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First Sensor----德国品质,源于信赖!
First
Sensor公司是设计和生产先进光电零件、组件的厂家,是德国规模最大,历史最悠久的光电二极管和光传感器的制造商之一.
First
Sensor公司向全世界各个地区提供各种不同用途的探测器。公司具有超强规模的技术力量,提供最先进的产品和解决方案,以最优的性能在行业中享有绝佳的口碑。产品涉及工业、军事等行业的X射线、紫外、可见、近红外等光电探测器。
德国 First
Sensor公司First Sensor 成立于1991年,前身是东德的光电产品制造商“Werk für
Fernsehelektronik”,拥有一只由物理、化学及富有经验的工程师等专业人才组成的技术团队,并具有超过30年的光电探测器制造经验。目前First
Sensor
在高性能硅探测器探测领域已经处于领先地位,产品包括:PIN光电二极管、雪崩光电二极管、位敏光电二极管、四象限光电二极管、频敏光电二极管。光电二极管
Series Picture Example Short Description Specs PIN光电二极管
光电二极管(PIN),用于将光信号转换为电信号,形成光电效应/光电池。PIN光电二极管应用广泛,包括:
安检设备、激光测距、运动控制、分析仪器、生物医疗、光通信、军事、航空航天。 雪崩二极管 FISRT SENSOR
雪崩光电二极管(APD)
供应雪崩二极管(APD),是一种内部增益机制的光电二极管。根据具体应用,可以选择:蓝光增强型、红光增强型、红外增强型(900nm、1064nm)。
雪崩二极管广泛应用于:安检设备、激光测距、运动控制、分析仪器、生物医疗、光通信、军事、航空航天、光通讯。
PSD位敏光电二极管 FIRST SENSOR AG公司 位敏光电二极管
位敏探测器(PSD)是根据横向光电效应(电压和电流信号随着光斑位置变化而变换的现象)的半导体敏感元件,将照射在光敏面上的光斑强度和位移量转换为电信号,以实现位置探测。
四象限光电二极管/阵列 FIRST SENSOR公司 四象限光电二极管/阵列 四象限探...
光电二极管

供应光电二极管(PIN
photodiodes),用于将光信号转换为电信号,形成光电效应/光电池。该系列光电二极管应用广泛,包括:
安检设备、激光测距、运动控制、分析仪器、生物医疗、光通信、军事、航空航天。如果采购数量10片以上,提供配套的驱动电路模块。
Series 6b: Blue/Green sensitive
photodiodes |
Order # |
Type |
Active Area |
Dark Current |
Rise Time |
Chip |
Package |
Size |
Area |
5V |
410nm 5V
|
mm |
mm2 |
nA |
ns |
501429 |
PS1-6b |
TO52S1 |
1×1 |
1 |
0.05 |
10 |
501430 |
PS1-6b |
LCC6.1 |
1×1 |
1 |
0.05 |
10 |
501297 |
PC5-6b |
TO5 |
Ø2.52 |
5 |
0.1 |
20 |
501242 |
PS7-6b |
TO5 |
2.7×2.7 |
7 |
0.15 |
25 |
501229 |
PC10-6b |
TO5 |
Ø3.57 |
10 |
0.2 |
45 |
501241 |
PS13-6b |
TO5 |
3.5×3.5 |
13 |
0.25 |
50 |
501244 |
PS33-6b |
TO8 |
5.7×5.7 |
33 |
0.6 |
140 |
501258 |
PS100-6b |
LCC10S |
10×10 |
100 |
1 |
200 |
501135 |
PS100-6b |
CERpinE |
10×10 |
100 |
1 |
200 |
501045 |
PS100-6b |
CERpinG |
10×10 |
100 |
1 |
200 |
Band-pass filter modules:
PR20-6b TO5i with center
wavelength 488nm, 550nm, 633nm,
680nm |
Series 5b: High speed
photodiodes (for Blue-sensitive
photodiodes) |
Order # |
Type |
Active Area |
Dark Current |
Rise Time |
Chip |
Package |
Size |
Area |
3.5V |
405nm 3.5V
|
mm |
mm2 |
nA |
ns |
501424 |
PS1.0-5b |
TO52S1 |
1.0×1.0 |
1 |
0.01 |
1.3 |
501428 |
PS1.0-5b |
LCC6.1 |
1.0×1.0 |
1 |
0.01 |
1.3 |
501425 |
PS7-5b |
TO5 |
2.7×2.7 |
7 |
0.5 |
5 |
501426 |
PC10-5b |
TO5 |
Ø3.57 |
10 |
0.5 |
6 |
501427 |
PS13-5b |
TO5 |
3.5×3.5 |
13 |
1 |
6 |
Series 5t: High speed
photodiodes for low voltages
(for low operating voltages
between 3 and 5V, making them
ideal for VIS and NIR
applications in conjunction with
CMOS components) |
Order # |
Type |
Active Area |
Dark Current |
Rise Time |
Chip |
Package |
Size |
Area |
3.5V |
850nm 3.5V
|
mm |
mm2 |
nA |
ns |
501126 |
PS0.25-5t |
LCC6.1 |
0.5×0.5 |
0.25 |
0.01 |
0.4 |
501434 |
PS0.25-5t |
SMD1206 |
0.5×0.5 |
0.25 |
0.01 |
0.4 |
501125 |
PC0.55-5t |
LCC6.1 |
Ø0.84 |
0.55 |
0.01 |
1 |
501289 |
PC0.55-5t |
T1 3/4 |
Ø0.84 |
0.55 |
0.01 |
1 |
501290 |
PC0.55-5t |
T1 3/4 black |
Ø0.84 |
0.55 |
0.01 |
1 |
501127 |
PS1-5t |
LCC6.1 |
1.0×1.0 |
1 |
0.01 |
1 |
501432 |
PS7-5t |
TO5 |
2.7×2.7 |
7 |
0.5 |
1 |
Series 5: High speed photodiodes
(for fast rise times at low
reverse voltages) |
Order # |
Type |
Active Area |
Dark Current |
Rise Time |
Chip |
Package |
Size |
Area |
20V |
850nm 20V
|
mm |
mm2 |
nA |
ns |
500122 |
PS0.25-5 |
TO52S1 |
0.5×0.5 |
0.25 |
0.1 |
0.4 |
500119 |
PS0.25-5 |
TO52S3 |
0.5×0.5 |
0.25 |
0.1 |
0.4 |
500973 |
PS0.25-5 |
LCC6.1 |
0.5×0.5 |
0.25 |
0.1 |
0.4 |
500116 |
PS0.25-5 |
SMD1206 |
0.5×0.5 |
0.25 |
0.1 |
0.4 |
501257 |
PC0.55-5 |
TO52S1 |
Ø0.84 |
0.55 |
0.2 |
1 |
501124 |
PC0.55-5 |
LCC6.1 |
Ø0.84 |
0.55 |
0.2 |
1 |
500127 |
PS1.0-5 |
TO52S1 |
1.0×1.0 |
1 |
0.2 |
1.5 |
500128 |
PS1.0-5 |
TO52S3 |
1.0×1.0 |
1 |
0.2 |
1.5 |
501128 |
PS1.0-5 |
LCC6.1 |
1.0×1.0 |
1 |
0.2 |
1.5 |
501291 |
PS7-5 |
TO5 |
2.7×2.7 |
7 |
0.5 |
2 |
501218 |
PS11.9-5 |
TO5 |
3.45×3.45 |
11.9 |
1 |
3 |
500097 |
PC20-5 |
TO8 |
Ø5.05 |
20 |
2 |
3.5 |
501292 |
PS33-5 |
TO8 |
5.7×5.7 |
33 |
2 |
3.5 |
501011 |
PS100-5 |
LCC10S |
10×10 |
100 |
2 |
5 |
501433 |
PS100-5 |
CERpinG |
10×10 |
100 |
2 |
5 |
Series 6: IR photodiodes with
min. dark current (for
low-capacitance light detection
