Using its patented UltraCMOS technology, Peregrine has mastered the technique of processing Ultra-Thin Silicon (UTSi®) circuitry on an insulating dielectric sapphire substrate. With this technology, Peregrine is producing integrated circuits (ICs) that are expanding customer options by providing major advances in speed and power at a lower cost.

The UltraCMOS process is a patented silicon-on-sapphire technology (SOS) that has for years been recognized as a technically superior semiconductor vehicle reserved for highly specialized military and space projects. SOS was thought to be impossible to manufacture in commercial volumes at a reasonable cost. Overcoming these challenges without sacrificing the inherent benefits of the technology took several years of research and development, all now protected by dozens of patents. The UltraCMOS process is the industry’s first and only commercially qualified use of Ultra-Thin-Silicon (UTSi®) on sapphire substrates enabling the combination of high-performance RF, mixed-signal, passive elements, nonvolatile memory and digital functions on a single device.

This monolithic integration provides significant performance advantages over competing mixed-signal processes such as GaAs, SiGe, BiCMOS and bulk silicon CMOS in applications where RF performance, low power and integration are paramount. Additionally, because UltraCMOS devices are fabricated in standard high-volume CMOS facilities, products benefit from the fundamental reliability, cost effectiveness, high yields, scalability and integration of CMOS, while achieving the peak performance levels historically expected from SiGe and GaAs.