德国 First Sensor公司First Sensor 成立于1991年，前身是东德的光电产品制造商“Werk für Fernsehelektronik”，拥有一只由物理、化学及富有经验的工程师等专业人才组成的技术团队，并具有超过30年的光电探测器制造经验。目前First Sensor 在高性能硅探测器探测领域已经处于领先地位，产品包括：PIN光电二极管、雪崩光电二极管、位敏光电二极管、四象限光电二极管、频敏光电二极管。光电二极管 Series Picture Example Short Description Specs PIN光电二极管光电二极管(PIN)，用于将光信号转换为电信号，形成光电效应/光电池。PIN光电二极管应用广泛，包括：安检设备、激光测距、运动控制、分析仪器、生物医疗、光通信、军事、航空航天。雪崩二极管 FISRT SENSOR 雪崩光电二极管(APD) 供应雪崩二极管(APD)，是一种内部增益机制的光电二极管。根据具体应用，可以选择：蓝光增强型、红光增强型、红外增强型(900nm、1064nm)。雪崩二极管广泛应用于：安检设备、激光测距、运动控制、分析仪器、生物医疗、光通信、军事、航空航天、光通讯。 PSD位敏光电二极管 FIRST SENSOR AG公司位敏光电二极管位敏探测器(PSD)是根据横向光电效应(电压和电流信号随着光斑位置变化而变换的现象)的半导体敏感元件，将照射在光敏面上的光斑强度和位移量转换为电信号，以实现位置探测。四象限光电二极管/阵列 FIRST SENSOR公司四象限光电二极管/阵列四象限探...

光电二极管

供应光电二极管（PIN photodiodes），用于将光信号转换为电信号，形成光电效应/光电池。该系列光电二极管应用广泛，包括：安检设备、激光测距、运动控制、分析仪器、生物医疗、光通信、军事、航空航天。如果采购数量10片以上，提供配套的驱动电路模块。

　