as well as for α, β, ϒ and
X-radiation detection) |
Order # |
Type |
Active Area |
Dark Current |
Rise Time |
Chip |
Package |
Size |
Area |
10V |
850nm 10V
|
mm |
mm2 |
nA |
ns |
500151 |
PC1-6 |
TO52S1 |
Ø1.13 |
1 |
0.05 |
10 |
500482 |
PC1-6 |
TO52S3 |
Ø1.13 |
1 |
0.05 |
10 |
501214 |
PC5-6 |
TO5 |
Ø2.52 |
5 |
0.1 |
13 |
501221 |
PS7-6 |
TO5 |
2.66×2.66 |
7 |
0.1 |
15 |
501193 |
PC10-6 |
TO5 |
Ø3.57 |
10 |
0.2 |
20 |
501246 |
PS13-6 |
TO5 |
3.5×3.5 |
13 |
0.2 |
20 |
500113 |
PC20-6 |
TO8 |
Ø5.05 |
20 |
0.3 |
25 |
501298 |
PS33-6 |
TO8 |
5.7×5.7 |
33 |
0.4 |
25 |
500103 |
PC50-6 |
TO8S |
Ø7.98 |
50 |
0.5 |
30 |
500082 |
PC100-6 |
BNC |
Ø11.28 |
100 |
1 |
40 |
501264 |
PS100-6 |
BNC |
10×10 |
100 |
1 |
40 |
501435 |
PS100-6 |
LCC10S |
10×10 |
100 |
1 |
40 |
500149 |
PS100-6 |
CERpinG |
10×10 |
100 |
1 |
40 |
Series 7: IR photodiodes with
fully depletable (very low
capacitance levels) |
Order # |
Type |
Active Area |
Dark Current |
Rise Time |
Chip |
Package |
Size |
Area |
10V |
905nm 10V
|
mm |
mm2 |
nA |
ns |
501285 |
PC5-7 |
TO8i |
Ø2.52 |
5 |
0.05 |
45 |
501286 |
PC10-7 |
TO8i |
Ø3.57 |
10 |
0.1 |
50 |
501287 |
PC20-7 |
TO8Si |
Ø5.05 |
20 |
0.2 |
50 |
501317 |
PS100-7 |
LCC10G |
10×10 |
100 |
1.5 |
50 |
Series Q: Photodiodes for 1064nm
(specifically for laser
rangefinders, laser-based
targeting systems or any
applications using YAG lasers or
similar NIR radiation sources) |
Order # |
Type |
Active Area |
Dark Current |
Rise Time |
Chip |
Package |
Size |
Area |
150V |
1064nm 150v
|
mm |
mm2 |
nA |
ns |
501446 |
PC10-Q |
TO8i |
Ø3.57 |
10 |
0.5 |
14 |
501447 |
PC20-Q |
TO8Si |
Ø5.05 |
20 |
1 |
14 |
501273 |
PS100-Q |
LCC10G |
10×10 |
100 |
80 |
14 |
501448 |
PC50-Q |
TO8Si |
Ø8 |
50 |
2.5 |
14 |
|
光电二极管模块

供应光电二极管模块,自带集成放大电路和温度补偿功能,配套用于雪崩二极管、位敏探测器、四象限探测器、波长敏感探测器,特别适合于系统集成、仪器开发、科学研究。
自带集成放大电路板和温度补偿功能的雪崩二极管和雪崩二极管阵列
Order # |
Chip |
Type |
50159502 |
AD1100-8 |
USB-module APD-eval-kit |
501543 |
SiPM |
USB-module SiPM-eval-kit |
50146502 |
25AA0.04-9 |
125 MHz LIDAR APD-array-eval-kit |
501476 |
64AA0.04-9 |
125 MHz LIDAR APD-array-eval-kit |
不带集成放大电路板的雪崩二极管
Order # |
Type |
Transimpedance/Ohm |
Bandwidth/MHz |
Chip |
Package |
Series 8 (for 800nm) |
500002 |
AD230-8 |
TO5 |
2750 |
2000 |
501535 |
AD230-8 |
TO52 |
2750 |
2000 |
500003 |
AD500-8 |
TO5 |
2750 |
1000 |
501536 |
AD500-8 |
TO52 |
2750 |
1300 |
Series 9 (for 900nm) |
501403 |
AD500-9-8015 |
TO52 |
2750 |
500 |
501386 |
16AA0.13-9 |
Ceramic |
10k |
500 |
500756 |
AD230-9 |
TO5 |
2750 |
600 |
500490 |
AD500-9 |
TO5 |
2750 |
500 |
Series 10 (for 1064nm) |
501387 |
AD800-10 |
TO8S |
10k |
65 |
自带集成放大电路板和温度补偿功能的位敏探测器、四象限探测器、波长敏感探测器
Order # |
Chip |
Type |
Package |
501101 |
QP45-Q |
Quadrant PD |
HVSD |
500741 |
QP50-6 |
Quadrant PD |
SD2 |
500964 |
QP50-6 |
Quadrant PD |
SD2-DIAG |
501102 |
QP50-6 (18µm) |
Quadrant PD |
SD2 |
501110 |
QP50-6 (18µm) |
Quadrant PD |
SD2-DIAG |
501104 |
QP154-Q |
Quadrant PD |
HVSD |
500788 |
DL16-7 |
PSD |
PCBA3 |
500744 |
DL100-7 |
PSD |
PCBA3 |
500819 |
DL400-7 |
PSD |
PCBA |
500008 |
WS7.56 |
Wavelength sensitive PD |
PCBA2 |
501495 |
X100-7 with Scintillator |
Gamma pulse counter |
Shielded module |
高压电源模块
Order # |
Max.Voltage/V |
Ripple/mV |
Description |
Feature |
501385 |
-500 |
7.5 |
High performance HV source |
Ultra low ripple |
501381 |
+500 |
7.5 |
High performance HV source |
Ultra low ripple |
501382 |
+200 |
7.5 |
High performance HV source |
Ultra low ripple |
501383 |
+200 |
<10 |
Compact HV source |
Small footprint |
501384 |
+60 |
<10 |
PIN-photodiode HV source |
Very small footprint |
|
雪崩二极管

供应雪崩二极管(APD,Avalanche
photodiodes),是一种内部增益机制的光电二极管:蓝光增强型、红光增强型、红外增强型(900nm、1064nm)。该系列雪崩二极管应用广泛,包括:安检设备、激光测距、运动控制、分析仪器、生物医疗、光通信、军事、航空航天、光通讯。备注:如果采购数量10片以上,提供配套的驱动电路模块。
Series 11: Blue sensitivity
enhanced (for biomedical
applications) |
Order # |
Type |
Active Area |
Dark Current |
Rise Time |
Chip |
Package |
Size |
Area |
M=100 |
410nm 50Ω |
mm |
mm2 |
nA |
ns |
500970 |
AD800-11 |
TO52S1 |
Ø0.8 |
0.5 |
1 |
1 |
500967 |
AD1900-11 |
TO5i |
Ø1.95 |
3 |
5 |
2 |
Series 12: Red sensitivity
enhanced (cut-off frequency up
to 3 GHz) |
Order # |
