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- Geometries:
- 10: 500 micron gate width low noise MESFET
- 13: 250 micron gate width low noise MESFET
- 21: 750 micron gate width general purpose MESFET
- 25: 500 micron gate width general purpose MESFET
- 26: 250 micron gate width general purpose MESFET
- 36: 200 micron gate width high performance PHEMT
- 44: 5000 micron gate width medium power MESFET
- 45: 2500 micron gate width medium power MESFET
- 46: 1250 micron gate width medium power MESFET
- Noise Figure Bin:
- GaAs FETs are typically sold by noise figure bin. In general, low numbers (0,1) equate to superior noise performance devices used as first stage FETs and middle numbers (2,3,4,5) equate to noise performance appropriate for second stage use. Devices with higher number codes (7, 8) are typically used as gain stages or oscillators.
- Package
- refer to package options
- Example:
- ATF-10236
- ATF: GaAs FET / PHEMT transistor
- 10: 500 micron low noise process MESFET
- 2: moderate noise performance (second stage use)
- 36: surface mount ceramic "micro-x" package
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