
for 400-900nm
|
High-speed
red-enhanced for high speed photometry.
|
|
Series-5 Optimized
for 400-950nm
|
High-speed
NIR-enhanced for high speed photometry.
|
|
Series-6 Optimized
for 700-950nm
|
Low dark current,
fast response for precision photometry.
|
|
Series-7 Optimized
for 700-1100nm
|
Low capacity, full
depletable for high energy physics.
|
|
Series-Q Optimized
for 900-1100nm
|
Enhanced NIR
sensitivity for YAG laser detection.
|
|
Series-I for
600-1700nm
|
InGaAs, high IR
sensitivity, low dark current for Eye-sate laser
detection.
|
|
Series-X for
Ionizing radiation
|
With or without
scintillator, ultra for medical, security,
material.
|
|
Series 2: UV/Blue
sensitive photodiodes
|
|
Type No.
|
Active area
|
Dark current
|
Rise time
|
|
Chip
|
Package
|
Size
|
Area
|
5V
|
410nm 5V 50Ω
|
|
mm
|
mm2
|
nA
|
ns
|
|
PS1-2
|
TO52
|
1.0×1.0
|
1
|
0.01
|
50
|
|
PS1-2
|
LCC6.1
|
1.0×1.0
|
1
|
0.01
|
50
|
|
PC5-2
|
TO5
|
Ø2.52
|
5
|
0.3
|
150
|
|
PS7-2
|
TO5
|
2.66×2.66
|
7
|
0.4
|
200
|
|
PC10-2
in
Stock
|
TO5
|
Ø3.57
|
10
|
1
|
300
|
|
PS13-2
|
TO5
|
3.5×3.5
|
13
|
1
|
300
|
|
PS33-2
|
TO8
|
5.7×5.7
|
33
|
2
|
600
|
|
PC50-2
|
BNC
|
Ø7.98
|
50
|
5
|
1000
|
|
PS100-2
|
BNC
|
10×10
|
100
|
10
|
2000
|
|
PS100-2
|
CERpin
|
10×10
|
100
|
10
|
2000
|
|
Band pass filter
modules: PC10-2 TO5i with center wavelength
254nm, 300nm, 350nm
|
|
Series 6b:
Blue/Green sensitive photodiodes
|
|
Type No.
|
Active area
|
Dark current
|
Rise time
|
|
Chip
|
Package
|
Size
|
Area
|
5V
|
410nm 5V 50Ω
|
|
mm
|
mm2
|
nA
|
ns
|
|
PS1-6b
in Stock
|
TO52S1
|
1×1
|
1
|
0.05
|
10
|
|
PS1-6b
|
LCC6.1
|
1×1
|
1
|
0.05
|
10
|
|
PC5-6b
|
TO5
|
Ø2.52
|
5
|
0.1
|
20
|
|
PS7-6b
|
TO5
|
2.7×2.7
|
7
|
0.15
|
25
|
|
PC10-6b
|
TO5
|
Ø3.57
|
10
|
0.2
|
45
|
|
PS13-6b
|
TO5
|
3.5×3.5
|
13
|
0.25
|
50
|
|
PS33-6b
|
TO8
|
5.7×5.7
|
33
|
0.6
|
140
|
|
PS100-6b
|
LCC10S
|
10×10
|
100
|
1
|
200
|
|
PS100-6b
|
CERpinE
|
10×10
|
100
|
1
|
200
|
|
PS100-6b
|
CERpinG
|
10×10
|
100
|
1
|
200
|
|
Band pass filter
modules: PR20-6b TO5i with center wavelength
488nm, 550nm, 633nm, 680nm
|
|
Series 5b: High
speed photodiodes (for blue-sensitive
photodiodes)
|
|
Type No.
|
Active area
|
Dark current
|
Rise time
|
|
Chip
|
Package
|
Size
|
Area
|
3.5V
|
405nm 3.5V 50Ω
|
|
mm
|
mm2
|
nA
|
ns
|
|
PS1.0-5b
|
TO52S1
|
1.0×1.0
|
1
|
0.01
|
1.3
|
|
PS1.0-5b
|
LCC6.1
|
1.0×1.0
|
1
|
0.01
|
1.3
|
|
PS7-5b
|
TO5
|
2.7×2.7
|
7
|
0.5
|
5
|
|
PC10-5b
|
TO5
|
Ø3.57
|
10
|
0.5
|
6
|
|
PS13-5b
|
TO5
|
3.5×3.5
|
13
|
1
|
6
|
|
Series 5t: High
speed photodiodes for low voltages (for low
operating voltages between 3 and 5 V, making
them ideal for VIS and NIR applications in
conjunction with CMOS components)
|
|
Type No.