Type |
Active Area |
Dark Current |
Rise Time |
Chip |
Package |
Size |
Area |
660nm M=100 |
660nm 50Ω |
mm |
mm2 |
A/W |
GHz |
501828 |
AD100-12 |
LCC6.1 |
Ø0.1 |
0.008 |
50 |
typ.3, min.2 |
501829 |
AD100-12 |
LCC6.1f |
Ø0.1 |
0.008 |
44 |
typ.3, min.2 |
501831 |
AD100-12 |
TO52S1 |
Ø0.1 |
0.008 |
50 |
typ.3, min.2 |
501157 |
AD230-12 |
LCC6.1 |
Ø0.23 |
0.042 |
50 |
typ.3, min.2 |
501156 |
AD230-12 |
LCC6.1f |
Ø0.23 |
0.042 |
44 |
typ.3, min.2 |
501820 |
AD230-12 |
LCC6.1f |
Ø0.23 |
0.042 |
44 |
typ.3, min.2 |
501162 |
AD230-12 |
TO52S1 |
Ø0.23 |
0.042 |
50 |
typ.3, min.2 |
501155 |
AD500-12 |
LCC6.1 |
Ø0.5 |
0.196 |
50 |
typ.3, min.2 |
501154 |
AD500-12 |
LCC6.1f |
Ø0.5 |
0.196 |
44 |
typ.3, min.2 |
501819 |
AD500-12 |
LCC6.1f |
Ø0.5 |
0.196 |
44 |
typ.3, min.2 |
501163 |
AD500-12 |
TO52S1 |
Ø0.5 |
0.196 |
50 |
typ.3, min.2 |
Series 8: Optimized for high
cut-off frequencies-850 nm
(optimized for high speeds) |
Order # |
Type |
Active Area |
Dark Current |
Rise Time |
Chip |
Package |
Size |
Area |
M=100 |
M=100 20V 50Ω |
mm |
mm2 |
nA |
ns |
501810 |
AD100-8 |
LCC6.1 |
Ø0.1 |
0.008 |
0.05 |
<0.18 |
501811 |
AD100-8 |
LCC6.1f |
Ø0.1 |
0.008 |
0.05 |
<0.18 |
501812 |
AD100-8 |
LCC6.1f |
Ø0.1 |
0.008 |
0.05 |
<0.18 |
500011 |
AD100-8 |
TO52S1 |
Ø0.1 |
0.008 |
0.05 |
<0.18 |
501171 |
AD100-8 |
TO52S3 |
Ø0.1 |
0.008 |
0.05 |
<0.18 |
501078 |
AD230-8 |
LCC6.1 |
Ø0.23 |
0.04 |
0.3 |
0.18 |
501079 |
AD230-8 |
LCC6.1f |
Ø0.23 |
0.04 |
0.3 |
0.18 |
501805 |
AD230-8 |
LCC6.1f |
Ø0.23 |
0.04 |
0.3 |
0.18 |
500019 |
AD230-8 |
TO52S1 |
Ø0.23 |
0.04 |
0.3 |
0.18 |
500022 |
AD230-8 |
TO52S3 |
Ø0.23 |
0.04 |
0.3 |
0.18 |
501496 |
AD230-8 |
ODFN2x2 |
Ø0.23 |
0.04 |
0.3 |
0.18 |
501077 |
AD500-8 |
LCC6.1 |
Ø0.5 |
0.2 |
0.5 |
0.35 |
501076 |
AD500-8 |
LCC6.1f |
Ø0.5 |
0.2 |
0.5 |
0.35 |
501809 |
AD500-8 |
LCC6.1f |
Ø0.5 |
0.2 |
0.5 |
0.35 |
500030 |
AD500-8 |
TO52S1 |
Ø0.5 |
0.2 |
0.5 |
0.35 |
500305 |
AD500-8 |
TO52S2 |
Ø0.5 |
0.2 |
0.5 |
0.35 |
500155 |
AD500-8 |
TO52S3 |
Ø0.5 |
0.2 |
0.5 |
0.35 |
500947 |
AD800-8 |
TO52S1 |
Ø0.8 |
0.5 |
2 |
0.7 |
501117 |
AD1100-8 |
TO52S1 |
Ø1.13 |
1 |
4-6 |
1 |
500015 |
AD1900-8 |
TO5i |
Ø1.95 |
3 |
15 |
1.4 |
501194 |
AD3000-8 |
TO5i |
Ø3 |
7.07 |
30 |
2 |
500160 |
AD5000-8 |
TO8i |
Ø5 |
19.63 |
60 |
3 |
500002 |
AD230-8-2.3G |
TO5 |
AD230-8-2.3G TO5 is a high
frequency optical data receiver
comprising an Avalanche Silicon
Photodiode and a transimpedance
amplifier in a hermetically
sealed TO5 package. |
500003 |
AD500-8-1.3G |
TO5 |
AD500-8-1.3G TO5 is a high
frequency optical data receiver
comprising an Avalanche Silicon
Photodiode and a transimpedance
amplifier in a hermetically
sealed TO5 package. |
Series 9: NIR sensitivity
enhanced-900nm (specifically for
LIDAR and laser rangefinders) |
Order # |
Type |
Active Area |
Dark Current |
Rise Time |
Chip |
Package |
Size |
Area |
M=100 |
M=100 |
mm |
mm2 |
nA |
ns |
501815 |
AD100-9 |
LCC6.1 |
Ø0.1 |
0.008 |
0.1 |
<0.5 |
501816 |
AD100-9 |
LCC6.1f |
Ø0.1 |
0.008 |
0.1 |
<0.5 |
501123 |
AD230-9 |
LCC6.1 |
Ø0.23 |
0.04 |
0.5 |
0.5 |
501817 |
AD230-9 |
LCC6.1f |
Ø0.23 |
0.04 |
0.5 |
0.5 |
500020 |
AD230-9 |
TO52S1 |
Ø0.23 |
0.04 |
0.5 |
0.5 |
501265 |
AD230-9 |
TO52S1F2 |
Ø0.23 |
0.04 |
0.5 |
0.5 |
500023 |
AD230-9 |
TO52S3 |
Ø0.23 |
0.04 |
0.5 |
0.5 |
501122 |
AD500-9 |
LCC6.1 |
Ø0.5 |
0.2 |
0.8 |
0.55 |
501818 |
AD500-9 |
LCC6.1f |
Ø0.5 |
0.2 |
0.8 |
0.55 |
500031 |
AD500-9 |
TO52S1 |
Ø0.5 |
0.2 |
0.8 |
0.55 |
500590 |
AD500-9 |
TO52S1F2 |
Ø0.5 |
0.2 |
0.8 |
0.55 |
500306 |
AD500-9 |
TO52S2 |
Ø0.5 |
0.2 |
0.8 |
0.55 |
500156 |
AD500-9 |
TO52S3 |
Ø0.5 |
0.2 |
0.8 |
0.55 |
501196 |
AD800-9 |
TO52S1 |
Ø0.8 |
0.5 |
2 |
0.9 |
501197 |
AD1100-9 |
TO52S1 |
Ø1.13 |
1 |
4 |
1.3 |
501208 |
AD1500-9 |
TO5i |
Ø1.5 |
1.77 |
2 |
2 |
501198 |
AD3000-9 |
TO5i |
Ø3 |
7.07 |
30 |
2 |
500161 |
AD5000-9 |
TO8i |
Ø5 |
19.63 |
60 |
3 |
500756 |
AD230-9-400M |
TO5 |
AD230-9-400M-TO5 is a high
frequency optical data receiver
comprising an Avalanche Silicon
Photodiode and a transimpedance
amplifier in a hermetically
sealed TO-5 package. |
500490 |
AD500-9-400M |
TO5 |
AD500-9-400M-TO5 is a high