Series 6b: Blue/Green sensitive photodiodes
Order #	Type		Active Area		Dark Current	Rise Time
	Chip	Package	Size	Area	5V	410nm 5V
	Chip	Package	mm	mm2	nA	ns
501429	PS1-6b	TO52S1	1×1	1	0.05	10
501430	PS1-6b	LCC6.1	1×1	1	0.05	10
501297	PC5-6b	TO5	Ø2.52	5	0.1	20
501242	PS7-6b	TO5	2.7×2.7	7	0.15	25
501229	PC10-6b	TO5	Ø3.57	10	0.2	45
501241	PS13-6b	TO5	3.5×3.5	13	0.25	50
501244	PS33-6b	TO8	5.7×5.7	33	0.6	140
501258	PS100-6b	LCC10S	10×10	100	1	200
501135	PS100-6b	CERpinE	10×10	100	1	200
501045	PS100-6b	CERpinG	10×10	100	1	200
Band-pass filter modules: PR20-6b TO5i with center wavelength 488nm, 550nm, 633nm, 680nm
Series 5b: High speed photodiodes (for Blue-sensitive photodiodes)
Order #	Type		Active Area		Dark Current	Rise Time
	Chip	Package	Size	Area	3.5V	405nm 3.5V
	Chip	Package	mm	mm2	nA	ns
501424	PS1.0-5b	TO52S1	1.0×1.0	1	0.01	1.3
501428	PS1.0-5b	LCC6.1	1.0×1.0	1	0.01	1.3
501425	PS7-5b	TO5	2.7×2.7	7	0.5	5
501426	PC10-5b	TO5	Ø3.57	10	0.5	6
501427	PS13-5b	TO5	3.5×3.5	13	1	6
Series 5t: High speed photodiodes for low voltages (for low operating voltages between 3 and 5V, making them ideal for VIS and NIR applications in conjunction with CMOS components)
Order #	Type		Active Area		Dark Current	Rise Time
	Chip	Package	Size	Area	3.5V	850nm 3.5V
	Chip	Package	mm	mm2	nA	ns
501126	PS0.25-5t	LCC6.1	0.5×0.5	0.25	0.01	0.4
501434	PS0.25-5t	SMD1206	0.5×0.5	0.25	0.01	0.4
501125	PC0.55-5t	LCC6.1	Ø0.84	0.55	0.01	1
501289	PC0.55-5t	T1 3/4	Ø0.84	0.55	0.01	1
501290	PC0.55-5t	T1 3/4 black	Ø0.84	0.55	0.01	1
501127	PS1-5t	LCC6.1	1.0×1.0	1	0.01	1
501432	PS7-5t	TO5	2.7×2.7	7	0.5	1
Series 5: High speed photodiodes (for fast rise times at low reverse voltages)
Order #	Type		Active Area		Dark Current	Rise Time
	Chip	Package	Size	Area	20V	850nm 20V
	Chip	Package	mm	mm2	nA	ns
500122	PS0.25-5	TO52S1	0.5×0.5	0.25	0.1	0.4
500119	PS0.25-5	TO52S3	0.5×0.5	0.25	0.1	0.4
500973	PS0.25-5	LCC6.1	0.5×0.5	0.25	0.1	0.4
500116	PS0.25-5	SMD1206	0.5×0.5	0.25	0.1	0.4
501257	PC0.55-5	TO52S1	Ø0.84	0.55	0.2	1
501124	PC0.55-5	LCC6.1	Ø0.84	0.55	0.2	1
500127	PS1.0-5	TO52S1	1.0×1.0	1	0.2	1.5
500128	PS1.0-5	TO52S3	1.0×1.0	1	0.2	1.5
501128	PS1.0-5	LCC6.1	1.0×1.0	1	0.2	1.5
501291	PS7-5	TO5	2.7×2.7	7	0.5	2
501218	PS11.9-5	TO5	3.45×3.45	11.9	1	3
500097	PC20-5	TO8	Ø5.05	20	2	3.5
501292	PS33-5	TO8	5.7×5.7	33	2	3.5
501011	PS100-5	LCC10S	10×10	100	2	5
501433	PS100-5	CERpinG	10×10	100	2	5
Series 6: IR photodiodes with min. dark current (for low-capacitance light detection as well as for α, β, ϒ and X-radiation detection)
Order #	Type		Active Area		Dark Current	Rise Time
	Chip	Package	Size	Area	10V	850nm 10V
	Chip	Package	mm	mm2	nA	ns
500151	PC1-6	TO52S1	Ø1.13	1	0.05	10
500482	PC1-6	TO52S3	Ø1.13	1	0.05	10
501214	PC5-6	TO5	Ø2.52	5	0.1	13
501221	PS7-6	TO5	2.66×2.66	7	0.1	15
501193	PC10-6	TO5	Ø3.57	10	0.2	20
501246	PS13-6	TO5	3.5×3.5	13	0.2	20
500113	PC20-6	TO8	Ø5.05	20	0.3	25
501298	PS33-6	TO8	5.7×5.7	33	0.4	25
500103	PC50-6	TO8S	Ø7.98	50	0.5	30
500082	PC100-6	BNC	Ø11.28	100	1	40
501264	PS100-6	BNC	10×10	100	1	40
501435	PS100-6	LCC10S	10×10	100	1	40
500149	PS100-6	CERpinG	10×10	100	1	40
Series 7: IR photodiodes with fully depletable (very low capacitance levels)
Order #	Type		Active Area		Dark Current	Rise Time
	Chip	Package	Size	Area	10V	905nm 10V
	Chip	Package	mm	mm2	nA	ns
501285	PC5-7	TO8i	Ø2.52	5	0.05	45
501286	PC10-7	TO8i	Ø3.57	10	0.1	50
501287	PC20-7	TO8Si	Ø5.05	20	0.2	50
501317	PS100-7	LCC10G	10×10	100	1.5	50
Series Q: Photodiodes for 1064nm (specifically for laser rangefinders, laser-based targeting systems or any applications using YAG lasers or similar NIR radiation sources)
Order #	Type		Active Area		Dark Current	Rise Time
	Chip	Package	Size	Area	150V	1064nm 150v
	Chip	Package	mm	mm2	nA	ns
501446	PC10-Q	TO8i	Ø3.57	10	0.5	14
501447	PC20-Q	TO8Si	Ø5.05	20	1	14
501273	PS100-Q	LCC10G	10×10	100	80	14
501448	PC50-Q	TO8Si	Ø8	50	2.5	14

