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![]() Information as of 2000-01-10
BLW29; VHF power transistor
N-P-N silicon planar epitaxial
transistor intended for use in class-A,
B or C operated mobile transmitters
with a nominal supply voltage of
13,5 V. Because of the high gain and
excellent power handling capability,
the transistor is especially suited for
design of wide-band and
semi-wide-band v.h.f. amplifiers.
Together with a BFQ42 driver stage,
the chain can deliver 15 W with a
maximum drive power of 120 mW at
175 MHz. The transistor is resistance
stabilized and is guaranteed to
withstand severe load mismatch
conditions with a supply over-voltage
to 16,5 V.
It has a 3/8" capstan envelope with a
ceramic cap. All leads are isolated
from the stud.
Page count File size (kB) Datasheet
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