frequency optical data receiver
comprising an Avalanche Silicon
Photodiode and a transimpedance
amplifier in a hermetically
sealed TO-5 package. |
Multi-Element Array |
501099 |
8AA0.4-9 |
SOJ22GL |
APD Array 8 Elements, QE>80% at
760-910nm with NTC |
501098 |
16AA0.13-9 |
SOJ22GL |
APD Array 16 Elements, QE>80% at
760-910nm with NTC |
500038 |
16AA0.13-9 |
DIL18 |
APD Array 16 Elements, QE>80% at
760-910nm |
501097 |
16AA0.4-9 |
SOJ22GL |
APD Array 16 Elements, QE>80% at
760-910nm |
50130802 |
25AA0.04-9 |
BGA |
APD Array 25 (5×5) elements,
QE>80% at 760-910nm with PTC |
50130802 |
25AA0.16-9 |
BGA |
APD Array 25 (5×5) elements,
QE>80% at 760-910nm with PTC |
50130702 |
64AA0.04-9 |
BGA |
APD Array 64 (8×8) elements,
QE>80% at 760-910nm with PTC |
501207 |
QA4000-9 |
TO8Si |
Quadrant Avalanche Photodiode,
QE>80% at 760-910nm |
Series 10: NIR sensitivity
enhanced - 1064nm (specifically
for laser rangefinders,
targeting systems or any
applications using YAG lasers or
similar NIR radiation sources) |
Order # |
Type |
Active Area |
Dark Current |
Rise Time |
Chip |
Package |
Size |
Area |
M=100 |
M=100 1064nm
|
mm |
mm2 |
nA |
ns |
500953 |
AD500-10 |
TO5i |
Ø0.5 |
0.2 |
1.5 |
4 |
501233 |
AD800-10 |
TO5i |
Ø0.8 |
0.5 |
3 |
5 |
500883 |
AD1500-10 |
TO5i |
Ø1.5 |
1.77 |
7 |
5 |
50123401 |
AD4000-10 |
TO8Si |
Ø4 |
12.56 |
50 |
6 |
501387 |
AD800-10 |
TO8S |
High speed, high gain, low
noise, low power consumption
hybrid (AD800-10+TIA) |
Multi-Element Array |
501174 |
QA4000-10 |
TO8Si |
Quadrant Avalanche Photodiode,
High QE at 850-1070nm |
|
光电倍增管

供应光电倍增管(Silicon
Photomultiplier),基于KETEK技术,专注于微弱光的检测。该系列光电倍增管具有如下特点:单光子计数、灵敏度高、信噪比高、效应速度快、温度影响小、结构紧凑,广泛应用于:化学分析、医疗诊断、科学研究、工业集成。
Order # |
Chip Package |
Active Area(mm²) |
Pixel Size(µm) |
Pixel Number |
Trench Technology |
Geometrical Efficiency(%) |
Dark Rate |
50150804 |
THD |
1.2×1.2 |
50×50 |
576 |
No |
70 |
500 |
50150801 |
THD |
3.0×3.0 |
50×50 |
3600 |
No |
70 |
500 |
50150802 |
THD |
3.0×3.0 |
50×50 |
3600 |
Yes |
63 |
300 |
50150803 |
THD |
6.0×6.0 |
60×60 |
10000 |
Yes |
66 |
500 |
|
APD阵列

供应APD阵列:线性APD阵列、矩阵APD阵列。该系列雪崩二极管阵列主要用于:激光雷达、激光测距。我们同时供应雪崩二极管和雪崩二极管模块。
Order # |
Chip |
Package |
Description |
501099 |
8AA0.4-9 |
SOJ22GL |
APD Array 8 Elements, QE>80% at
760-910nm with NTC |
501098 |
16AA0.13-9 |
SOJ22GL |
APD Array 16 Elements, QE>80% at
760-910nm with NTC |
500038 |
16AA0.13-9 |
DIL18 |
APD Array 16 Elements, QE>80% at
760-910nm |
501097 |
16AA0.4-9 |
SOJ22GL |
APD Array 16 Elements, QE>80% at
760-910nm |
50130802 |
25AA0.04-9 |
BGA |
APD Array 25 (5x5) elements,
QE>80% at 760-910nm with PTC |
50130902 |
25AA0.16-9 |
BGA |
APD Array 25 (5x5) elements,
QE>80% at 760-910nm with PTC |
50130702 |
64AA0.04-9 |
BGA |
APD Array 64 (8x8) elements,
QE>80% at 760-910nm with PTC |
501207 |
QA4000-9 |
TO8Si |
Quadrant Avalanche Photodiode,
QE>80% at 760-910nm |
|
位敏探测器

供应位敏探测器(PSD,Position
Sensitive
Detector),是根据横向光电效应(电压和电流信号随着光斑位置变化而变换的现象)的半导体敏感元件,将照射在光敏面上的光斑强度和位移量转换为电信号,以实现位置探测。
Order # |
Chip |
Package |
Dimensions |
ActiveArea(mm) |
Area(mm²) |
Rise Time(ns) |
500588 |
OD3.5-6 |
SO8 |
single |
3.5×1 |
3.5 |
200 |
500073 |
OD3.5-6 |
SMD |
single |
3.5×1 |
3.5 |
200 |
501278 |
OD6-6 |
SO16 |
single |
6×1 |
6 |
200 |
501115 |
OD6-6 |
SMD |
single |
6×1 |
6 |
200 |
500062 |
DL16-7 |
CERpin |
dual axis |
4×4 |
16 |
500 |
500162 |
DL16-7 |
CERsmd |
dual axis |
4×4 |
16 |
500 |
501020 |
DL16-7 |
LCC10G |
dual axis |
4×4 |
16 |
500 |
500054 |
DL100-7 |
CERpin |
dual axis |
10×10 |
100 |
4000 |
500056 |
DL100-7 |
CERsmd |
dual axis |
10×10 |
100 |
4000 |
500952 |
DL100-7 |
LCC10 |
dual axis |
10×10 |
100 |
4000 |
500066 |
DL400-7 |
CERpin |
dual axis |
20×20 |
400 |
4000 |
500068 |
DL400-7 |
CERsmd |
dual axis |
20×20 |
400 |
4000 |
|
四象限探测器

供应四象限探测器(QP,Quadrant
photodiodes),由小间隙隔开的四个有效探测区域组成。该系列四象限探测器应用广泛,包括:激光光束的位置测量、需要精确调整的光学系统。
Series 6 - Quadrant photodiodes
(low dark current) |
Order # |
Type |
Active Area |
Dark Current |
Rise Time |
Chip |
Package |
Size |
Area |
10V |
850nm 10V |
mm |
mm2 |
nA |
ns |
501222 |
QP1-6 |
TO52 |
Ø1.13 |
4×0.25 |
0.1 |
20 |
501040 |
QP5-6 |
TO5 |
Ø2.52 |
4×1.25 |
