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GaAs FETs have excellent switching properties, and so can form the basis for MMIC switches. The usual configuration has both series and shunt FETs in each leg, resulting in good isolation in a small package. Virtually no current is required for operation; however a negative voltage is typically required to actuate the switching. In absorptive switches, the "off" port is terminated to protect any potentially unstable device connected to this port. Reflective switches provide less insertion loss by leaving the "off" port unterminated.
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Products |
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HMMC-2006: Reflective SPDT switch chip for use to 6 GHz |
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HMMC-2007: Absorptive SPDT switch chip for use to 8 GHz |
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HMMC-2027: Absorptive SPDT switch chip for use to 26.5 GHz |
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HPMX-3003 LNA /Switch /PA chip for 1.5 - 2.5 GHz FHSS chip set |
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Key Parameters |
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Bandwidth, insertion loss, isolation, VSWR, power handling capability |
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Alternatives |
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1. PIN diodes offer a lower distortion switch, typically at a lower cost. |
