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Information as of 2000-01-10
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BF1101; BF1101R; BF1101WR; N-channel dual-gate MOS-FETs
Description
Features
Applications
Datasheet
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DescriptionGo to the top of this page

Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1101, BF1101R and BF1101WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic packages respectively.


FeaturesGo to the top of this page

  • Short channel transistor with high forward transfer admittance to input capacitance ratio
  • Low noise gain controlled amplifier up to 1 GHz
  • Partly internal self-biasing circuit to ensure good cross-modulation performance during AGC and good DC stabilization.


ApplicationsGo to the top of this page

  • VHF and UHF applications with 3 to 7 V supply voltage, such as television tuners and professional communications equipment.


DatasheetGo to the top of this page

Type nr.

Title

Publication release date

Datasheet status

Page count

File size (kB)

Datasheet

BF1101; BF1101R; BF1101WR  N-channel dual-gate MOS-FETs  14-May-99  Product Specification  16   128  Download PDF Open 


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(Internet access required) BF1101; BF1101R; BF1101WR links to the similar products page containing an overview of products that are similar in function or related to the part number(s) as listed on this page. The similar products page includes products from the same catalog tree(s) , relevant selection guides and products from the same functional category.

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