0.2 |
20 |
501254 |
QP5.8-6 |
TO5 |
2.4×2.4 |
4×1.45 |
0.4 |
20 |
501256 |
QP10-6 |
TO5 |
Ø3.57 |
4×2.5 |
0.5 |
20 |
500140 |
QP20-6 |
TO8S |
Ø5.05 |
4×5 |
1 |
30 |
500732 |
QP50-6 |
TO8S |
Ø7.8 |
4×12.5 |
2 |
40 |
500142 |
QP50-6 |
TO8S |
Ø7.8 |
4×12.5 |
2 |
40 |
501416 |
QP50-6 |
TO8S flat |
Ø7.8 |
4×12.5 |
2 |
40 |
501417 |
QP50-6 |
TO8S flat |
Ø7.8 |
4×12.5 |
2 |
40 |
501276 |
QP100-6 |
LCC10G |
Ø11.2 |
4×25 |
4 |
40 |
50127601 |
QP100-6 |
LCC10S |
Ø11.2 |
4×25 |
4 |
40 |
Series 7 - Quadrant photodiodes
(fully depletable) |
Order # |
Type |
Active Area |
Dark Current |
Rise Time |
Chip |
Package |
Size |
Area |
10V |
905nm 10V |
mm |
mm2 |
nA |
ns |
501319 |
QP100-7 |
LCC10G |
10×10 |
4×25 |
2 |
50 |
Series Q - Quadrant photodiodes
(for 1064nm) |
Order # |
Type |
Active Area |
Dark Current |
Rise Time |
Chip |
Package |
Size |
Area |
150V |
1064nm 150V 50Ω |
mm |
mm2 |
nA |
ns |
501049 |
QP22-Q |
TO8S |
Ø5.3 |
4×5.7 |
1.5 |
12 |
501048 |
QP45-Q |
TO8S |
6.7×6.7 |
4×10.96 |
8 |
12 |
501275 |
QP45-Q |
LCC10G |
6.7×6.7 |
4×10.96 |
8 |
12 |
501272 |
QP100-Q |
LCC10G |
10×10 |
4×25 |
6.5 |
12 |
500798 |
QP154-Q |
TO1032i |
Ø14.0 |
4×38.5 |
10 |
12 |
501313 |
QP154-Q |
TO1081i |
Ø14.0 |
4×38.5 |
10 |
12 |
|
铟镓砷探测器

供应铟镓砷探测器(InGaAs
detectors),有效探测直径可达3mm,具有暗电流低和灵敏度高的特点,封装形式:TO针脚形式和SMD贴片形式。
InGaAs detectors (high
sensitivity up to 2600nm) |
Order # |
Type |
Active Area |
Dark Current |
Spectral responsivity |
Waveband |
Chip |
Package |
Size |
Area |
5V |
650nm |
1550nm |
mm |
mm2 |
nA |
A/W |
A/W |
nm |
501201 |
PC0.7-i |
LCC6.1 |
1 |
0.7 |
2 |
0.05 |
0.95 |
900-1700 |
501203 |
PC0.7-i |
TO52S1 |
1 |
0.7 |
2 |
0.05 |
0.95 |
900-1700 |
501202 |
PC0.7-ix |
LCC6.1 |
1 |
0.7 |
2 |
0.3 |
0.95 |
600-1700 |
501204 |
PC0.7-ix |
TO52S1 |
1 |
0.7 |
2 |
0.3 |
0.95 |
600-1700 |
501251 |
PC2.6-i |
TO5i |
2 |
2.6 |
10 |
0.05 |
0.95 |
900-1700 |
501266 |
PC7.1-i |
TO5i |
3 |
7.1 |
25 |
0.05 |
0.95 |
900-1700 |
|
波长敏感探测器

供应波长敏感探测器(WS,Wavelength-sensitive
diodes),利用特定波长在硅基材料的辐射吸收深度来实现,特别适合于单色光的波长检测。
Wavelength sensitive diodes
(particularly suitable for
monochromatic light) |
Order # |
Type |
Dark Current |
Rise Time Diode 1 |
Rise Time Diode 2 |
Chip |
Package |
5V |
0V 1kΩ |
0V 1kΩ |
nA |
ns |
ns |
501224 |
WS7.56 |
TO5 |
10 |
10000 |
1000 |
501225 |
WS7.56 |
TO5i |
5 |
10000 |
1000 |
|
辐射探测器

供应辐射探测器(Detectors
for Ionizing
Radiation),具有吸收容量高、暗电流低、完全耗尽的特点,用于检测原子颗粒。
Detectors for ionizing radiation
(silicon radiation detectors) |
Order # |
Type |
Active Area |
Dark Current |
Gamma-energy (KeV) |
Chip |
Package |
Size |
Area |
mm |
mm2 |
nA |
KeV |
50190301 |
X5-γ |
TO8S |
Ø2.52 |
5 |
0.01 |
>1 |
50190401 |
X10-γ |
TO8Si |
Ø3.75 |
10 |
0.02 |
>1 |
50190001 |
X10-γ |
TO8S Sc |
Ø3.75 |
10 |
0.02 |
>2 |
501907 |
X10-6 |
TO39 |
Ø3.57 |
10 |
0.5 |
>5 |
501401 |
X100-7 |
LCC10 |
10×10 |
100 |
3 |
>5 |
501400 |
X100-7 |
CerPin |
10×10 |
100 |
3 |
>5 |
50144501 |
X100-7.2 |
CerPin |
10×10 |
100 |
5 |
>5 |
50147702 |
X100-7 |
CerPin |
10×10 |
100 |
5 |
>5 |
50147701 |
X100-7 |
CerPin |
10×10 |
100 |
5 |
>5 |
Arrays for X-ray inspection,
optimized for scintillator
luminescence. Suitable for
linear multi-device-assembly
with constant photodiode pitch |
Order # |
Type |
Elements |
Pitch |
Active Area |
Dark Current |
Capacitance |
Chip |
Package |
Size |
Area |
mm |
mm |
mm2 |
pA |
pF |
50146101 |
16XA1.9-B |
DIL18 full |
16 |
1.275 |
0.9×2.15 |
1.94 |
5 |
250 |
50146102 |
16XA1.9-B |
DIL18 slim |
16 |
1.275 |
0.9×2.15 |
1.94 |
5 |
250 |
50146201 |
16XA2.6-A |
DIL18 full |
16 |
1.575 |
1.2×2.15 |
2.58 |
5 |
135 |
50146202 |
16XA2.6-A |
DIL18 slim |
16 |
1.575 |
1.2×2.15 |
2.58 |
5 |
135 |
50146301 |
16XA5.2-A |
DIL18 full |
16 |
2.525 |
2.15×2.4 |
5.16 |
7.5 |
240 |
50146302 |
16XA5.2-A |
DIL18 slim |
16 |
2.525 |
2.15×2.4 |
5.16 |
7.5 |
240 |
|
光电管接收模块

供应光电管接收模块,由如下两部分组成:光电二极管和前置放大电路,TEC制冷模块可选(提高系统的信噪比)。该系列光电探测器模块对电路进行优化,将电磁干扰降到最小,内置前置放大电路可以用示波器或数据采集卡直接读取对应的电压值。根据不同应用,光电二极管可选,包括:UV
Si,Vis Si,NIR InGaAs,Extended
InGaAs,PbS,PbSe。
根据探测器种类、有效探测面积、是否包含TEC制冷,如下型号可供选择:
Photodiode Receiver Module, Si
(200-1000nm), 2.5mm
Photodiode Receiver Module, Si
(200-1000nm), 5.0mm
