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35PD300-S
Application:
All Purpose InGaAs p-i-n Photodiode

Description:
The 35PD300-S, an InGaAs photodiode with a 300µm-diameter photosensitive region mounted on a metallized ceramic substrate. This device is one of Telcom Devices' most versatile optoelectronic components, with applications in high sensitivity instrumentation, laser back-facet monitoring, and moderate-bit-rate telecomm and datacomm transmission. Planar semiconductor design and dielectric passivation provide superior noise performance. Reliability is assured by 100% purge burn-in ( 200°C, 15 hours, Vr = 20V ). Chips can also be attached and wire bonded to customer-supplied or other specified submounts.

35PD300-S

Features:

  • Planar Structure
  • Dielectric Passivation
  • 100% Purge Burn-in
  • High Responsivity

    Related Information

    Other information:

    Custom packaging is also available.

    • Specifications
    Operating Voltage Max -15
    Dark Current nA Typ -
    Dark Current nA Max 0.51
    Capacitance pF Typ 4
    Capacitance pF Max 12
    Responsivity A/W Min 0.7
    Responsivity A/W Typ 0.9
    Rise/Fall ns Max 3
    Frequency Response GHz Typ -
    Backreflection (STD) dB Typ -
    Backreflection (-LBR) dB Typ -