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13PD55-S
Application:
High Speed InGaAs p-i-n Photodiode

Description:
The 13PD55-S, an InGaAs photodiode with a 55µm-diameter photosensitive region and mounted on a metallized ceramic substrate, is intended for high speed and low noise applications in telecommunications and data communications systems. Planar semiconductor design and dielectric passivation provide very low noise performance. Reliability is assured by 100% purge burn-in (200°C, 15 hours, Vr = 20V). Chips can also be attached and wire bonded to customer-supplied or other specified submounts.

13PD55-S

Features:

  • Planar Structure
  • Dielectric Passivation
  • 100% Purge Burn-in
  • High Responsivity

    • Specifications
    Operating Voltage Max -30
    Dark Current nA Typ 0.05
    Dark Current nA Max 2
    Capacitance pF Typ 0.3
    Capacitance pF Max 0.5
    Responsivity A/W Min 0.8
    Responsivity A/W Typ 0.9
    Rise/Fall ns Max 0.5
    Frequency Response GHz Typ 0.4
    Backreflection (STD) dB Typ -
    Backreflection (-LBR) dB Typ -