|   Information as of 2000-01-10
  Latest information online 
				BF1105; BF1105R; BF1105WR; N-channel dual-gate MOS-FETs
								
 
			 
 | Description |  | 
  Enhancement type N-channel
 field-effect transistor with source and
 substrate interconnected. Integrated
 diodes between gates and source
 protect against excessive input
 voltage surges. The BF1105,
 BF1105R and BF1105WR are
 encapsulated in the SOT143B,
 SOT143R and SOT343R plastic
 packages respectively.  
 | Features |  | 
  
 Short channel transistor with high
 forward transfer admittance to input
 capacitance ratio
 Low noise gain controlled amplifier
 up to 1 GHz.
 Internal self-biasing circuit to
 ensure good cross-modulation
 performance during AGC and good
 DC stabilization.
  
 | Applications |  | 
  
 VHF and UHF applications with 5 V
 supply voltage, such as television
 tuners and professional
 communications equipment.
  
 | Datasheet |  | 
 
 
 
 | Products, packages, availability and ordering |  | 
 
Please note, devices listed in the "Products, packages, availability and ordering" table marked with "WIT" are discontinued. Devices marked with "DOD" will be in the near future.Contact your nearest sales or distributor office for the latest information on product status and availability.
 
 
 | Find similar products: |  | 
  BF1105; BF1105R; BF1105WR links to the similar products page containing an overview of products that are similar in function or related to the part number(s) as listed on this page. The similar products page includes products from the same catalog tree(s) , relevant selection guides and products from the same functional category.
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