Photodiode Receiver Module, Si
(200-1000nm), 5.0mm, TE Cooled
Photodiode Receiver Module, Si
(200-1000nm), 10.0mm
Photodiode Receiver Module, Si
(300-1000nm), 1.0mm
Photodiode Receiver Module, Si
(300-1000nm), 2.5mm
Photodiode Receiver Module, Si
(300-1000nm), 5.0mm
Photodiode Receiver Module, Si
(300-1000nm), 5.0mm, TE Cooled
Photodiode Receiver Module, Si
(300-1000nm), 10.0mm
Photodiode Receiver Module, Si
(300-1000nm), 11.0mm, TE Cooled
Photodiode Receiver Module, InGaAs
(800-1600nm), 3.0mm, TE Cooled
Photodiode Receiver Module,
InGaAs(800-1700nm), 1.0mm
Photodiode Receiver Module, InGaAs
(1000-1700nm), 3.0mm
Photodiode Receiver Module,
InGaAs(1200-2500nm), 1.0mm, TE
Cooled
Photodiode Receiver Module,
InGaAs(1200-2500nm), 3.0mm, TE
Cooled
Photodiode Receiver Module,
InGaAs(1200-2600nm), 1.0mm
Photodiode Receiver Module,
InGaAs(1200-2600nm), 3.0mm
Photodiode Receiver Module,
PbS(1000-2800nm), 2.0mm, TE Cooled
Photodiode Receiver Module,
PbSe(1000-4500nm), 2.0mm, TE Cooled
|
光电管放大器
供应 光电管放大器,直接将 光电二极管、光电倍增管等电流源的电流信号转换成数字信号。通过切换A/W,可以设置电流值显示或者功率值显示(作为光功率计)。该系列光电管放大器具有如下特点:满量程输入范围从±20nA至±20mA;可变偏压从-14V至14V;LCD显示读数;RS-232串行接口。
Specifications
|
Max input without damage
|
±25mA
|
Full scale range
|
±20nA to 20mA in decade
steps, 1pA max. resolution
|
A/W setting
|
0.100 to 1.000A/W in
increments of .005A/W
|
Output impedance
|
100Ω
|
Bias voltage
|
Selectable -14V to +14V in
6.5mV increments
|
Analog ourput port
|
±2V corresponds to ±20,000
counts of range in use
|
Noise and Drift
|
<1pA/5 seconds on most
sensitive range
|
Frequency response(-3dB)
|
DC to 2KHz, most sensitive
range
|
DC to 40KHz, least sensitive
range
|
Display
|
4 1/2 digit LCD, 0.4" high
|
Power requirement
|
Rechargeable Ni-MH batteries
with approximately 10-hours
|
External supply
|
85-250VAC, 50-60Hz, <9VA
|
Dimensions
|
140mm(W)×63mm(H)×215mm(L)
|
Weight
|
0.9kg, excluding external
power supply
|
Operating temperature
|
0 to +40°C
|
Accessories provided
|
RS-232 cable, power
supply/charger, operating
manual
|
|
压力传感器

供应压力传感器,特点:能效高、稳定性好、准确度高、适合恶劣环境。该系列压力传感器应用:工业生产、环境保护、测量、医学领域。
Model
|
HDU
|
HMU
|
Pressure ranges
|
100 mbar to 5 bar
|
100 mbar to 10 bar
|
1 to 70 psi
|
1 to 70 psi
|
Pressure type
|
Absolute, Gage, Differential
|
Absolute, Gage, Differential
|
Output signal
|
100mV (FSO)
|
100mV (FSO)
|
Thermal effects
|
Offset
|
±0.02 %FSS/°C
|
±0.02% FSS/°C
|
Span
|
-0.2% FSS/°C
|
-0.2% FSS/°C
|
Bridge impedance
|
0.26 %/°C
|
0.26 %/°C
|
Temp. range operating
|
-40-85°C
|
-40-85°C
|
Dimensions without
connections
|
12×15×7mm³
|
10×13×6mm³
|
Features
|
Analogue sensor with
nearly unlimited resolution
|
Analogue sensor with
nearly unlimited resolution
|
Cost-effective basic
pressure sensor
|
Cost-effective basic
pressure sensor
|
Increased media
compatibility
|
Model
|
HCL
|
HDO
|
HRO
|
Pressure ranges
|
5 to 75 mbar
|
10 mbar to 5 bar
|
10 mbar to 10 bar
|
2 to 30 inH2
|
4 inH2O to 70 psi
|
4 inH2O to 150 psi
|
Pressure type
|
Gage, Differential
|
Absolute, Gage, Differential
|
Gage, Differential
|
Output signal
|
20mV (FSO)
|
90mV (FSO)
|
90mV (FSO)
|
Accuracy, non-linearity
|
±0.05 %FSO
|
±0.1 %FSO (P-grade)
|
±0.25 %FSS
|
±0.2 %FSO (H-grade)
|
Temp. range compensated
|
0-70°C
|
0-50°C
|
0-70°C
|
Temp. range operating
|
-25-85°C
|
-40-85°C
|
-25-85°C
|
Dimensions without
connections
|
13×16×7mm³
|
12×15×7mm³
|
29×18×11mm³
|
Features
|
Analogue sensor with nearly
unlimited resolution
|
Analogue sensor with
nearly unlimited resolution
|
Analogue sensor with
nearly unlimited resolution
|
For very low pressures
|
Different accuracy classes
available
|
Different accuracy classes
available
|
Excellent offset stability
|
Virtually no position
sensitivity
|
Model
|
HCLA
|
HCE
|
HDI
|
Pressure ranges
|
2.5 to 75 mbar
|
10 mbar to 5 bar
|
10 mbar to 5 bar
|
1 to 30 inH2O
|
4 inH2O to 70 psi
|
4 inH2O to 70 psi
|
Pressure type
|
Gage, Differential
|
Absolute, Gage, Differential
|
Absolute, Gage, Differential
|
Output signal
|
0.25-4.25 V, I²C bus
|
0.25-4.25 V, SPI bus
|
0.5-4.5 V, I²C bus
|
Accuracy, non-linearity
|
±0.05 %FSS
|
±0.1 %FSS
|
±0.1 %FSS
|
Accuracy, total
accuracy
|
N.A.
