|
About our
Company
Overview
Peregrine Semiconductor
is a supplier of the industry's most advanced RF and mixed-signal communications ICs
which are ideally suited for the wireless infrastructure and mobile
wireless; broadband communications; space; defense and avionics markets.
Manufactured on the Company’s proprietary UltraCMOS™ technology, the Peregrine product
portfolio is poised to meet the demands of a global RF design community – in
high-growth applications such as WCDMA and GSM digital cellular, broadband,
DTV, DVR, and radiation hard space and defense programs. Peregrine’s products
feature monolithic integration and ease-of-development, which are essential to
timely and cost-effective application design by our customers. The Company is headquartered in
San Diego, California, and employs
nearly 200 people worldwide. Peregrine
0.25µm and 0.5µm UltraCMOS devices are manufactured in its 6" CMOS
facility located in Sydney, Australia, and Hachioji, Japan through an alliance with Oki
Electric Industry Co., Ltd.
Market focus
Today’s
highly mobile society has created a market demand for high-performance,
cost-effective RF capability.
From GSM
cellular handsets, CDMA digital cellular and RIM devices, to CATV/DTV/DVR and
other high-growth wireless broadband applications, engineers in the RF market
space push to develop more efficient, less costly designs.As well, space and
defense programs including
satellites with rad-hard requirements, have become paramount to the safety and
security of all nations. As these designs evolve, so too does the RF signal
chain, which has long been seen as one of the more complex parts of the
design…until now.
Peregrine’s
unique, patented UltraCMOS™ silicon-on-sapphire process technology allows us to
design and manufacture products for the mobile wireless and wireless
infrastructure; broadband communications; space, defense and avionics markets
with a level of RF performance that is unmatched in the industry.
UltraCMOS™ Technology
UltraCMOS™ mixed signal
process technology is a proprietary, patented variation of silicon on-insulator
(SOI) technology. It is the first commercially qualified use of Ultra
Thin-Silicon (UTSi®) on sapphire substrates with high yields and
competitive costs.
The greatest asset of the
UltraCMOS process lies in its unprecedented ability to combine
high-performance RF, mixed signal, passive elements, nonvolatile memory and
digital functions on a single chip. Customers have validated the cost and
performance advantage of UltraCMOS over competing mixed signal
processes--GaAs, SiGe and bulk silicon CMOS--in applications where RF
performance, low power, and integration are paramount. In addition, because
UltraCMOS products are fabricated in a standard high volume CMOS wafer
fabrication facility, our products and our customers benefit from the
fundamental cost effectiveness and high yields, scalability and integration of
CMOS, while achieving the performance of SiGe and
GaAs. In addition, since sapphire is a near perfect
insulator, UltraCMOS-based products can integrate high quality passive
devices directly into the ICs, offering unprecedented levels of RF integration
and cost effectiveness.
read more>
Products
Since its inception,
Peregrine Semiconductor has focused its engineering resources on designing RF
ICs which deliver best-in-class performance from antenna in to data out. The Peregrine UltraCMOS product portfolio
achieves new milestones in monolithic integration, linearity, ultra-low power
consumption and value, and showcases CMOS achievements including cellular
handset switches and 13 GHz rad-hard prescalers.
read more>
|
|
