|
Technology
Features
|
Features Summary |
Units |
Process Variants |
|
FA |
FC |
FD |
FN |
FO |
GA |
GC |
|
Generation |
|
0.5 um |
0.25 um |
|
Release Status |
|
Production |
Pilot Production |
|
Application |
|
Com/Auto/Mil |
Rad-Hard |
Com/Auto/Mil |
|
Supply Voltage |
V |
3.0/3.3 |
2.5 |
|
Transistor Vts |
|
3n/3p |
3n/3p |
3n/3p* |
3n/3p |
3n/3p |
3n/3p |
3n/3p |
|
Resistors |
|
2n/1p/1polycide |
1n/1p/1silicide |
|
Interconnect Layers |
|
3 |
3** |
2 |
3 |
3** |
3 |
3** |
|
MIM Caps |
|
No |
Yes |
No |
No |
Yes |
No |
Yes |
|
Ft (IN Device) |
GHz |
15 |
30 |
|
fmax |
GHz |
45 |
90 |
* Process option available for 2 Vts of n/p devices
** Last layer interconnect is a thick metal layer for High Q Inductor construction |
|