|
Active area
|
Dark current
|
Rise time
|
|
Chip
|
Package
|
Size
|
Area
|
3.5V
|
850nm 3.5V 50Ω
|
|
mm
|
mm2
|
nA
|
ns
|
|
PS0.25-5t
|
LCC6.1
|
0.5×0.5
|
0.25
|
0.01
|
0.4
|
|
PS0.25-5t
|
SMD1206
|
0.5×0.5
|
0.25
|
0.01
|
0.4
|
|
PC0.55-5t
|
LCC6.1
|
Ø0.84
|
0.55
|
0.01
|
1
|
|
PC0.55-5t
|
T1 3/4
|
Ø0.84
|
0.55
|
0.01
|
1
|
|
PC0.55-5t
|
T1 3/4 black
|
Ø0.84
|
0.55
|
0.01
|
1
|
|
PS1-5t
|
LCC6.1
|
1.0×1.0
|
1
|
0.01
|
1
|
|
PS7-5t
|
TO5
|
2.7×2.7
|
7
|
0.5
|
1
|
|
Series 5: High
speed photodiodes (for fast rise times at low
reverse voltages)
|
|
Type No.
|
Active area
|
Dark current
|
Rise time
|
|
Chip
|
Package
|
Size
|
Area
|
20V
|
850nm 20V 50Ω
|
|
mm
|
mm2
|
nA
|
ns
|
|
PS0.25-5
|
TO52S1
|
0.5×0.5
|
0.25
|
0.1
|
0.4
|
|
PS0.25-5
in Stock
|
TO52S3
|
0.5×0.5
|
0.25
|
0.1
|
0.4
|
|
PS0.25-5
|
LCC6.1
|
0.5×0.5
|
0.25
|
0.1
|
0.4
|
|
PS0.25-5
|
SMD1206
|
0.5×0.5
|
0.25
|
0.1
|
0.4
|
|
PC0.55-5
|
TO52S1
|
Ø0.84
|
0.55
|
0.2
|
1
|
|
PC0.55-5
|
LCC6.1
|
Ø0.84
|
0.55
|
0.2
|
1
|
|
PS1.0-5
|
TO52S1
|
1.0×1.0
|
1
|
0.2
|
1.5
|
|
PS1.0-5
|
TO52S3
|
1.0×1.0
|
1
|
0.2
|
1.5
|
|
PS1.0-5
|
LCC6.1
|
1.0×1.0
|
1
|
0.2
|
1.5
|
|
PS7-5
|
TO5
|
2.7×2.7
|
7
|
0.5
|
2
|
|
PS11.9-5
|
TO5
|
3.45×3.45
|
11.9
|
1
|
3
|
|
PC20-5
|
TO8
|
Ø5.05
|
20
|
2
|
3.5
|
|
PS33-5
|
TO8
|
5.7×5.7
|
33
|
2
|
3.5
|
|
PS100-5
|
LCC10S
|
10×10
|
100
|
2
|
5
|
|
PS100-5
|
CERpinG
|
10×10
|
100
|
2
|
5
|
|
Series 6: IR
photodiodes with min. dark current (for
low-capacitance light detection as well as for
α, β, ϒ and X-radiation detection)
|
|
Type No.
|
Active area
|
Dark current
|
Rise time
|
|
Chip
|
Package
|
Size
|
Area
|
10V
|
850nm 10V 50Ω
|
|
mm
|
mm2
|
nA
|
ns
|
|
PC1-6
|
TO52S1
|
Ø1.13
|
1
|
0.05
|
10
|
|
PC1-6
|
TO52S3
|
Ø1.13
|
1
|
0.05
|
10
|
|
PC5-6
|
TO5
|
Ø2.52
|
5
|
0.1
|
13
|
|
PS7-6
|
TO5
|
2.66×2.66
|
7
|
0.1
|
15
|
|
PC10-6
|
TO5
|
Ø3.57
|
10
|
0.2
|
20
|
|
PS13-6
|
TO5
|
3.5×3.5
|
13
|
0.2
|
20
|
|
PC20-6
|
TO8
|
Ø5.05
|
20
|
0.3
|
25
|
|
PS33-6
|
TO8
|
5.7×5.7
|
33
|
0.4
|
25
|
|
PC50-6
|
TO8S
|
Ø7.98
|
50
|
0.5
|
30
|
|
PC100-6
|
BNC
|
Ø11.28
|
100
|
1
|
40
|
|
PS100-6
|
BNC
|
10×10
|
100
|
1
|
40
|
|
PS100-6
|
LCC10S
|
10×10
|
100
|
1
|
40
|
|
PS100-6
|
CERpinG
|
10×10
|
100
|
1
|
40
|
|
Series 7: IR
photodiodes with fully depletable (very low
capacitance levels)
|
|
Type No.