光电二极管模块

供应光电二极管模块，自带集成放大电路和温度补偿功能，配套用于雪崩二极管、位敏探测器、四象限探测器、波长敏感探测器，特别适合于系统集成、仪器开发、科学研究。

自带集成放大电路板和温度补偿功能的雪崩二极管和雪崩二极管阵列
　

Order #	Chip	Type
50159502	AD1100-8	USB-module APD-eval-kit
501543	SiPM	USB-module SiPM-eval-kit
50146502	25AA0.04-9	125 MHz LIDAR APD-array-eval-kit
501476	64AA0.04-9	125 MHz LIDAR APD-array-eval-kit

不带集成放大电路板的雪崩二极管
　

Order #	Type		Transimpedance/Ohm	Bandwidth/MHz
Order #	Chip	Package	Transimpedance/Ohm	Bandwidth/MHz
Series 8 (for 800nm)
500002	AD230-8	TO5	2750	2000
501535	AD230-8	TO52	2750	2000
500003	AD500-8	TO5	2750	1000
501536	AD500-8	TO52	2750	1300
Series 9 (for 900nm)
501403	AD500-9-8015	TO52	2750	500
501386	16AA0.13-9	Ceramic	10k	500
500756	AD230-9	TO5	2750	600
500490	AD500-9	TO5	2750	500
Series 10 (for 1064nm)
501387	AD800-10	TO8S	10k	65

自带集成放大电路板和温度补偿功能的位敏探测器、四象限探测器、波长敏感探测器
　

Order #	Chip	Type	Package
501101	QP45-Q	Quadrant PD	HVSD
500741	QP50-6	Quadrant PD	SD2
500964	QP50-6	Quadrant PD	SD2-DIAG
501102	QP50-6 (18µm)	Quadrant PD	SD2
501110	QP50-6 (18µm)	Quadrant PD	SD2-DIAG
501104	QP154-Q	Quadrant PD	HVSD
500788	DL16-7	PSD	PCBA3
500744	DL100-7	PSD	PCBA3
500819	DL400-7	PSD	PCBA
500008	WS7.56	Wavelength sensitive PD	PCBA2
501495	X100-7 with Scintillator	Gamma pulse counter	Shielded module

高压电源模块
　

Order #	Max.Voltage/V	Ripple/mV	Description	Feature
501385	-500	7.5	High performance HV source	Ultra low ripple
501381	+500	7.5	High performance HV source	Ultra low ripple
501382	+200	7.5	High performance HV source	Ultra low ripple
501383	+200	<10	Compact HV source	Small footprint
501384	+60	<10	PIN-photodiode HV source	Very small footprint

雪崩二极管

供应雪崩二极管（APD，Avalanche photodiodes），是一种内部增益机制的光电二极管：蓝光增强型、红光增强型、红外增强型（900nm、1064nm）。该系列雪崩二极管应用广泛，包括：安检设备、激光测距、运动控制、分析仪器、生物医疗、光通信、军事、航空航天、光通讯。备注：如果采购数量10片以上，提供配套的驱动电路模块。

　

