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![]() Information as of 2000-01-10
BLW97; HF power transistor
N-P-N silicon planar epitaxial
transistor designed for use in class-A,
AB and B operated high-power
industrial and military transmitting
equipment in the h.f. band.
The transistor offers excellent
performance as a linear amplifier in
s.s.b. applications. It is resistance
stabilized and is made to withstand
severe load-mismatch conditions. All
leads are isolated from the flange.
The transistors are supplied in
matched hFE groups.
Page count File size (kB) Datasheet
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