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、产品分类介绍:  

A、射频微波元器件

->射频模块/功率管
->
频管
/高频/微波管
->
混频器
->
放大器
->
衰减器
->
双工器
->
功分器
->
隔离器
->开关/射频微波开关
->
低噪声管
->
温补晶振
/晶体振荡器
->
负载电阻
->
PIN二极管
->
PLL锁相环
->
通信IC
->
介质滤波器
->
声表滤波器
/SAW
->
混合耦合器
->
高频微波电容
->
高频微波电感

->特价库存微波元件

->电源系统专用元件

->高频功放模块

->特殊专用元件

->高频三极管

->无线电发射专用管发射管

->高频场效应管

->GaAs微波功率晶体管

->MOS双极性晶体管

->微波毫米波振荡器

->频率源/频率综合器

->倍频器/倍频器模块

->MMIC混频器

  同轴和波导混频器

->MMIC移相器及移相器模块

->MMIC功率放大器低噪放

->对数检波视频放大器

->MMIC KU到KA收发器

->MMIC开关及模块

->同轴及波导负载部件

->MMIC同轴及波导衰减器

->同轴定向耦合器部件

->适配器转换

->速调管、行波管检波器

->波导部件和旋转关节

->功分器合路器双工器

->毫米波测试设备

->限幅器

->高功率倍增器

->射频连接/接插/线缆

->射频微波材料

->军品高精度晶体振荡器

-> 通信专用元器件

-> 电子管/真空管/闸流管

-> FREESCALE/MOTOROLA

-> ERICSSON爱立信系列

-> NXP/PHILIPS飞利浦系列

-> TOSHIBA东芝系列

-> MITSUBISHI/RENESAS

-> M/A-COM系列

-> ASI系列

-> EUDYNA/FUJITSU富士通

-> HP/AGILENT/Avago

-> NEC日电系列

-> HITACHI/RENESAS日立

-> SONY索尼系列
->
UMS

-> Mini-circuits

-> SIRENZA

-> ALPHA

->  WJ

-> RFMD

-> APT

-> HITTITE

-> ST意法半导体

-> QUALCOMM高通

-> PDI

-> CML

 

B、光通讯元器件

->光电通讯元器件

->光耦/光电耦合器

->Agilent光模块

->AMP光模块

->SIEMENS光纤收发模块

->OCP光纤收发模块

->CISCO光纤收发模块

->GBIC光纤收发模块

->光纤收发

->常用光电元器件库存

 

C、二极管、三极管

->二极管/变容管/变阻管

->三极管/晶闸管/场效应管

->2SJ系列电子器件

D、无线收发、无线射频IC

E、无线收发模块

F、GSM/CDMA/GPRS通信模块

G、GPS模块/天线/方案

H、扩频模块/MODEM模块

I、遥控器/遥控开关/模块

J、通信继电器/干簧管

K、电源模块/模块电源

L、通信变压器

M、通信防雷器/TVS管

N、无线收发芯片和模组

O、数据通信芯片

 

二、产品图文介绍:

 
 
 
 
 
 
 

 

商运达微波光电部全方位提供各类国外先进的微波产品,从半导体元器件到系统,从无源器件到有源器件,从电缆到波导产品,从微波到毫米波产品,可以满足用户不同的需求。为了适应新形势的要求,同时随着进出口业务的简化,为了更好地服务新老客户,商运达微波光电部以全新的理念和方法满足用户要求。为了达到此目的,我们的主要做法就是尽可能多地代理国外公司的产品,让我们的用户得到与国外客户同等的价格,同样的服务。我们公司的主要利润将不再来自我们的客户,而是来自于供货商。越来越多的国外供货商正在加入我们供货商的行列。
我们的价格:我们独家代理之公司的产品,您的价格就是我们的进价。
我们的服务:我们独家代理之公司的产品,您得到的是生产厂家直接的服务。
我们的理念:让越来越多的用户享受与国外客户同等的价格与服务。

其前身为美国Stanford公司,其产品包括:增益模块、低噪声放大器中功率放大器、功率晶体管、低噪声晶体管中功率晶体管、收发多功能射频集成电路、Varil的军用及民用压控振荡器、锁相环、功分器、耦合器、宽带混频器等、Xemod LDMOS、功率塻块等(SERENZA详细产品资料/应用资料下载
 