Series 11: Blue sensitivity enhanced (for biomedical applications)
Order #	Type		Active Area		Dark Current	Rise Time
	Chip	Package	Size	Area	M=100	410nm 50Ω
	Chip	Package	mm	mm2	nA	ns
500970	AD800-11	TO52S1	Ø0.8	0.5	1	1
500967	AD1900-11	TO5i	Ø1.95	3	5	2
Series 12: Red sensitivity enhanced (cut-off frequency up to 3 GHz)
Order #	Type		Active Area		Dark Current	Rise Time
	Chip	Package	Size	Area	660nm M=100	660nm 50Ω
	Chip	Package	mm	mm2	A/W	GHz
501828	AD100-12	LCC6.1	Ø0.1	0.008	50	typ.3, min.2
501829	AD100-12	LCC6.1f	Ø0.1	0.008	44	typ.3, min.2
501831	AD100-12	TO52S1	Ø0.1	0.008	50	typ.3, min.2
501157	AD230-12	LCC6.1	Ø0.23	0.042	50	typ.3, min.2
501156	AD230-12	LCC6.1f	Ø0.23	0.042	44	typ.3, min.2
501820	AD230-12	LCC6.1f	Ø0.23	0.042	44	typ.3, min.2
501162	AD230-12	TO52S1	Ø0.23	0.042	50	typ.3, min.2
501155	AD500-12	LCC6.1	Ø0.5	0.196	50	typ.3, min.2
501154	AD500-12	LCC6.1f	Ø0.5	0.196	44	typ.3, min.2
501819	AD500-12	LCC6.1f	Ø0.5	0.196	44	typ.3, min.2
501163	AD500-12	TO52S1	Ø0.5	0.196	50	typ.3, min.2
Series 8: Optimized for high cut-off frequencies-850 nm (optimized for high speeds)
Order #	Type		Active Area		Dark Current	Rise Time
	Chip	Package	Size	Area	M=100	M=100 20V 50Ω
	Chip	Package	mm	mm2	nA	ns
501810	AD100-8	LCC6.1	Ø0.1	0.008	0.05	<0.18
501811	AD100-8	LCC6.1f	Ø0.1	0.008	0.05	<0.18
501812	AD100-8	LCC6.1f	Ø0.1	0.008	0.05	<0.18
500011	AD100-8	TO52S1	Ø0.1	0.008	0.05	<0.18
501171	AD100-8	TO52S3	Ø0.1	0.008	0.05	<0.18
501078	AD230-8	LCC6.1	Ø0.23	0.04	0.3	0.18
501079	AD230-8	LCC6.1f	Ø0.23	0.04	0.3	0.18
501805	AD230-8	LCC6.1f	Ø0.23	0.04	0.3	0.18
500019	AD230-8	TO52S1	Ø0.23	0.04	0.3	0.18
500022	AD230-8	TO52S3	Ø0.23	0.04	0.3	0.18
501496	AD230-8	ODFN2x2	Ø0.23	0.04	0.3	0.18
501077	AD500-8	LCC6.1	Ø0.5	0.2	0.5	0.35
501076	AD500-8	LCC6.1f	Ø0.5	0.2	0.5	0.35
501809	AD500-8	LCC6.1f	Ø0.5	0.2	0.5	0.35
500030	AD500-8	TO52S1	Ø0.5	0.2	0.5	0.35
500305	AD500-8	TO52S2	Ø0.5	0.2	0.5	0.35
500155	AD500-8	TO52S3	Ø0.5	0.2	0.5	0.35
500947	AD800-8	TO52S1	Ø0.8	0.5	2	0.7
501117	AD1100-8	TO52S1	Ø1.13	1	4-6	1
500015	AD1900-8	TO5i	Ø1.95	3	15	1.4
501194	AD3000-8	TO5i	Ø3	7.07	30	2
500160	AD5000-8	TO8i	Ø5	19.63	60	3
500002	AD230-8-2.3G	TO5	AD230-8-2.3G TO5 is a high frequency optical data receiver comprising an Avalanche Silicon Photodiode and a transimpedance amplifier in a hermetically sealed TO5 package.
500003	AD500-8-1.3G	TO5	AD500-8-1.3G TO5 is a high frequency optical data receiver comprising an Avalanche Silicon Photodiode and a transimpedance amplifier in a hermetically sealed TO5 package.
