Application:
All Purpose InGaAs p-i-n Photodiode
Description:
The 35PD300LDC-TO, an InGaAs photodiode with a 300µm-diameter
photosensitive region packaged in a TO-46 header, is a low-dark-current
version of the 35PD300. This device is one of Telcom Devices'
most versatile optoelectronic components, with applications
in high sensitivity instrumentation, laser back-facet monitoring,
and moderate-bit-rate telecomm and datacomm transmission.
Planar semiconductor design and dielectric passivation provide
superior noise performance. Reliability is assured by hermetic
sealing and 100% purge burn-in (200°C, 15 hours, Vr =
20V). Headers are available with either a lensed or flat window
cap. Chips can also be attached and wire bonded to customer-supplied
or other specified packages.
Features:
Planar Structure
Dielectric Passivation
100% Purge Burn-in
High Responsivity
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Related Information
Other information:
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Custom packaging is also available. |
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| Operating Voltage Max |
-15
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| Dark Current nA Typ |
-
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| Dark Current nA Max |
0.51
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| Capacitance pF Typ |
4
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| Capacitance pF Max |
12
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| Responsivity A/W Min |
0.7
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| Responsivity A/W Typ |
0.9
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| Rise/Fall ns Max |
3
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| Frequency Response GHz Typ |
-
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| Backreflection (STD) dB Typ |
-
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| Backreflection (-LBR) dB Typ |
-
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