|
Active area
|
Dark current
|
Rise time
|
|
Chip
|
Package
|
Size
|
Area
|
10V
|
905nm 10V 50Ω
|
|
mm
|
mm2
|
nA
|
ns
|
|
PC5-7
|
TO8i
|
Ø2.52
|
5
|
0.05
|
45
|
|
PC10-7
|
TO8i
|
Ø3.57
|
10
|
0.1
|
50
|
|
PC20-7
|
TO8Si
|
Ø5.05
|
20
|
0.2
|
50
|
|
PS100-7
|
LCC10G
|
10×10
|
100
|
1.5
|
50
|
|
Series Q:
Photodiodes for 1064nm (specifically for laser
rangefinders, laser-based targeting systems or
any applications using YAG lasers or similar NIR
radiation sources)
|
|
Type No.
|
Active area
|
Dark current
|
Rise time
|
|
Chip
|
Package
|
Size
|
Area
|
150V
|
1064nm 150V 50Ω
|
|
mm
|
mm2
|
nA
|
ns
|
|
PC10-Q
|
TO8i
|
Ø3.57
|
10
|
0.5
|
14
|
|
PC20-Q
|
TO8Si
|
Ø5.05
|
20
|
1
|
14
|
|
PS100-Q
|
LCC10G
|
10×10
|
100
|
80
|
14
|
|
PC50-Q
|
TO8Si
|
Ø8
|
50
|
2.5
|
14
|
|
雪崩二极管(APD)
供应 雪崩二极管( APD)，是一种内部增益机制的光电二极管。根据具体应用，可以选择：蓝光增强型、红光增强型、红外增强型(900nm、1064nm)。 雪崩二极管广泛应用于：安检设备、激光测距、运动控制、分析仪器、生物医疗、光通信、军事、航空航天、光通讯。
备注：如果采购数量10片以上，提供配套的驱动电路模块。
|
PIN Series
|
Special
features for Applications
|
|
Series-11
Optimized for 360-560nm
|
Blue enhanced
for analytical instruments, readout for
scintillators.
|
|
Series-12
Optimized for 500-750nm
|
Flat frequency
response up to 3GHz for precise distance
meas., communication.
|
|
Series-8
Optimized for 750-820nm
|
High-speed for
resistance meas., laser scanner, high speed
applications.
|
|
Series-9
Optimized for 750-930nm
|
Low rise time
for laser rangefinder, LIDAR, basic
technology for arrays.
|
|
Series-10
Optimized for 860-1100nm
|
Sensitivity at
1064nm for range finder, laser tracker,
LIDAR.
|
|
Series 11: Blue
sensitivity enhanced (for biomedical
applications)
|
|
Type No.
|
Active area
|
Dark current
|
Rise time
|
|
Chip
|
Package
|
Size
|
Area
|
M=100
|
410nm 50Ω
|
|
mm
|
mm2
|
nA
|
ns
|
|
AD800-11
|
TO52S1
|
Ø0.8
|
0.5
|
1
|
1
|
|
AD1900-11
|
TO5i
|
Ø1.95
|
3
|
5
|
2
|
|
Series 12: Red
sensitivity enhanced (cut-off frequency up
to 3 GHz)
|
|
Type No.