|
±0.5 %FSS
|
±0.5 %FSS (P-grade)
|
±1.5 %FSS (H-grade)
|
Temp. range operating
|
-25-85°C
|
-25-85°C
|
-20-85 °C
|
Dimensions without
connections
|
13×16×7mm³
|
13×16×7mm³
|
12×15×7mm³
|
Features
|
Digital signal conditioning
|
Digital signal conditioning
|
Digital signal conditioning
|
For very low pressures
|
Very high total accuracy
|
Very high total accuracy
|
Excellent offset stability
and virtually no position
sensitivity
|
SPI bus interface and
analogue output \at the same
time
|
I²C bus interface and
analogue output
at the same time
|
I²C bus interface and
analogue output
at the same time
|
Different accuracy classes
available
|
Model
|
LBA
|
LDE
|
Pressure ranges
|
25 to 500 Pa
|
25 to 500 Pa
|
0.1 to 2 inH2O
|
0.1 to 2 inH2O
|
Pressure type
|
Gage, Differential
|
Gage, Differential
|
Output signal
|
0.5-4.5 V
|
0.5-4.5 V, SPI bus
|
Offset stability
|
0.3 % p.a.
|
0.1 % p.a.
|
Accuracy, total accuracy
|
±1.5 %FSS
|
±1.5 %FSS
|
Dimensions without
connections
|
13×18×8mm³
|
13×18×8mm³
|
Features
|
Unmatched sensitivity and
resolution
|
Unmatched offset stability,
linearity, sensitivity and
resolution
|
Analogue signal conditioning
|
Digital signal conditioning
with SPI bus interface and
analogue output at the same
time
|
Micro-flow channel
integrated
within sensor chip
|
Micro-flow channel
integrated
within sensor chip
|
High immunity to dust,
humidity and long tubing
|
High immunity to dust,
humidity and long tubing
|
Miniature housing
|
Miniature housing
|
Model
|
HMA
|
HMI
|
HME
|
Pressure ranges
|
100 mbar to 10 bar
|
100 mbar to 10 bar
|
101 mbar to 10 bar
|
1 to 150 psi
|
1 to 150 psi
|
1 to 150 psi
|
Pressure type
|
Gage, Differential
|
Gage, Differential
|
Gage, Differential
|
Output signal
|
0.5-4.5 V
|
I²C bus
|
SPI bus
|
Accuracy,
non-linearity
|
±0.25 %FSS
|
±0.25 %FSS
|
±0.25 %FSS
|
Accuracy, total accuracy
|
±1.5 %FSS
|
±1.5 %FSS
|
±1.5 %FSS
|
Temp. range compensated
|
-20-85°C
|
-20-85°C
|
-20-85°C
|
Dimensions without
connections
|
10×13×6mm³
|
10×13×6mm³
|
10×13×6mm³
|
Features
|
Increased media
compatibility for gases and
liquids
|
Increased media
compatibility for gases and
liquids
|
Increased media
compatibility for gases and
liquids
|
Digital signal conditioning
|
Digital signal conditioning
|
Digital signal conditioning
|
Analogue output signal
|
I²C bus interface
|
SPI bus interface
|
Very small housings
|
Very small housings
|
Very small housings
|
Model
|
SSO
|
SSI
|
KMA
|
Pressure ranges
|
200 mbar to 35 bar
|
200 mbar to 35 bar
|
500 mbar to 100 bar
|
3 to 500 ps
|
3 to 500 psi
|
7 to 1500 psi
|
Pressure type
|
Absolute, Gage
|
Absolute, Gage
|
Gage
|
Output signal
|
100mV (FSO)
|
0.5-4.5V, I²C bus
|
0.5-4.5V
|
Accuracy,
non-linearity
|
±0.1 %FSS
|
±0.1 %FSS
|
±0.4 %FSO
|
Accuracy, total accuracy
|
±1.5 %FSS
|
±1.5 %FSS
|
±1.5 %FSS
|
Temp. range compensated
|
0-50°C
|
-20-85°C
|
0-85°C
|
Temp. range operating
|
-40-125°C
|
-40-120°C
|
-20-85°C
|
Dimensions without
connections
|
Φ19mm
|
Φ19mm
|
Φ22×27mm
|
Features
|
High media compatibility
|
High media compatibility
|
High media compatibility
|
Fully welded stainless steel
construction
|
Fully welded stainless steel
construction
|
Ceramic pressure sensor
element in stainless steel
housing
|
Very high total accuracy
|
I²C bus interface and
analogue
|
output at the same time
|
Digital signal conditioning
|
|
压力传感器芯片
供应 压力传感器芯片,基于高级电阻传感技术(STARe,
Sensor Technology for Advanced
Resistors)。该系列压力传感器芯片具有稳定性高、适用于恶劣环境的特点,广泛应用于腐蚀性、流动性、油性环境下的高精密压力传感测量,包括:汽车制造、工业、医疗、大型家电。
Type
|
Pressure range
|
min.
|
typ.
|
max.
