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ATF-36 Series
200 micron premium performance ultra low noise PHEMT

Vds = 1.5 V, Ids = 10 mA
12 GHz: NF = 0.5 dB, Ga = 12 dBm

part number use NF
@12 GHz
[ dB ]
Ga
@12 GHz
[ dB ]
package outline data sheet FAX
space
ATF-36077 1st stg 0.6 max
0.5 typ
11.0 min
12.0 typ
70 mil
ceramic
pkg dwg pdf
pdf
button
55882
space
ATF-36163 2nd or
3rd stg
1.4 max
1.1 typ
9.0 min
10.0 typ
SOT-363
(SC-70)
pkg dwg pdf
pdf
button
10874
space
2nd stg at 4 GHz
0.65 typ
at 4 GHz
15.0 typ

packages: 63 77


Model

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ATF-36 FET chip Statz model parameters for small signal operation.


MODEL=FET

IDS model	Gate model	Parasitics	
NFET=yes	DELTA=0.2	RG=1		
PFET=		GSCAP=3		RD=0.5		
IDSMOD=3	CGS=0.13 pF	RS=0.5		
VTO=-0.55	GDCAP=3		LG=0.03 nH	
BETA=0.10	CGD=0.04 pF	LD=0.04 nH	
LAMBDA=0.25	LS=0.01 nH	IS=1 nA	
ALPHA=5.0	CDS=0.05 pF	IR=1 nA	
B=1.5		CRF=0.1		IMAX=0.1	
TNOM=27		RC=350		XTI=	
IDSTC=		N=	
VBI=0.7		EG=

Breakdown	Noise
GSFWD=1		FNC=01e+6
GSREV=0		R=0.17
GDFWD=1		P=0.55
GDREV=0		C=0.2
VJR=1

ATF-36 Series S Parameter Data

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file name description
f360772a.s2p

ATF-36077 s and noise parameters at 1.5 V, 10 mA

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f361630o.s2pATF-36163 s and noise parameters at 0 V, 0 mA
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f361631a.s2pATF-36163 s and noise parameters at 1.5 V, 10 mA
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f361631b.s2pATF-36163 s and noise parameters at 1.5 V, 15 mA
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f361632b.s2pATF-36163 s and noise parameters at 2 V, 15 mA
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Applications Literature

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General Information about GaAs FETs
Information about AF-36 Series Transistors
Assembly Information

 
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