|
Active area
|
Spectral
Responsivity
|
Cut-off
frequency
|
|
Chip
|
Package
|
Size
|
Area
|
660nm M=100
|
660nm 50Ω
|
|
mm
|
mm2
|
A/W
|
GHz
|
|
AD100-12
|
LCC6.1
|
Ø0.1
|
0.008
|
50
|
typ.3, min.2
|
|
AD100-12
|
LCC6.1f
|
Ø0.1
|
0.008
|
44
|
typ.3, min.2
|
|
AD100-12
|
TO52S1
|
Ø0.1
|
0.008
|
50
|
typ.3, min.2
|
|
AD230-12
|
LCC6.1
|
Ø0.23
|
0.042
|
50
|
typ.3, min.2
|
|
AD230-12
|
LCC6.1f
|
Ø0.23
|
0.042
|
44
|
typ.3, min.2
|
|
AD230-12
in Stock
|
TO52S1
|
Ø0.23
|
0.042
|
50
|
typ.3, min.2
|
|
AD500-12
|
LCC6.1
|
Ø0.5
|
0.196
|
50
|
typ.3, min.2
|
|
AD500-12
|
LCC6.1f
|
Ø0.5
|
0.196
|
44
|
typ.3, min.2
|
|
AD500-12
|
TO52S1
|
Ø0.5
|
0.196
|
50
|
typ.3, min.2
|
|
Series 8:
Optimized for high cut-off frequencies-850
nm (optimized for high speeds)
|
|
Type No.
|
Active area
|
Dark current
|
Rise time
|
|
Chip
|
Package
|
Size
|
Area
|
M=100
|
M=100 20V 50Ω
|
|
mm
|
mm2
|
nA
|
ns
|
|
AD100-8
|
LCC6.1
|
Ø0.1
|
0.008
|
0.05
|
<0.18
|
|
AD100-8
|
LCC6.1f
|
Ø0.1
|
0.008
|
0.05
|
<0.18
|
|
AD100-8
|
TO52S1
|
Ø0.1
|
0.008
|
0.05
|
<0.18
|
|
AD100-8
|
TO52S3
|
Ø0.1
|
0.008
|
0.05
|
<0.18
|
|
AD230-8
|
LCC6.1
|
Ø0.23
|
0.04
|
0.3
|
0.18
|
|
AD230-8
|
LCC6.1f
|
Ø0.23
|
0.04
|
0.3
|
0.18
|
|
AD230-8
|
TO52S1
|
Ø0.23
|
0.04
|
0.3
|
0.18
|
|
AD230-8
|
TO52S3
|
Ø0.23
|
0.04
|
0.3
|
0.18
|
|
AD500-8
|
LCC6.1
|
Ø0.5
|
0.2
|
0.5
|
0.35
|
|
AD500-8
|
LCC6.1f
|
Ø0.5
|
0.2
|
0.5
|
0.35
|
|
AD500-8
|
TO52S1
|
Ø0.5
|
0.2
|
0.5
|
0.35
|
|
AD500-8
|
TO52S2
|
Ø0.5
|
0.2
|
0.5
|
0.35
|
|
AD500-8
|
TO52S3
|
Ø0.5
|
0.2
|
0.5
|
0.35
|
|
AD800-8
|
TO52S1
|
Ø0.8
|
0.5
|
2
|
0.7
|
|
AD1100-8
|
TO52S1
|
Ø1.13
|
1
|
4-6
|
1
|
|
AD1900-8
|
TO5i
|
Ø1.95
|
3
|
15
|
1.4
|
|
AD3000-8
|
TO5i
|
Ø3
|
7.07
|
30
|
2
|
|
AD5000-8
|
TO8i
|
Ø5
|
19.63
|
60
|
3
|
|
AD230-8-2.3G
|
TO5
|
AD230-8-2.3G
TO5 is a high frequency optical data
receiver comprising an Avalanche Silicon
Photodiode and a transimpedance amplifier in
a hermetically sealed TO5 package.
|
|
AD500-8-1.3G
|
TO5
|
AD500-8-1.3G
TO5 is a high frequency optical data
receiver comprising an Avalanche Silicon
Photodiode and a transimpedance amplifier in
a hermetically sealed TO5 package.
|
|
Series 9: NIR
sensitivity enhanced-900nm (specifically for
LIDAR and laser rangefinders)
|
|
Type No.