Series 9: NIR sensitivity enhanced-900nm (specifically for LIDAR and laser rangefinders)
Order #	Type		Active Area		Dark Current	Rise Time
	Chip	Package	Size	Area	M=100	M=100
	Chip	Package	mm	mm2	nA	ns
501815	AD100-9	LCC6.1	Ø0.1	0.008	0.1	<0.5
501816	AD100-9	LCC6.1f	Ø0.1	0.008	0.1	<0.5
501123	AD230-9	LCC6.1	Ø0.23	0.04	0.5	0.5
501817	AD230-9	LCC6.1f	Ø0.23	0.04	0.5	0.5
500020	AD230-9	TO52S1	Ø0.23	0.04	0.5	0.5
501265	AD230-9	TO52S1F2	Ø0.23	0.04	0.5	0.5
500023	AD230-9	TO52S3	Ø0.23	0.04	0.5	0.5
501122	AD500-9	LCC6.1	Ø0.5	0.2	0.8	0.55
501818	AD500-9	LCC6.1f	Ø0.5	0.2	0.8	0.55
500031	AD500-9	TO52S1	Ø0.5	0.2	0.8	0.55
500590	AD500-9	TO52S1F2	Ø0.5	0.2	0.8	0.55
500306	AD500-9	TO52S2	Ø0.5	0.2	0.8	0.55
500156	AD500-9	TO52S3	Ø0.5	0.2	0.8	0.55
501196	AD800-9	TO52S1	Ø0.8	0.5	2	0.9
501197	AD1100-9	TO52S1	Ø1.13	1	4	1.3
501208	AD1500-9	TO5i	Ø1.5	1.77	2	2
501198	AD3000-9	TO5i	Ø3	7.07	30	2
500161	AD5000-9	TO8i	Ø5	19.63	60	3
500756	AD230-9-400M	TO5	AD230-9-400M-TO5 is a high frequency optical data receiver comprising an Avalanche Silicon Photodiode and a transimpedance amplifier in a hermetically sealed TO-5 package.
500490	AD500-9-400M	TO5	AD500-9-400M-TO5 is a high frequency optical data receiver comprising an Avalanche Silicon Photodiode and a transimpedance amplifier in a hermetically sealed TO-5 package.
Multi-Element Array
501099	8AA0.4-9	SOJ22GL	APD Array 8 Elements, QE>80% at 760-910nm with NTC
501098	16AA0.13-9	SOJ22GL	APD Array 16 Elements, QE>80% at 760-910nm with NTC
500038	16AA0.13-9	DIL18	APD Array 16 Elements, QE>80% at 760-910nm
501097	16AA0.4-9	SOJ22GL	APD Array 16 Elements, QE>80% at 760-910nm
50130802	25AA0.04-9	BGA	APD Array 25 (5×5) elements, QE>80% at 760-910nm with PTC
50130802	25AA0.16-9	BGA	APD Array 25 (5×5) elements, QE>80% at 760-910nm with PTC
50130702	64AA0.04-9	BGA	APD Array 64 (8×8) elements, QE>80% at 760-910nm with PTC
501207	QA4000-9	TO8Si	Quadrant Avalanche Photodiode, QE>80% at 760-910nm
Series 10: NIR sensitivity enhanced - 1064nm (specifically for laser rangefinders, targeting systems or any applications using YAG lasers or similar NIR radiation sources)
Order #	Type		Active Area		Dark Current	Rise Time
	Chip	Package	Size	Area	M=100	M=100 1064nm
	Chip	Package	mm	mm2	nA	ns
500953	AD500-10	TO5i	Ø0.5	0.2	1.5	4
501233	AD800-10	TO5i	Ø0.8	0.5	3	5
500883	AD1500-10	TO5i	Ø1.5	1.77	7	5
50123401	AD4000-10	TO8Si	Ø4	12.56	50	6
501387	AD800-10	TO8S	High speed, high gain, low noise, low power consumption hybrid (AD800-10+TIA)
Multi-Element Array
501174	QA4000-10	TO8Si	Quadrant Avalanche Photodiode, High QE at 850-1070nm

