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![]() Information as of 2000-01-10
BFQ136; NPN 4 GHz wideband transistor
NPN transistor in a four-lead
dual-emitter SOT122A envelope with
a ceramic cap. All leads are isolated
from the stud. Diffused
emitter-ballasting resistors and the
application of gold sandwich
metallization ensure an optimum
temperature profile and excellent
reliability properties. It features
extremely high output voltage
capabilities.
It is primarily intended for final stages
in UHF amplifiers.
Page count File size (kB) Datasheet
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