Information as of 2000-01-10
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BF904A; BF904AR; BF904AWR; N-channel dual gate MOS-FETs

• Description • Features • Applications • Datasheet • Find similar products

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Description

Enhancement type field-effect transistors. The transistors consist of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC.
The BF904A, BF904AR and BF904AWR are encapsulated in the SOT143B, SOT143R and SOT343R plastic packages respectively.

Features

• Specially designed for use at 5 V supply voltage
• Short channel transistor with high transfer admittance to input capacitance ratio
• Low noise gain controlled amplifier up to 1 GHz
• Superior cross-modulation performance during AGC.

Applications

• VHF and UHF applications with 3 to 7 V supply voltage such as television tuners and professional communications equipment.

Datasheet

Type nr.	Title	Publication release date	Datasheet status	Page count	File size (kB)	Datasheet
BF904A; BF904AR; BF904AWR	N-channel dual gate MOS-FETs	14-May-99	Product Specification	16	114	Open

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