Information as of 2000-01-10
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BLS2731-110; Microwave power transistor

• Description • Features • Applications • Datasheet • Products, packages, availability and ordering • Find similar products

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Description

NPN silicon planar epitaxial microwave power transistor in a 2-lead rectangular flange package with a ceramic cap (SOT423A) with the common base connected to the flange.

Features

• Suitable for short and medium pulse applications
• Internal input and output matching networks for an easy circuit design
• Emitter ballasting resistors improve ruggedness
• Gold metallization ensures excellent reliability
• Interdigitated emitter-base structure provides high emitter efficiency
• Multicell geometry improves power sharing and reduces thermal resistance.

Applications

• Common base class-C pulsed power amplifiers for radar applications in the 2.7 to 3.1 GHz band.

Datasheet

Type nr.	Title	Publication release date	Datasheet status	Page count	File size (kB)	Datasheet
BLS2731-110	Microwave power transistor	30-Jan-98	Product Specification	12	85	Open

Products, packages, availability and ordering

Partnumber	Order code (12nc)	marking/packing	package	device status	buy online
BLS2731-110	9340 457 80114	Standard marking * trade pack	SOT423	RFS	-

Please note, devices listed in the "Products, packages, availability and ordering" table marked with "WIT" are discontinued. Devices marked with "DOD" will be in the near future.
Contact your nearest sales or distributor office for the latest information on product status and availability.

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