Information as of 2000-01-11
Latest information online
PTB32001X; PTB32003X; PTB32005X; NPN microwave power transistors
| Description |  |
NPN silicon planar epitaxial microwave power transistor in
a metal ceramic SOT440A flange package with base
connected to the flange.
| Features |  |
- Diffused emitter ballasting resistors providing excellent
current sharing and withstanding a high VSWR
- Interdigitated structure provides high emitter efficiency
- Multicell geometry gives good balance of dissipated
power and low thermal resistance
- Localized thick oxide auto-alignment process and gold
sandwich metallization ensure an optimum temperature
profile and excellent performance and reliability.
| Applications |  |
Common-base, class B power amplifiers up to 4.2 GHz.
| Datasheet |  |
| Products, packages, availability and ordering |  |
Detailed discontinuation information Please note, devices listed in the "Products, packages, availability and ordering" table marked with "WIT" are discontinued. Devices marked with "DOD" will be in the near future. Contact your nearest sales or distributor office for the latest information on product status and availability.
| Find similar products: |  |
PTB32001X; PTB32003X; PTB32005X links to the similar products page containing an overview of products that are similar in function or related to the part number(s) as listed on this page. The similar products page includes products from the same catalog tree(s) , relevant selection guides and products from the same functional category.
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