Application:
All Purpose InGaAs p-i-n Photodiode
Description:
The 35PD300-FC, an InGaAs photodiode with a 300µm-diameter
photosensitive region packaged in a TO-46 header and actively
aligned in a FC active device mount. This device is one of
Telcom Devices' most versatile optoelectronic components designed
for applications in high sensitivity instrumentation, and
moderate-bit-rate fiberoptic communications. Planar semiconductor
design and dielectric passivation provide superior performance.
Reliability is assured by hermetic sealing and 100% purge
burn-in (200°C, 15 hours, Vr = 20V). Devices with enhanced
responsivity at 850nm are available.
Features:
Planar Structure
Dielectric Passivation
100% Purge Burn-in
High Responsivity
|
| Operating Voltage Max |
-15
|
| Dark Current nA Typ |
1
|
| Dark Current nA Max |
10
|
| Capacitance pF Typ |
4
|
| Capacitance pF Max |
12
|
| Responsivity A/W Min |
0.7
|
| Responsivity A/W Typ |
0.9
|
| Rise/Fall ns Max |
3
|
| Frequency Response GHz Typ |
300
|
| Backreflection (STD) dB Typ |
-
|
| Backreflection (-LBR) dB Typ |
-
|
|
