5V, 5mA, 900 MHz: NF = 1.0 dB, Ga = 15.5 dB
5V, 25mA, 900 MHz: P1dB = +14.5 dBm, G1dB = 17.5 dB
packages: 11 32 33 86
SPICE model
* DIE MODEL (excludes bond wires)
.SUBCKT AT415 75 20 85
CBBP 20 75 .064PF; BASE BOND PAD CAPACITANCE
CEBP 85 75 .064PF; EMITTER BOND PAD CAPACITANCE
QINT 75 20 85 Q415
.ENDS
.MODEL Q415 NPN (BF=100, BR=2.5, IS=4.2E-16, VA=20,
+ TF=12PS, CJE=6E-13, VJE=1.01, MJE=0.6,
+ PTF=25, XTB=1.818, VTF=6, ITF=7.6E-2,
+ IKF=3.4E-2, XTF=4, NF=1.03, ISE=1.3E-12,
+ NE=2.5, RB=11.57, RE=0.4, RC=18.03,
+ CJC=2.5E-13, CJS=2.3E-13, XCJC=0.20,
+ PS=0.8, MS=0.5, PC=0.76, MC=0.53)
To complete the transistor model, the above die model must be combined with one of the following package models.
AT-41532 |
file name | description | |
t415321a.s2p | AT-41532 s and noise parameters at 1V 1 mA | view |
t415323b.s2p | AT-41532 s and noise parameters at 2.7V 2 mA | view |
t415323c.s2p | AT-41532 s parameters at 2.7V 5 mA | view |
t415323d.s2p | AT-41532 s parameters at 2.7V 10 mA | view |
t415325b.s2p | AT-41532 s and noise parameters at 5V 2 mA | view |
t415325c.s2p | AT-41532 s and noise parameters at 5V 5 mA | view |
t415325d.s2p | AT-41532 s parameters at 5V 10 mA | view |
AT-41586 |
file name | description | |
t415868a.s2p | AT-41586 s and noise parameters at 8V 10 mA | view |
t415868b.s2p | AT-41586 s parameters at 8V 25 mA | view |
Applications Literature |
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General Information about Bipolar Junction Transistors
Information about AT-4 Series Transistors
Assembly Information
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