Broadband HBT MMICs with high gain and high output for wireless and broadband communications applications. Reduced junction temperatures achieve high MTTF.
MHz
dBm
dBm
dB
dB
V
mA
DC-5000
18.7
33.7
13.8
4.8
4.9
80.0
DC-5000
18.7
33.5
14.5
4.8
4.9
80.0
DC-5000
19.4
34.7
16.9
4.4
4.9
80.0
DC-5000
19.3
34.1
17.9
4.5
4.9
80.0
DC-8000
19.4
34.0
19.6
3.9
4.9
80.0
Typical Performance @ 1950 MHz

 
SGA Series
Silicon Germanium (SiGe) offers benefits not attainable by conventional silicon bipolar technologies. The SGA product family offers lower power consumption, high output power at high efficiency, high integration levels, at lower costs.
MHz
dBm
dBm
dB
dB
V
mA
DC-4500
-1.8
9.4
12.7
4.7
2.1
8.0
DC-5000
2.3
14.2
19.6
3.0
2.5
11.0
DC-6000
-3.3
7.9
11.5
3.1
4.6
12.0
DC-4000
-7.8
2.6
15.7
2.7
2.8
8.0
DC-5000
7.1
21.0
10.5
4.1
2.2
20.0
DC-5000
7.5
20.0
10.2
4.3
2.2
20.0
DC-5000
7.5
20.2
14.7
3.2
2.2
20.0
DC-5000
8.3
20.0
15.0
3.2
2.2
20.0
DC-5000
8.2
19.4
17.5
2.9
2.7
20.0
DC-5000
8.5
20.5
17.2
2.9
2.7
20.0
DC-5000
8.0
20.1
20.0
2.6
2.7
20.0
DC-5000
8.4
20.0
19.8
2.7
2.7
20.0
DC-5500
11.6
26.2
15.0
3.6
2.6
35.0
DC-5000
12.2
25.5
14.5
3.7
2.6
35.0
DC-3500
11.6
25.4
17.5
2.9
2.6
35.0
DC-5000
12.3
24.3
17.0
3.2
2.6
35.0
DC-5000
11.3
24.0
21.5
2.5
2.9
35.0
DC-5000
12.7
24.6
21.0
2.8
2.9
35.0
DC-5000
12.9
24.0
26.1
2.3
3.2
35.0
DC-500
13.5
25.0
25.0
2.5
3.3
35.0
DC-5000
13.0
29.7
10.5
4.8
3.2
45.0
DC-5000
14.6
28.3
10.0
4.7
3.2
45.0
DC-3500
14.2
29.3
14.0
3.4
3.2
45.0
DC-5000
15.0
29.1
13.5
3.7
3.2
45.0
DC-4000
14.3
28.7
17.5
2.7
3.2
45.0
DC-4500
15.3
28.9
17.0
2.9
3.2
45.0
DC-3500
14.0
27.0
19.0
2.5
3.2
45.0
DC-4500
15.4
28.2
18.5
2.7
3.2
45.0
DC-2500
15.0
27.1
20.2
1.9
3.6
45.0
DC-4000
16.5
28.6
17.9
1.7
3.6
45.0
DC-4500
16.3
32.5
13.3
4.0
3.4
60.0
DC-5000
17.0
31.0
13.5
4.1
3.5
60.0
DC-5000
15.8
31.8
13.4
4.2
3.5
60.0
DC-5000
17.0
32.0
16.6
3.5
3.6
60.0
DC-4500
16.3
31.5
16.4
3.3
3.6
60.0
DC-3500
17.0
32.0
18.8
3.1
3.5
60.0
DC-4000
16.0
30.8
19.7
2.8
3.3
60.0
DC-4000
18.1
31.6
23.1
2.5
3.9
60.0
DC-4000
18.2
32.9
24.0
3.0
3.9
60.0
DC-5500
18.7
35.0
13.6
3.9
4.0
75.0
DC-5400
18.1
34.4
13.9
3.7
4.0
75.0
DC-5000
21.0
35.3
15.4
3.6
4.9
80.0
DC-4500
20.2
35.2
15.5
3.8
4.9
80.0
DC-4500
20.2
35.0
19.7
3.0
5.1
75.0
DC-3500
20.7
34.0
20.1
2.7
5.1
75.0
DC-4000
21.5
33.8
23.8
2.7
5.0
80.0
DC-3500
21.5
32.5
25.5
2.5
4.9
80.0
DC-3000
22.4
35.5
21.5
2.8
5.0
115.0
Typical Performance @ 850 MHz

