Information as of 2000-01-10
 Latest information online 

BF1102; Dual N-channel dual gate MOS-FET

• Description • Features • Applications • Datasheet • Products, packages, availability and ordering • Find similar products

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Description

The BF1102 is a combination of two equal dual gate MOS-FETs with shared source and gate 2 leads. The source and substrate are interconnected. An internal bias circuit enables DC stabilization and a very good cross-modulation performance at 5 V supply voltage. Integrated diodes between the gates and source protect against excessive input voltage surges. The transistor has a SOT363 micro-miniature plastic package.

Features

• Two low noise gain controlled amplifiers in a single package
• Specially designed for 5 V applications
• Superior cross-modulation performance during AGC
• High forward transfer admittance
• High forward transfer admittance to input capacitance ratio.

Applications

• Gain controlled low noise amplifier for VHF and UHF applications such as television tuners and professional communications equipment.

Datasheet

Type nr.	Title	Publication release date	Datasheet status	Page count	File size (kB)	Datasheet
BF1102	Dual N-channel dual gate MOS-FET	08-Jul-99	Preliminary Specification	12	166	Open

Products, packages, availability and ordering

Partnumber	Order code (12nc)	marking/packing	package	device status	buy online
BF1102	9340 555 21115	Standard marking * reel pack, SMD, 7"	SOT363	CQS	-

Please note, devices listed in the "Products, packages, availability and ordering" table marked with "WIT" are discontinued. Devices marked with "DOD" will be in the near future.
Contact your nearest sales or distributor office for the latest information on product status and availability.

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