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35PD500-TO
Application:
Large Area InGaAs p-i-n Photodiode

Description:
The 35PD500-TO, an InGaAs photodiode with a 500µm-diameter photosensitive packaged in a TO-46 header, is a versatile device with applications in high sensitivity instrumentation, laser back-facet monitoring, and low-bit-rate telecomm and datacomm transmission. Planar semiconductor design and dielectric passivation provide superior noise performance. Reliability is assured by 100% purge burn-in (200°C, 15 hours, Vr = 20V). Chips can also be attached and wire bonded to customer-supplied or other specified packages.

35PD500-TO

Features:

  • Planar Structure
  • Dielectric Passivation
  • 100% Purge Burn-in
  • High Responsivity

    Related Information

    Other information:

    Custom packaging is also available.

    • Specifications
    Operating Voltage Max -10
    Dark Current -0.3V Typ -
    Responsivity 1300nm A/W Typ 0.8
    Responsivity 1550nm ns Typ 1
    Rise/Fall Typ 3
    Dynamic Impedance Class A Typ -
    Dynamic Impedance Class B Typ -