 
SGB Series
The SGB product family consists of low cost, high performance SiGe HBT MMIC amplifiers in a Darlington configuration with an active bias network. Each part is designed to run directly from a 5v supply, eliminating the need for a drop resistor.
GHz
dBm
dBm
dB
dB
V
mA
DC-4.5
6.7
19.0
12.9
4.2
3.0
25
DC-4.0*
6.9
18.0
17.2
3.5
3.0
25
DC-3.0
10.0
22.5
14.5
4.0
3.0
56
DC-3.0
9.8
23.5
18.5
3.6
3.0
56
DC-3.5
18.3
31.5
16.0
4.1
5.0
88
DC-3.0
18.4
32.0
18.3
3.7
5.0
88
Typical Performance @ 1950 MHz
* Usable to 6 GHz with External Match

 
SNA Series
Sirenza Microdevices SNA series are broadband GaAs HBT (Gallium Arsenide Heterojunction Bipolar Transistor) monolithic microwave integrated circuits (MMICs) housed in low-cost surface-mountable plastic and ceramic packages. These amplifiers provides high output intercept point, high gain, low noise figure and low power consumption
MHz
dBm
dBm
dB
dB
V
mA
DC-8000
13.0
26.0
12.0
6.0
4.0
50.0
DC-8000
13.0
26.0
12.5
6.0
3.8
50.0
DC-6000
14.0
27.0
12.8
5.5
4.0
50.0
DC-6000
14.0
29.0
15.5
5.7
3.8
50.0
DC-3000
10.0
23.0
23.0
4.0
4.0
35.0
DC-3000
10.0
23.0
20.0
4.0
3.7
35.0
DC-6500
17.5
30.9
13.6
5.0
5.0
65.0
DC-5000
18.4
31.6
18.1
4.0
4.9
65.0
DC-6000
17.7
32.1
11.2
7.3
5.3
65.0
Typical Performance @ 1950 MHz

 
SNA Series
The SNA product family is also available in chip form in 100 pc gel packs. Their small size and gold metallization make them an ideal choice for use in hybrid circuits.
MHz
dBm
dBm
dB
dB
V
mA
DC-10000
13.0
26.0
12.0
5.0
3.8
50
DC-10000
11.0
24.0
12.2
5.0
3.6
40
DC-6500
14.0
27.0
15.5
5.5
3.8
50
DC-6500
12.0
25.0
15.0
5.5
3.6
40
DC-3000
10.0
23.0
22.0
4.0
3.7
35
DC-8000
17.5
30.9
13.6
5.0
4.9
65
DC-3000
18.4
31.6
18.1
4.0
4.8
65
DC-6500
17.7
32.1
11.2
7.3
5.4
65
Typical Performance @ 1950 MHz
Sirenza Microdevices low cost, SiGe amplifiers provide low noise and low power consumption. These products are suitable for wireless infrastructure equipment and ISM applications.
GHz
dBm
dBm
dB
dB
V
mA
SGL-0163
300-1300
300-1300
300-1300
5.01
11.51
5.02
3.51
7.81
6.42
21.01
22.11
15.02
1.21
2.01
1.12
3.0
4.0
3.0
11.0
23.0
11.0
SGL-0263
1400-2500
6.03
10.63
11.43
1.83
3.0
11.0
1 - Performance data @ 433MHz
2 - Performance data @ 900MHz
3 - Performance data @ 2400MHz


 
SLX Series
Sirenza Microdevices LNA pHEMT module offers high linearity and a very low noise figure. This module is self-biased and operates from a single supply.
MHz
dBm
dBm
dB
dB
V
mA
SLX-2143
1700-2200
20.0
34.0
15.0
1.1
5.0
105.0
STA Series
Sirenza Microdevices STA-5063 is an InGaP HBT (Heterojunction Bipolar Transistor) amplifier housed in low-cost surface-mount SOT-363 package. This amplifier is specifically designed as a driver amplifier for 5.8 GHz WLAN and ISM applications. On-chip impedance matching provides 50 ohm nominal RF input and output
GHz
dBm
dBm
dB
dB
V
mA
STA-5063
4.8-6.2
15.0
27.01
14.0
8.5
3.3
51
1 - Typical Performance at 5.8 GHz
 
SX Series
Sirenza Microdevices SX series are GaAs HBT (Gallium Arsenide Heterojunction Bipolar) amplifiers housed in low-cost surface-mountable packages. These amplifiers provides high gain, high output intercept point, low noise figure and low power consumption. These amplifiers are specially designed for use as driver devices for infrastructure equipment in the 50-2500 MHz cellular, ISM and narrowband PCS bands. Their high linearity performance make them an ideal choice for multi-carrier as well as digital applications.
 
