|
Application:
High Speed InGaAs p-i-n Photodiode
Description:
The 13PD75-TO, an InGaAs photodiode with a 75µm-diameter
photosensitive region packaged in a TO-46 header, is intended
for high speed and low noise applications. The diameter of
the photosensitive region is sufficiently small to enable
operation at low dark current and low capacitance and yet
large enough to allow efficient coupling to multi-mode fiber.
Planar semiconductor design and dielectric passivation provide
very low noise performance. Reliability is assured by hermetic
sealing and 100% purge burn-in (200°C, 15 hours, Vr =
20V). Headers are available with either a lensed or flat window
cap. Chips can also be attached and wire bonded to customer-supplied
or other specified packages.
Features:
Planar Structure
Dielectric Passivation
100% Purge Burn-in
High Responsivity
|
Related Information
Other information:
 |
Custom packaging is also available. |
|
|
| Operating Voltage Max |
-20
|
| Dark Current nA Typ |
0.2
|
| Dark Current nA Max |
2
|
| Capacitance pF Typ |
0.7
|
| Capacitance pF Max |
0.9
|
| Responsivity A/W Min |
0.8
|
| Responsivity A/W Typ |
0.9
|
| Rise/Fall ns Max |
0.5
|
| Frequency Response GHz Typ |
1.5
|
| Backreflection (STD) dB Typ |
-
|
| Backreflection (-LBR) dB Typ |
-
|
|