|
Active area
|
Dark current
|
Rise time
|
|
Chip
|
Package
|
Size
|
Area
|
M=100
|
M=100
|
|
mm
|
mm2
|
nA
|
ns
|
|
AD230-9
|
LCC6.1
|
Ø0.23
|
0.04
|
0.5
|
0.5
|
|
AD230-9
|
LCC6.1f
|
Ø0.23
|
0.04
|
0.5
|
0.5
|
|
AD230-9
|
TO52S1
|
Ø0.23
|
0.04
|
0.5
|
0.5
|
|
AD230-9
|
TO52S1F2
|
Ø0.23
|
0.04
|
0.5
|
0.5
|
|
AD230-9
|
TO52S3
|
Ø0.23
|
0.04
|
0.5
|
0.5
|
|
AD500-9
|
LCC6.1
|
Ø0.5
|
0.2
|
0.8
|
0.55
|
|
AD500-9
|
LCC6.1f
|
Ø0.5
|
0.2
|
0.8
|
0.55
|
|
AD500-9
|
TO52S1
|
Ø0.5
|
0.2
|
0.8
|
0.55
|
|
AD500-9
|
TO52S1F2
|
Ø0.5
|
0.2
|
0.8
|
0.55
|
|
AD500-9
|
TO52S2
|
Ø0.5
|
0.2
|
0.8
|
0.55
|
|
AD500-9
|
TO52S3
|
Ø0.5
|
0.2
|
0.8
|
0.55
|
|
AD800-9
|
TO52S1
|
Ø0.8
|
0.5
|
2
|
0.9
|
|
AD1100-9
|
TO52S1
|
Ø1.13
|
1
|
4
|
1.3
|
|
AD1500-9
|
TO5i
|
Ø1.5
|
1.77
|
2
|
2
|
|
AD3000-9
|
TO5i
|
Ø3
|
7.07
|
30
|
2
|
|
AD5000-9
|
TO8i
|
Ø5
|
19.63
|
60
|
3
|
|
AD230-9-400M
|
TO5
|
AD230-9-400M-TO5 is a high frequency optical
data receiver comprising an Avalanche
Silicon Photodiode and a transimpedance
amplifier in a hermetically sealed TO-5
package.
|
|
AD500-9-400M
|
TO5
|
AD500-9-400M-TO5 is a high frequency optical
data receiver comprising an Avalanche
Silicon Photodiode and a transimpedance
amplifier in a hermetically sealed TO-5
package.
|
|
Multi-Element
Array
|
|
8AA0.4-9
|
SOJ22GL
|
APD Array 8
Elements, QE>80% at 760-910nm with NTC
|
|
16AA0.13-9
|
SOJ22GL
|
APD Array 16
Elements, QE>80% at 760-910nm with NTC
|
|
16AA0.13-9
|
DIL18
|
APD Array 16
Elements, QE>80% at 760-910nm
|
|
16AA0.4-9
|
SOJ22GL
|
APD Array 16
Elements, QE>80% at 760-910nm
|
|
25AA0.04-9
|
BGA
|
APD Array 25
(5×5) elements, QE>80% at 760-910nm with PTC
|
|
25AA0.16-9
|
BGA
|
APD Array 25
(5×5) elements, QE>80% at 760-910nm with PTC
|
|
64AA0.04-9
|
BGA
|
APD Array 64
(8×8) elements, QE>80% at 760-910nm with PTC
|
|
Series 10: NIR
sensitivity enhanced - 1064nm (specifically
for laser rangefinders, targeting systems or
any applications using YAG lasers or similar
NIR radiation sources)
|
|
Type No.
|
Active area
|
Dark current
|
Rise time
|
|
Chip
|
Package
|
Size
|
Area
|
M=100
|
M=100 1064nm
50Ω
|
|
mm
|
mm2
|
nA
|
ns
|
|
AD500-10
in Stock
|
TO5i
|
Ø0.5
|
0.2
|
1.5
|
4
|
|
AD800-10
|
TO5i
|
Ø0.8
|
0.5
|
3
|
5
|
|
AD1500-10
|
TO5i
|
Ø1.5
|
1.77
|
7
|
5
|
|
AD4000-10
|
TO8Si
|
Ø4
|
12.56
|
50
|
6
|
|
AD800-10
|
TO8Si
|
High speed,
high gain, low noise, low power consumption
hybrid (AD800-10+TIA)
|
|
Multi-Element
Array
|
|
QA4000-10
|
TO8Si
|
Quadrant
Avalanche Photodiode, High QE at 850-1070nm
|
|
|
 |
|
传感器/变送器/仪表按厂商品牌选用指南
红外光电系列
光电开关/光电传感器