Information as of 2000-01-10
Latest information online
PTB23006U; Microwave power transistor
Description | ![Go to the top of this page](../images/main/top.gif) |
NPN silicon planar epitaxial
microwave power transistor in a
SOT440A hermetically sealed metal
ceramic flange package, with base
connected to flange.
Features | ![Go to the top of this page](../images/main/top.gif) |
- Very high power gain
- Diffused emitter ballasting resistors
improve ruggedness
- Interdigitated emitter-base
structure
- Gold metallization with barrier layer
to prevent electromigration and
gold diffusion during life
- Multicell geometry improves power
sharing and reduces thermal
resistance
- Internal input prematching network.
Applications | ![Go to the top of this page](../images/main/top.gif) |
Intended for use in common-base,
class C power amplifiers at
frequencies up to 2.3 GHz.
Datasheet | ![Go to the top of this page](../images/main/top.gif) |
Products, packages, availability and ordering | ![Go to the top of this page](../images/main/top.gif) |
Please note, devices listed in the "Products, packages, availability and ordering" table marked with "WIT" are discontinued. Devices marked with "DOD" will be in the near future. Contact your nearest sales or distributor office for the latest information on product status and availability.
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PTB23006U links to the similar products page containing an overview of products that are similar in function or related to the part number(s) as listed on this page. The similar products page includes products from the same catalog tree(s) , relevant selection guides and products from the same functional category.
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