Information as of 2000-01-10
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LVE21050R; NPN microwave power transistor

• Description • Features • Applications • Datasheet • Products, packages, availability and ordering • Find similar products •

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Description

NPN silicon planar epitaxial microwave power transistor in a SOT445A metal ceramic flange package with the emitter connected to the flange.

Features

• Diffused emitter ballasting resistors provide excellent current sharing and withstanding a high VSWR
• Self-aligned process entirely ion implanted
• Gold metallization ensures an optimum temperature profile with excellent performance and reliability
• Input matching cell improves input impedance and allows an easier design of wideband circuits.

Applications

• Common emitter class-A linear power amplifiers up to 4.2 GHz.

Datasheet

Type nr.	Title	Publication release date	Datasheet status	Page count	File size (kB)	Datasheet
LVE21050R	NPN microwave power transistor	14-Feb-97	Product Specification	8	63	Open

Products, packages, availability and ordering

Partnumber	Order code (12nc)	marking/packing	package	device status	buy online
LVE21050R	9337 832 00112	Standard marking * bulk pack	SOT445	RFS

Please note, devices listed in the "Products, packages, availability and ordering" table marked with "WIT" are discontinued. Devices marked with "DOD" will be in the near future.
Contact your nearest sales or distributor office for the latest information on product status and availability.

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