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Information as of 2000-01-10
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BFG480W; NPN wideband transistor
Description
Features
Applications
Datasheet
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DescriptionGo to the top of this page

NPN double polysilicon wideband transistor with buried layer for low voltage applications in a 4-pin dual-emitter SOT343R plastic package.


FeaturesGo to the top of this page

  • High power gain
  • High efficiency
  • Low noise figure
  • High transition frequency
  • Emitter is thermal lead
  • Low feedback capacitance
  • Linear and non-linear operation.


ApplicationsGo to the top of this page

  • RF front end with high linearity system demands (CDMA)
  • Common emitter class AB driver.


DatasheetGo to the top of this page

Type nr.

Title

Publication release date

Datasheet status

Page count

File size (kB)

Datasheet

BFG480W  NPN wideband transistor  21-Oct-98  Product Specification  16   160  Download PDF Open 


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