Information as of 2000-01-11
Latest information online
BF904WR; N-channel dual-gate MOS-FET
Description | ![Go to the top of this page](../images/main/top.gif) |
Enhancement type field-effect transistor in a plastic
microminiature SOT343R package. The transistor
consists of an amplifier MOS-FET with source and
substrate interconnected and an internal bias circuit to
ensure good cross-modulation performance during AGC.
Features | ![Go to the top of this page](../images/main/top.gif) |
- Specially designed for use at 5 V supply voltage
- Short channel transistor with high forward transfer
admittance to input capacitance ratio
- Low noise gain controlled amplifier up to 1 GHz
- Superior cross-modulation performance during AGC.
Applications | ![Go to the top of this page](../images/main/top.gif) |
- VHF and UHF applications with 3 to 7 V supply voltage
such as television tuners and professional
communications equipment.
Datasheet | ![Go to the top of this page](../images/main/top.gif) |
Products, packages, availability and ordering | ![Go to the top of this page](../images/main/top.gif) |
Please note, devices listed in the "Products, packages, availability and ordering" table marked with "WIT" are discontinued. Devices marked with "DOD" will be in the near future. Contact your nearest sales or distributor office for the latest information on product status and availability.
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BF904WR links to the similar products page containing an overview of products that are similar in function or related to the part number(s) as listed on this page. The similar products page includes products from the same catalog tree(s) , relevant selection guides and products from the same functional category.
Support & tools | ![Go to the top of this page](../images/main/top.gif) |
Spice model of BF904WR
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