• BF556A
• BF556B
 

Model of BF556A (date: 8-1-00)

Simulation Values
*PHILIPS SEMICONDUCTORS Version 1.0 *Filename: BF556A.PRM Date: Jan 1993 * .MODEL BF556A NJF + VTO = -2.1333E+000 + BETA = 1.06491E-003 + LAMBDA = 1.68673E-002 + RD = 1.41231E+001 + RS = 1.41231E+001 + IS = 3.50865E-016 + CGS = 2.10000E-012 + CGD = 2.30000E-012 + PB = 7.73895E-001 + FC = 5.00000E-001 *Parameter with default value: FC

 View this model

Simulation Description
Model parameters for BF556A Jan 1993 Version 1.0 1) VTO = -2.133 Volt 2) BETA = 1.064 m Amp/V2 3) LAMBDA = 16.86 m 1/Volt 4) RD = 14.12 Ohm 5) RS = 14.12 Ohm 6) IS = 350.8 a Amps 7) CGSO = 2.100 p Farad 8) CGDO = 2.300 p Farad 9) PB = 773.8 m Volt 10) * FC = 500.0 m No units * = parameter not extracted, default value.  

Model of BF556B (date: 8-1-00)

Simulation Values
*PHILIPS SEMICONDUCTORS Version: 1.0 *Filename: BF556B.PRM Date: Jan 1993 * .MODEL BF556B NJF + VTO = -2.3085E+000 + BETA = 1.09045E-003 + LAMBDA = 2.31754E-002 + RD = 7.77648E+000 + RS = 7.77648E+000 + IS = 2.59121E-016 + CGS = 2.00000E-012 + CGD = 2.20000E-012 + PB = 9.91494E-001 + FC = 5.00000E-001 *Parameter with default value: FC

 View this model

Simulation Description
Model parameters for BF556B Jan 1993 Version 1.0 1) VTO = -2.308 Volt 2) BETA = 1.090 m Amp/V2 3) LAMBDA = 23.17 m 1/Volt 4) RD = 7.776 Ohm 5) RS = 7.776 Ohm 6) IS = 259.1 a Amps 7) CGSO = 2.000 p Farad 8) CGDO = 2.200 p Farad 9) PB = 991.4 m Volt 10) * FC = 500.0 m No units * = parameter not extracted, default value.