16 V, 110 mA, 2 GHz: P1dB = +28 dBm, G1dB = 10 dB
packages: 20 23
SPICE model
* DIE MODEL (excludes bond wires)
.SUBCKT AT640 75 20 85
CCB 20 60 .082PF
DCD1 20 60 DMOD 2287
RRB1 20 25 1.0 TC=0.8E-3
DCD2 25 60 DMOD 4692
RRB2 25 30 3.1 TC=1.2E-3
DCD3 30 60 DMOD 1360
RRB3 30 35 0.98 TC=1.8E-3
RRC 60 75 1.3 TC=0.6E-3
RRE 80 85 .06 TC=0.6E-3
CCE 60 85 .108PF
QINT 60 35 80 QPWR 1560
.ENDS
.MODEL DMOD D(IS=1E-25, CJO=2.45E-16, VJ=.76, M=.53,
+ BV=45, IBV=1E-9)
.MODEL QPWR NPN (BF=100, BR=5, IS=1.65E-18, VA=20,
+ TF=12PS, CJE=1.8E-15, VJE=1.01, MJE=0.6,
+ PTF=35, XTB=1.818, VTF=6, ITF=3E-4, IKF=1E-4,
+ XTF=4, NF=1.03, ISE=5E-15, NE=2.5)
To complete the transistor model, the above die model must be combined with one of the following package models.
|
file name | description | |
t640200a.s2p | AT-64020 s parameters at 16 V 110 mA | view |
t640230a.s2p | AT-64023 s parameters at 16 V 110 mA | view |
t640230b.s2p | AT-64023 s parameters at 10 V 150 mA | view |
t640230c.s2p | AT-64023 s parameters at 10 V 110 mA | view |
t640230d.s2p | AT-64023 s parameters at 10 V 70 mA | view |
Applications Literature |
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General Information about Bipolar Junction Transistors
Assembly Information
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