光电倍增管

供应光电倍增管（Silicon Photomultiplier），基于KETEK技术，专注于微弱光的检测。该系列光电倍增管具有如下特点：单光子计数、灵敏度高、信噪比高、效应速度快、温度影响小、结构紧凑，广泛应用于：化学分析、医疗诊断、科学研究、工业集成。

　

Order #	Chip Package	Active Area(mm²)	Pixel Size(µm)	Pixel Number	Trench Technology	Geometrical Efficiency(%)	Dark Rate
50150804	THD	1.2×1.2	50×50	576	No	70	500
50150801	THD	3.0×3.0	50×50	3600	No	70	500
50150802	THD	3.0×3.0	50×50	3600	Yes	63	300
50150803	THD	6.0×6.0	60×60	10000	Yes	66	500

APD阵列

供应APD阵列：线性APD阵列、矩阵APD阵列。该系列雪崩二极管阵列主要用于：激光雷达、激光测距。我们同时供应雪崩二极管和雪崩二极管模块。

　

Order #	Chip	Package	Description
501099	8AA0.4-9	SOJ22GL	APD Array 8 Elements, QE>80% at 760-910nm with NTC
501098	16AA0.13-9	SOJ22GL	APD Array 16 Elements, QE>80% at 760-910nm with NTC
500038	16AA0.13-9	DIL18	APD Array 16 Elements, QE>80% at 760-910nm
501097	16AA0.4-9	SOJ22GL	APD Array 16 Elements, QE>80% at 760-910nm
50130802	25AA0.04-9	BGA	APD Array 25 (5x5) elements, QE>80% at 760-910nm with PTC
50130902	25AA0.16-9	BGA	APD Array 25 (5x5) elements, QE>80% at 760-910nm with PTC
50130702	64AA0.04-9	BGA	APD Array 64 (8x8) elements, QE>80% at 760-910nm with PTC
501207	QA4000-9	TO8Si	Quadrant Avalanche Photodiode, QE>80% at 760-910nm

位敏探测器

供应位敏探测器（PSD，Position Sensitive Detector），是根据横向光电效应（电压和电流信号随着光斑位置变化而变换的现象）的半导体敏感元件，将照射在光敏面上的光斑强度和位移量转换为电信号，以实现位置探测。

　

Order #	Chip	Package	Dimensions	ActiveArea(mm)	Area(mm²)	Rise Time(ns)
500588	OD3.5-6	SO8	single	3.5×1	3.5	200
500073	OD3.5-6	SMD	single	3.5×1	3.5	200
501278	OD6-6	SO16	single	6×1	6	200
501115	OD6-6	SMD	single	6×1	6	200
500062	DL16-7	CERpin	dual axis	4×4	16	500
500162	DL16-7	CERsmd	dual axis	4×4	16	500
501020	DL16-7	LCC10G	dual axis	4×4	16	500
500054	DL100-7	CERpin	dual axis	10×10	100	4000
500056	DL100-7	CERsmd	dual axis	10×10	100	4000
500952	DL100-7	LCC10	dual axis	10×10	100	4000
500066	DL400-7	CERpin	dual axis	20×20	400	4000
500068	DL400-7	CERsmd	dual axis	20×20	400	4000

四象限探测器

供应四象限探测器（QP，Quadrant photodiodes），由小间隙隔开的四个有效探测区域组成。该系列四象限探测器应用广泛，包括：激光光束的位置测量、需要精确调整的光学系统。

　

Series 6 - Quadrant photodiodes (low dark current)
Order #	Type		Active Area		Dark Current	Rise Time
	Chip	Package	Size	Area	10V	850nm 10V
	Chip	Package	mm	mm2	nA	ns
501222	QP1-6	TO52	Ø1.13	4×0.25	0.1	20
501040	QP5-6	TO5	Ø2.52	4×1.25	0.2	20
501254	QP5.8-6	TO5	2.4×2.4	4×1.45	0.4	20
501256	QP10-6	TO5	Ø3.57	4×2.5	0.5	20
500140	QP20-6	TO8S	Ø5.05	4×5	1	30
500732	QP50-6	TO8S	Ø7.8	4×12.5	2	40
500142	QP50-6	TO8S	Ø7.8	4×12.5	2	40
501416	QP50-6	TO8S flat	Ø7.8	4×12.5	2	40
501417	QP50-6	TO8S flat	Ø7.8	4×12.5	2	40
501276	QP100-6	LCC10G	Ø11.2	4×25	4	40
50127601	QP100-6	LCC10S	Ø11.2	4×25	4	40
Series 7 - Quadrant photodiodes (fully depletable)
Order #	Type		Active Area		Dark Current	Rise Time
	Chip	Package	Size	Area	10V	905nm 10V
	Chip	Package	mm	mm2	nA	ns
501319	QP100-7	LCC10G	10×10	4×25	2	50
Series Q - Quadrant photodiodes (for 1064nm)
Order #	Type		Active Area		Dark Current	Rise Time
	Chip	Package	Size	Area	150V	1064nm 150V 50Ω
	Chip	Package	mm	mm2	nA	ns
501049	QP22-Q	TO8S	Ø5.3	4×5.7	1.5	12
501048	QP45-Q	TO8S	6.7×6.7	4×10.96	8	12
501275	QP45-Q	LCC10G	6.7×6.7	4×10.96	8	12
501272	QP100-Q	LCC10G	10×10	4×25	6.5	12
500798	QP154-Q	TO1032i	Ø14.0	4×38.5	10	12
501313	QP154-Q	TO1081i	Ø14.0	4×38.5	10	12

