|
|
|||
|
|
|
Information as of 2000-01-10
IRFZ44NS; N-channel enhancement mode TrenchMOSÔ transistor
N-channel enhancement mode standard level field-effect power transistor in a surface mounting plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in switched mode power supplies and general purpose switching applications.
Page count File size (kB) Datasheet
|
|
Copyright © 2000 Royal Philips Electronics All rights reserved. Terms and conditions. |
|