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Hewlett-Packard manufactures innovative radio frequency (RF) semiconductors and assemblies for the communications
marketplace. Combining HP's technology leadership
with the appropriate choice of silicon or GaAs processes, our engineers create semiconductors that achieve the highest value
to the customer, packaged in the smallest size surface mount packages on the market. Our world-wide manufacturing
facilities allow us to produce products with HP's proven quality, in high volumes, and at competitive prices. These include:
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 Schottky and PIN diodes
including surface mount devices for detector, clamping, mixer,
switch, limiter, and attenuator applications, as well as high
performance devices such as microwave beam lead and low flicker
noise diodes as well as millimeter wave detector diodes.
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 Silicon bipolar transistors for operation to past 4 GHz
including high performance 3 V devices, general purpose small
signal transistors, and power devices to several watts
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 GaAs FETs and PHEMTs for operation to past 18 GHz
for ultra low noise figures and performance through microwave
frequencies
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 Silicon and GaAs based IC amplifiers
including new ultra-miniature 3 and 5 volt ICs for wireless
communications applications and the MODAMP line of 50 ohm gain
blocks, as well as driver amplifiers, variable gain amplifiers,
and millimeter wave amplifiers.
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 Silicon and GaAs based RFICs
including active mixers, vector modulators, switches,
prescalers, multi-function ICs, and chip sets.
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 Hybrid Assemblies
including digital radio modules and voltage controlled oscillators
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Index