|
Unit
|
Standard Line STARe for
pressure measurements of 1
to 30 bar
|
SL21K-100k-A/GXX
|
100 kPa
|
40
|
70
|
130
|
mV@5V
|
SL21K-250k-A/GXX
|
250 kPa
|
60
|
100
|
140
|
mV@5V
|
SL21K-500k-A/GXX
|
500 kPa
|
60
|
100
|
140
|
mV@5V
|
SL21K-01M0-A/GXX
|
1.0 MPa
|
60
|
100
|
140
|
mV@5V
|
SL21K-03M0-A/GXX
|
3.0 MPa
|
60
|
100
|
140
|
mV@5V
|
Industrial Line STARe for
pressure measurements of 100
mbar to 400 bar
|
IL20L-10k0-GXX
|
10 kPa
|
30
|
60
|
120
|
mV@5V
|
IL20L-35k0-A/GXX
|
35 kPa
|
40
|
100
|
160
|
mV@5V
|
IL20M-03M0-A/GXX
|
3.0 MPa
|
60
|
100
|
140
|
mV@5V
|
IL20M-100k-A/GXX
|
100 kPa
|
60
|
100
|
140
|
mV@5V
|
IL20M-250k-A/GXX
|
250 kPa
|
60
|
100
|
140
|
mV@5V
|
IL20M-500k-A/GXX
|
500 kPa
|
60
|
100
|
140
|
mV@5V
|
IL20M-01M0-A/GXX
|
1.0 MPa
|
60
|
100
|
140
|
mV@5V
|
IL20M-10M0-A/GXX
|
10.0 MPa
|
200
|
250
|
300
|
mV@5V
|
IL20M-40M0-AXX
|
40.0 MPa
|
230
|
290
|
350
|
mV@5V
|
High Stability Line STARe
for pressure measurements of
60 mbar to 400 bar
|
HS20V-06k0-A/G/D05
|
6 kPa
|
60
|
100
|
140
|
mV@5V
|
HS20V-10k0-A/G/D05
|
10 kPa
|
60
|
100
|
140
|
mV@5V
|
HS20L-35k0-A/G/DXX
|
35 kPa
|
60
|
100
|
140
|
mV@5V
|
HS20L-100k-A/G/DXX
|
100 kPa
|
60
|
100
|
140
|
mV@5V
|
HS20M-250k-A/G/DXX
|
250 kPa
|
60
|
100
|
140
|
mV@5V
|
HS20M-500k-A/G/DXX
|
500 kPa
|
60
|
100
|
140
|
mV@5V
|
HS20M-01M0-A/G/DXX
|
1.0 MPa
|
60
|
100
|
140
|
mV@5V
|
HS20M-03M0-A/G/XX
|
3.0 MPa
|
60
|
100
|
140
|
mV@5V
|
HS20M-10M0-A/GXX
|
10.0 MPa
|
200
|
250
|
300
|
mV@5V
|
HS20M-20M0-A08
|
20.0 MPa
|
60
|
100
|
140
|
mV@5V
|
HS20M-40M0-A08
|
40.0 MPa
|
60
|
100
|
140
|
mV@5V
|
Harsh Environmental Line for
pressure measurements of 2
bar to 16 bar
|
HE11C-200K-AXX
|
200 kPa
|
60
|
100
|
140
|
mV@5V
|
HE11C-400K-AXX
|
400 kPa
|
60
|
100
|
140
|
mV@5V
|
HE11C-800K-AXX
|
800 kPa
|
60
|
100
|
140
|
mV@5V
|
HE11C-01M6-AXX
|
1.6 MPa
|
60
|
100
|
140
|
mV@5V
|
|
压力传感器模块
供应 压力传感器模块,具有极高的长期稳定性、极低的压力与温度滞后、适用于高静态压力、快速响应、高电阻的特点。该系列压力传感器模块广泛应用于,包括:工业、医学领域。
Type
|
Pressure range
|
min.
|
typ.
|
max.
|
Unit
|
K-Serie STARe A/G for
absolute and
relative pressure
requirements
|
K10-HS20V-06k0-A/GXX
|
6 kPa
|
60
|
100
|
140
|
mV@5V
|
K10-HS20V-10k0-A/GXX
|
10 kPa
|
60
|
100
|
140
|
mV@5V
|
K10-HS20L-35k0-A/GXX
|
35 kPa
|
60
|
100
|
140
|
mV@5V
|
K10-HS20L-100k-A/GXX
|
100 kPa
|
60
|
100
|
140
|
mV@5V
|
K10-HS20M-250k-A/GXX
|
250 kPa
|
60
|
100
|
140
|
mV@5V
|
K10-HS20M-500k-A/GXX
|
500 kPa
|
60
|
100
|
140
|
mV@5V
|
K10-HS20M-01M0-A/GXX
|
1.0 MPa
|
60
|
100
|
140
|
mV@5V
|
K10-HS20M-03M0-A/GXX
|
3.0 MPa
|
60
|
100
|
140
|
mV@5V
|
K10-HS20M-10M0-A/GXX
|
10.0 MPa
|
200
|
250
|
300
|
mV@5V
|
K10-HS20M-20M0-A08
|
20.0 MPa
|
60
|
100
|
140
|
mV@5V
|
K10-HS20M-40M0-A08
|
40.0 MPa
|
60
|
100
|
140
|
mV@5V
|
K-Series STARe D for
differential pressure
requirements
|
K10-HS20V-06k0-DXX
|
6 kPa
|
60
|
100
|
140
|
mV@5V
|
K10-HS20L-10k0-DXX
|
10 kPa
|
60
|
100
|
140
|
mV@5V
|
K10-HS20L-35k0-DXX
|
35 kPa
|
60
|
100
|
140
|
mV@5V
|
K10-HS20L-100k-DXX
|
100 kPa
|
60
|
100
|
140
|
mV@5V
|
K10-HS20M-250k-DXX
|
250 kPa
|
60
|
100
|
140
|
mV@5V
|
K10-HS20M-500k-DXX
|
500 kPa
|
60
|
100
|
140
|
mV@5V
|
K10-HS20M-01M0-DXX
|
1.0 MPa
|
60
|
100
|
140
|
mV@5V
|
|
Products
Contact us to find the perfect
sensor solution for your
specific application. We will be
happy to develop sensors or
systems to suit your individual
requirements.
Detectors
First Sensor offers a wide range of
photodiodes with high sensitivity, high
speed and low dark currents.
Our detectors are optimized for
ultraviolet, visible and
ionizing radiation and can be
combined with SMD (surface mount
device), THD (through hole
device) and TO (metal cans)
housing technologies.
|
我们将为您提供高端光学元件及应用解决方案。我们的产品应用多种领域, 包括光源, 光电二极管, 雪崩二极管, 激光二极管, CCD和CMOS,
摄像镜头, 光学元件, 电子元件等. 可广泛应用于教学, 科研,
产品开发及规模生产。 我们在专业领域有长足经验,以卓越的生产商和强大的技术支持为后盾, 致力于提供高端国际品质的产品和服务;我们期待与您精诚合作,
开发迅速成长的中国乃至全世界的光电子产业,欢迎与我们联系。
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