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Information as of 2000-01-10
BF1201; BF1201R; BF1201WR; N-channel dual-gate PoLo MOS-FETs
Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1201, BF1201R and BF1201WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic packages respectively.
Page count File size (kB) Datasheet
BF1201; BF1201R; BF1201WR links to the similar products page containing an overview of products that are similar in function or related to the part number(s) as listed on this page. The similar products page includes products from the same catalog tree(s) , relevant selection guides and products from the same functional category. |
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