Application:
High Speed InGaAs p-i-n Photodiode
Description:
The 13PD75LDC-TO, an InGaAs photodiode with a 75µm-diameter
photosensitive region packaged in a TO-46 header, is a low-dark-current
version of the 13PD75 intended for high speed and low noise
applications. The diameter of the photosensitive region is
sufficiently small to enable operation at low dark current
and low capacitance while large enough to allow efficient
coupling to multi-mode fiber. Planar semiconductor design
and dielectric passivation provide very low noise performance.
Reliability is assured by hermetic sealing and 100% purge
burn-in (200°C, 15 hours, Vr = 20V). Headers are available
with either a lensed or flat window cap. Chips can also be
attached and wire bonded to customer-supplied or other specified
packages.
Features:
Planar Structure
Dielectric Passivation
100% Purge Burn-in
High Responsivity
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Related Information
Other information:
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Custom packaging is also available. |
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| Operating Voltage Max |
-20
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| Dark Current nA Typ |
-
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| Dark Current nA Max |
0.11
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| Capacitance pF Typ |
0.7
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| Capacitance pF Max |
0.9
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| Responsivity A/W Min |
0.8
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| Responsivity A/W Typ |
0.9
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| Rise/Fall ns Max |
0.5
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| Frequency Response GHz Typ |
1.5
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| Backreflection (STD) dB Typ |
-
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| Backreflection (-LBR) dB Typ |
-
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