• BFR30
• BFR31
 

Model of BFR30 (date: 8-1-00)

Simulation Values
*PHILIPS SEMICONDUCTORS Version: 1.0 *Filename: BFR30.PRM Date: Oct 1992 * .MODEL BFR30 NJF + VTO = -2.0850E+000 + BETA = 1.24635E-003 + LAMBDA = 2.46045E-002 + RD = 1.68159E+001 + RS = 1.68159E+001 + IS = 2.16894E-016 + CGS = 2.25000E-012 + CGD = 2.25000E-012 + PB = 9.32203E-001 + FC = 5.00000E-001 *Parameter with default value: FC

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Simulation Description
Model parameters for BFR30 Oct 1992 Version 1.0 1) VTO = -2.085 Volt 2) BETA = 1.246 m Amp/V2 3) LAMBDA = 24.60 m 1/Volt 4) RD = 16.81 Ohm 5) RS = 16.81 Ohm 6) IS = 216.8 a Amps 7) CGSO = 2.250 p Farad 8) CGDO = 2.250 p Farad 9) PB = 932.2 m Volt 10) * FC = 500.0 m No units * = parameter not extracted, default value.  

Model of BFR31 (date: 8-1-00)

Simulation Values
*PHILIPS SEMICONDUCTORS Version: 1.0 *Filename: BFR31.PRM Date: Oct 1992 * .MODEL BFR31 NJF + VTO = -1.0686E+000 + BETA = 1.73071E-003 + LAMBDA = 2.29157E-002 + RD = 9.05115E+000 + RS = 9.05115E+000 + IS = 1.70538E-016 + CGS = 2.20000E-012 + CGD = 2.20000E-012 + PB = 9.78591E-001 + FC = 5.00000E-001 *Parameter with default value: FC

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Simulation Description
Model parameters for BFR31 Oct 1992 Version 1.0 1) VTO = -1.068 Volt 2) BETA = 1.730 m Amp/V2 3) LAMBDA = 22.91 m 1/Volt 4) RD = 9.051 Ohm 5) RS = 9.051 Ohm 6) IS = 170.5 a Amps 7) CGSO = 2.200 p Farad 8) CGDO = 2.200 p Farad 9) PB = 978.5 m Volt 10) * FC = 500.0 m No units * = parameter not extracted, default value.