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Information as of 2000-01-10
BF1107; BF1107W; N-channel single gate MOS-FETs
The BF1107 and BF1107W are depletion type field-effect
transistors in SOT23 and SOT323 packages respectively.
The low loss and high isolation capabilities of this
MOS-FET provide excellent RF switching functions.
Integrated diodes between gate and source and between
gate and drain protect against excessive input voltage
surges. Drain and source are interchangeable.
Page count File size (kB) Datasheet
BF1107; BF1107W links to the similar products page containing an overview of products that are similar in function or related to the part number(s) as listed on this page. The similar products page includes products from the same catalog tree(s) , relevant selection guides and products from the same functional category. |
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