UV PHOTODIODES
Silicon Carbide UV Photodiodes
UV-photodiodes based on SiC (Silicon Carbide) provide the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise.
These SiC detectors can be permanently operated at up to 170°C
SIC01D | Spectral range | Peak WL | Active Area | Package | Note | Data sheet |
SIC01D-18 | 215 - 365 nm | 285 nm | 0.5 mm² | TO-18 | UV broadband | / |
SIC01D-A18 | 310 - 370 nm | 335 nm | 0.5 mm² | TO-18 | UVA | / |
SIC01D-B18 | 230 - 315 nm | 280 nm | 0.5 mm² | TO-18 | UVB | / |
SIC01D-C18 | 230 - 285 nm | 270 nm | 0.5 mm² | TO-18 | UVC | / |
SIC01D-E18 | UVI | / | 0.5 mm² | TO-18 | DIN5050/CIE087 UV-Index measurement (Erythem) | / |
SIC01XL | Spectral range | Peak WL | Active Area | Package | Note | Data sheet | |||||||||||||||||||||||||||||||||||
SIC01XL-5 | 220 - 360 nm | 280 nm | 4.0 mm² | TO-5 | UV broadband |
SIC01XL-5ISO90 |
220 - 360 nm |
280 nm |
4.0 mm² |
TO-5 |
UV broadband, 2 isolated pins, 1
ground pin |
/ |
SIC01XL-A5 |
310 - 370 nm |
335 nm |
4.0 mm² |
TO-5 |
UVA only sensivity |
/ |
SIC01XL-B5 |
230 - 315 nm |
280 nm |
4.0 mm² |
TO-5 |
UVB only sensivity |
/ |
SIC01XL-C5 |
230 - 285 nm |
270 nm |
4.0 mm² |
TO-5 |
UVC only sensivity |
/ |
SIC01XL-E5 |
UVI |
/ |
4.0 mm² |
TO-5 |
DIN5050/CIE087 UV-Index
measurement (Erythem) |
/ |
|
Silicon Carbide UV Photodiodes - multi chip array
UV photodiode array based on 4 parallel SiC detector chips for ultra low level UV radiation sensitivity
Spectral range | Peak WL | Chip size | Package | Note | Data sheet | |
SIC01L4-5 | 210 - 380 nm | 280 nm | 3.84 mm² | TO-5 | Id 20 fA, 800 pF | / |
SIC01L4-C5C | 230 - 285 nm | 270 nm | 3.84 mm² | TO-5 | Id 20 fA, 800 pF | / |
Silicon Carbide UV Photodiodes with TIA
Silicon Carbide UV photodetector with integrated transimpendance amplifier in TO-5 metal can housing.
--> 0...5V stable output voltage
--> no external amplifier required
--> irradiance up to 18W/cm² and UVA,-B,-C versions available on request
Gallium Phosphide UV Photodiodes
UV photodiodes based on GaP
GaN, AlGaN and InGaN UV Photodiodes
UV-photodiodes based on GaN, AlGaN and InGaN are intrinsic visible blind due to high bandgap material, extreme irradiation hardness
GUVC and GUVB -> AlGaN , GUVA -> GaN , GUVV -> InGaN
GaN, AlGaN and InGaN UV Photodiodes with TIA
UV-photodiode based on GaN, AlGaN and InGaN with integrated transimpedance amplifier for ultra low level UV radiation detection
Wavelength of peak response: 280 nm, 320 nm, 370 nm, 395 nm
GUVC and GUVB -> AlGaN , GUVA -> GaN , GUVV -> InGaN
Spectral range | Package | Note | Data sheet | ||||||||||||||||
GUVC-T21GH | 220 - 280 nm | TO-5 | integrated TI amplifier, quartz window |
GUVB-T21GH |
220 - 320 nm |
TO-5 |
integrated TI amplifier, quartz
window |
request |
GUVA-T21GH |
220 - 370 nm |
TO-5 |
integrated TI amplifier, quartz
window |
request |
GUVV-T21GH |
220 - 395 nm |
TO-5 |
integrated TI amplifier, quartz
window |
| |
UV Sensor Modules GaN
UV Sensor Modules based on GaN
-> PHASE OUT
Spectral range | Size | Note | Data sheet | |
GUVA-T11GM-LA | 220 - 370 nm | 28 x 17 x 9 mm² | basic |
AlGaN UV Photodiodes
UV photodiodes based on AlGaN
Spectral range | Chip size | Package | Note | Data sheet | |
AlGaN-UVB | 225 - 317 nm | 0.076 mm² | TO-18 | peak at 300 nm |
TiO2 UV Photodiodes
UV photodiodes based on thin film TiO2 sensor technology
Spectral range | Package | Note | Data sheet | ||||||
UVD39 | 225 - 380 nm | TO-39 | peak at 300 nm, intrinsic visible blind |
TW30DZ |
253 - 361 nm |
TO-46 |
peak at 300 nm, intrinsic
visible blind |
| |