|   Information as of 2000-01-11
  Latest information online 
				BF904WR; N-channel dual-gate MOS-FET
								
 
			 
 | Description |  | 
  Enhancement type field-effect transistor in a plastic
 microminiature SOT343R package. The transistor
 consists of an amplifier MOS-FET with source and
 substrate interconnected and an internal bias circuit to
 ensure good cross-modulation performance during AGC.  
 | Features |  | 
  
 Specially designed for use at 5 V supply voltage
 Short channel transistor with high forward transfer
 admittance to input capacitance ratio
 Low noise gain controlled amplifier up to 1 GHz
 Superior cross-modulation performance during AGC.
  
 | Applications |  | 
  
 VHF and UHF applications with 3 to 7 V supply voltage
 such as television tuners and professional
 communications equipment.
  
 | Datasheet |  | 
 
 
 
 | Products, packages, availability and ordering |  | 
 
Please note, devices listed in the "Products, packages, availability and ordering" table marked with "WIT" are discontinued. Devices marked with "DOD" will be in the near future.Contact your nearest sales or distributor office for the latest information on product status and availability.
 
 
 | Find similar products: |  | 
  BF904WR links to the similar products page containing an overview of products that are similar in function or related to the part number(s) as listed on this page. The similar products page includes products from the same catalog tree(s) , relevant selection guides and products from the same functional category.
 
 | Support & tools |  | 
 Spice model of BF904WR
 |