MHz
dBm
dBm
dB
dB
V
mA
SXA-3318B
400-2500
28.0
47.01
17.51
5.51
5.0
240
SXB-4089
400-2500
27.5
45.01
19.51
4.81
5.0
270
SXA-389B3
400-2500
25.01
42.01
18.41
5.01
5.0
120
SXA-389
400-2500
25.01
42.01
19.01
5.51
5.0
105
SXA-289
5-2000
24.01
42.01
15.5
5.01
5.0
105
SXT-289
1800-2500
22.92
41.02
15.12
5.02
5.0
110
1 - Data measured at 900MHz and is typical of device performance.
2 - Data measured at 2150MHz and is typical of device performance.
3 - SXA-389B and SXA-3318B provide lower thermal resistance.
 

SGA Series
Sirenza Microdevices SGA-8 and SGA-9 series are low-cost, high-performance SiGe HBT transistors that use off-chip matching for maximum flexibility. The SGA-8 series features low noise with NFmin as low as 0.9dB. It also offers high gain and excellent linearity at low DC powers. The SGA-9 series is for higher powered applications with linearity requirements up to +42.0dBm OIP3.
 
MHz
dBm
dBm
dB
dB
V
mA
DC-6000
13.0
28.5
17.5
1.1
3.0
20.0
DC-6000
13.0
28.5
17.5
1.1
3.0
20.0
Data measured at 2GHz and is typical
1 - P1dB and IP3 results specified with the device matched to Zs=Zsopt, Zl=Zlopt
2 - NFopt and Gain are specified Zs=Zsopt, Zl=Zlopt at 3V, 10mA

 
SPF Series
Sirenza Microdevices SPF series are ultra-low noise Pseudomorphic High Electronic Mobility Transistor (pHEMT) FETs, packaged in low parasitic, plastic surface mountable packages and offered in chip form. The SPF series features low noise figure with NFmin as low as 0.5dB at 2GHz. The ultra-linear performance makes these FETs ideally suited for both LNAs and/or low power driver amps.
 
 
MHz
dBm
dBm
dB
dB
V
mA
DC-12000
20.0
32.0
17.7
0.5
5.0
40.0
DC-12000
20.0
32.0
12.2
0.7
5.0
40.0
DC-6000
20.0
32.0
17.8
0.4
5.0
40.0
DC-10000
15.5
29.0
18.0
0.5
3.0
20.0
DC-3500
15.0
29.0
14.5
0.50
3.0
20.0
DC-3500
17.7
31.0
15.1
0.58
5.0
40.0
1 - Data measured at 2GHz and is typical.
2 - Data measured at 6GHz and is typical
SGA Series
Sirenza Microdevices SGA-8 and SGA-9 series are low-cost, high-performance SiGe HBT transistors that use off-chip matching for maximum flexibility. The SGA-8 series features low noise with NFmin as low as 0.9dB. It also offers high gain and excellent linearity at low DC powers. The SGA-9 series is for higher powered applications with linearity requirements up to +42.0dBm OIP3.
MHz
dBm
dBm
dB
dB
V
mA
DC-3.5
26.0
39.0
20.5
-
5.0
180.0
DC-3.5
29.0
41.5
20.6
-
5.0
340.0
1 - Gmax @ 900 MHz
2 - 13.2 dB Gmax @ 1.9 GHz
3 - 13.1 dB Gmax @ 1.9 GHz
 
SHF Series
Sirenza Microdevices' SHF series are AIGaAs/GaAs FET power amplifiers, packaged in low-cost plastic surface-mountable packages. When properly matched, these transistors provid out power levels from +27dBm at 2 GHz to +33dBm at 3 GHz. With ultra-linear performance, these power FETs are ideal for subscriber products and/or driving higher power amplifiers.
 
 
 
MHz
dBm
dBm
dB
dB
V
mA
50-12000
27.0
40.0
18.5
3.1
8.0
100.0
50-6000
28.0
40.0
18.5
3.1
8.0
100.0
50-6000
27.0
40.0
18.5
4.7
8.0
100.0
50-6000
30.0
43.0
19.0
3.2
7.0
200.0
50-3000
33.0
46.0
16.5
3.6
7.0
345.0
Typical Performance Data @900 MHz
 

 

 

 

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西安分公司:西安高新开发区20(中国电子科技集团导航技术研究所

           西安劳动南路88号电子商城二楼D23 

TEL4006572198  13072977981  FAX:029-88789382