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![]() Information as of 2000-01-10
BLW96; HF/VHF power transistor
N-P-N silicon planar epitaxial
transistor intended for use in class-A,
AB and B operated high power
industrial and military transmitting
equipment in the h.f. and v.h.f. band.
The transistor presents excellent
performance as a linear amplifier in
s.s.b. applications. It is resistance
stabilized and is guaranteed to
withstand severe load mismatch
conditions. Transistors are supplied
in matched hFE groups.
The transistor has a 1/2" flange
envelope with a ceramic cap. All
leads are isolated from the flange.
Page count File size (kB) Datasheet
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