• J174
• J175
• J176
• J177
 

Model of J174 (date: 8-1-00)

Simulation Values
*PHILIPS SEMICONDUCTORS Version: 1.0 *Filename: J174.PRM Date: sep 1992 * .MODEL J174 PJF + VTO = -7.1507E+000 + BETA = 1.24461E-003 + LAMBDA = 2.01968E-002 + RD = 3.95403E+000 + RS = 3.95403E+000 + IS = 9.72750E-016 + CGS = 1.58000E-011 + CGD = 1.88000E-011 + PB = 3.72072E-001 + FC = 5.00000E-001 *Parameter with default value: FC

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Simulation Description
Model parameters for J174 Sep 1992 Version 1.0 1) VTO = -7.150 Volt 2) BETA = 1.244 m Amp/V2 3) LAMBDA = 20.19 m 1/Volt 4) RD = 3.954 Ohm 5) RS = 3.954 Ohm 6) IS = 972.7 a Amps 7) CGSO = 15.80 p Farad 8) CGDO = 18.80 p Farad 9) PB = 372.0 m Volt 10) * FC = 500.0 m No units * = parameter not extracted, default value  

Model of J175 (date: 8-1-00)

Simulation Values
*PHILIPS SEMICONDUCTORS Version: 1.0 *Filename: J175.PRM Date: sep 1992 * .MODEL J175 PJF + VTO = -3.6320E+000 + BETA = 2.84523E-003 + LAMBDA = 2.00000E-002 + RD = 1.17482E+001 + RS = 1.17482E+001 + IS = 7.74158E-016 + CGS = 1.57000E-011 + CGD = 1.70000E-011 + PB = 3.19450E-001 + FC = 5.00000E-001 *Parameter with default value: FC

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Simulation Description
Model parameters for J175 Sep 1992 Version 1.0 1) VTO = -3.632 Volt 2) BETA = 2.845 m Amp/V2 3) LAMBDA = 20.00 m 1/Volt 4) RD = 11.74 Ohm 5) RS = 11.74 Ohm 6) IS = 774.1 a Amps 7) CGSO = 15.70 p Farad 8) CGDO = 17.00 p Farad 9) PB = 319.4 m Volt 10) * FC = 500.0 m No units * = parameter not extracted, default value

 

Model of J176 (date: 8-1-00)

Simulation Values
*PHILIPS SEMICONDUCTORS Version: 1.0 *Filename: J176.PRM Date: sep 1992 * .MODEL J176 PJF + VTO = -2.3000E+000 + BETA = 2.89414E-003 + LAMBDA = 2.00000E-002 + RD = 1.02409E+000 + RS = 1.02409E+000 + IS = 4.51393E-016 + CGS = 1.00000E-011 + CGD = 1.05000E-011 + PB = 7.05860E-001 + FC = 5.00000E-001 *Parameter with default value: FC

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Simulation Description
Model parameters for J176 Sep 1992 Version 1.0 1) VTO = -2.300 Volt 2) BETA = 2.894 m Amp/V2 3) LAMBDA = 20.00 m 1/Volt 4) RD = 1.024 Ohm 5) RS = 1.024 Ohm 6) IS = 451.3 a Amps 7) CGSO = 10.00 p Farad 8) CGDO = 10.50 p Farad 9) PB = 705.8 m Volt 10) * FC = 500.0 m No units * parameter not extracted, default value

 

Model of J177 (date: 8-1-00)

Simulation Values
*PHILIPS SEMICONDUCTORS Version: 1.0 *Filename: J177.PRM Date: sep 1992 * .MODEL J177 PJF + VTO = -1.8000E+000 + BETA = 3.37432E-003 + LAMBDA = 2.41676E-002 + RD = 1.45880E+000 + RS = 1.45880E+000 + IS = 7.27555E-016 + CGS = 8.90000E-012 + CGD = 1.02500E-011 + PB = 6.94243E-001 + FC = 5.00000E-001 *Parameter with default value: FC

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Simulation Description
Model parameters for J177 Sep 1992 Version 1.0 1) VTO = -1.800 Volt 2) BETA = 3.374 m Amp/V2 3) LAMBDA = 24.16 m 1/Volt 4) RD = 1.458 Ohm 5) RS = 1.458 Ohm 6) IS = 727.5 a Amps 7) CGSO = 8.900 p Farad 8) CGDO = 10.25 p Farad 9) PB = 694.2 m Volt 10) * FC = 500.0 m No units * = parameter not extracted, default value