Information as of 2000-01-10
 Latest information online
LLE18100X; NPN silicon planar epitaxial microwave power transistor
| Description |  |
NPN silicon planar epitaxial
microwave power transistor in a
SOT437A glued cap metal ceramic
flange package, with emitter
connected to flange.
| Features | |
- Diffused emitter ballasting resistors
providing excellent current sharing
and withstanding a high VSWR
- Interdigitated structure provides
high emitter efficiency
- Gold metallization realizes very
good stability of the characteristics
and excellent lifetime
- Multicell geometry gives good
balance of dissipated power and
low thermal resistance
- Internal input prematching ensures
good stability and allows an easier
design of wideband circuits.
| Applications | |
Intended for use in common emitter,
class AB power amplifiers in CW
conditions for professional
applications at 1.85 GHz.
| Datasheet | |
| Products, packages, availability and ordering | |
Detailed discontinuation information Please note, devices listed in the "Products, packages, availability and ordering" table marked with "WIT" are discontinued. Devices marked with "DOD" will be in the near future.
Contact your nearest sales or distributor office for the latest information on product status and availability.
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LLE18100X links to the similar products page containing an overview of products that are similar in function or related to the part number(s) as listed on this page. The similar products page includes products from the same catalog tree(s) , relevant selection guides and products from the same functional category.
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