Information as of 2000-01-10
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BF1101; BF1101R; BF1101WR; N-channel dual-gate MOS-FETs

• Description • Features • Applications • Datasheet • Find similar products

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Description

Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1101, BF1101R and BF1101WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic packages respectively.

Features

• Short channel transistor with high forward transfer admittance to input capacitance ratio
• Low noise gain controlled amplifier up to 1 GHz
• Partly internal self-biasing circuit to ensure good cross-modulation performance during AGC and good DC stabilization.

Applications

• VHF and UHF applications with 3 to 7 V supply voltage, such as television tuners and professional communications equipment.

Datasheet

Type nr.	Title	Publication release date	Datasheet status	Page count	File size (kB)	Datasheet
BF1101; BF1101R; BF1101WR	N-channel dual-gate MOS-FETs	14-May-99	Product Specification	16	128	Open

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