Vds = 1.5 V, Ids = 10 mA
12 GHz: NF = 0.5 dB, Ga = 12 dBm
part number |
use |
NF @12 GHz [ dB ] |
Ga @12 GHz [ dB ] |
package |
outline |
data sheet |
FAX |
|
ATF-36077 |
1st stg |
0.6 max 0.5 typ |
11.0 min 12.0 typ |
70 mil ceramic |
|
pdf |
55882 |
|
ATF-36163 |
2nd or 3rd stg |
1.4 max 1.1 typ |
9.0 min 10.0 typ |
SOT-363 (SC-70) |
|
pdf |
10874 |
|
|
2nd stg |
at 4 GHz 0.65 typ |
at 4 GHz 15.0 typ |
|
|
|
|
packages: 63 77
ATF-36 FET chip Statz model parameters for small signal operation.
MODEL=FET
IDS model Gate model Parasitics
NFET=yes DELTA=0.2 RG=1
PFET= GSCAP=3 RD=0.5
IDSMOD=3 CGS=0.13 pF RS=0.5
VTO=-0.55 GDCAP=3 LG=0.03 nH
BETA=0.10 CGD=0.04 pF LD=0.04 nH
LAMBDA=0.25 LS=0.01 nH IS=1 nA
ALPHA=5.0 CDS=0.05 pF IR=1 nA
B=1.5 CRF=0.1 IMAX=0.1
TNOM=27 RC=350 XTI=
IDSTC= N=
VBI=0.7 EG=
Breakdown Noise
GSFWD=1 FNC=01e+6
GSREV=0 R=0.17
GDFWD=1 P=0.55
GDREV=0 C=0.2
VJR=1
Applications Literature |
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General Information about GaAs FETs
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