铟镓砷探测器

供应铟镓砷探测器（InGaAs detectors），有效探测直径可达3mm，具有暗电流低和灵敏度高的特点，封装形式：TO针脚形式和SMD贴片形式。

　

InGaAs detectors (high sensitivity up to 2600nm)
Order #	Type		Active Area		Dark Current	Spectral responsivity		Waveband
	Chip	Package	Size	Area	5V	650nm	1550nm	Waveband
	Chip	Package	mm	mm2	nA	A/W	A/W	nm
501201	PC0.7-i	LCC6.1	1	0.7	2	0.05	0.95	900-1700
501203	PC0.7-i	TO52S1	1	0.7	2	0.05	0.95	900-1700
501202	PC0.7-ix	LCC6.1	1	0.7	2	0.3	0.95	600-1700
501204	PC0.7-ix	TO52S1	1	0.7	2	0.3	0.95	600-1700
501251	PC2.6-i	TO5i	2	2.6	10	0.05	0.95	900-1700
501266	PC7.1-i	TO5i	3	7.1	25	0.05	0.95	900-1700

波长敏感探测器

供应波长敏感探测器（WS，Wavelength-sensitive diodes），利用特定波长在硅基材料的辐射吸收深度来实现，特别适合于单色光的波长检测。

　

Wavelength sensitive diodes (particularly suitable for monochromatic light)
Order #	Type		Dark Current	Rise Time Diode 1	Rise Time Diode 2
	Chip	Package	5V	0V 1kΩ	0V 1kΩ
	Chip	Package	nA	ns	ns
501224	WS7.56	TO5	10	10000	1000
501225	WS7.56	TO5i	5	10000	1000

辐射探测器

供应辐射探测器（Detectors for Ionizing Radiation），具有吸收容量高、暗电流低、完全耗尽的特点，用于检测原子颗粒。

　

Detectors for ionizing radiation (silicon radiation detectors)
Order #	Type		Active Area		Dark Current	Gamma-energy (KeV)
	Chip	Package	Size	Area	Dark Current	Gamma-energy (KeV)
	Chip	Package	mm	mm2	nA	KeV
50190301	X5-γ	TO8S	Ø2.52	5	0.01	>1
50190401	X10-γ	TO8Si	Ø3.75	10	0.02	>1
50190001	X10-γ	TO8S Sc	Ø3.75	10	0.02	>2
501907	X10-6	TO39	Ø3.57	10	0.5	>5
501401	X100-7	LCC10	10×10	100	3	>5
501400	X100-7	CerPin	10×10	100	3	>5
50144501	X100-7.2	CerPin	10×10	100	5	>5
50147702	X100-7	CerPin	10×10	100	5	>5
50147701	X100-7	CerPin	10×10	100	5	>5

Arrays for X-ray inspection, optimized for scintillator luminescence. Suitable for linear multi-device-assembly with constant photodiode pitch
Order #	Type		Elements	Pitch	Active Area		Dark Current	Capacitance
	Chip	Package		Pitch	Size	Area	Dark Current	Capacitance
	Chip	Package		mm	mm	mm2	pA	pF
50146101	16XA1.9-B	DIL18 full	16	1.275	0.9×2.15	1.94	5	250
50146102	16XA1.9-B	DIL18 slim	16	1.275	0.9×2.15	1.94	5	250
50146201	16XA2.6-A	DIL18 full	16	1.575	1.2×2.15	2.58	5	135
50146202	16XA2.6-A	DIL18 slim	16	1.575	1.2×2.15	2.58	5	135
50146301	16XA5.2-A	DIL18 full	16	2.525	2.15×2.4	5.16	7.5	240
50146302	16XA5.2-A	DIL18 slim	16	2.525	2.15×2.4	5.16	7.5	240

光电管接收模块

供应光电管接收模块，由如下两部分组成：光电二极管和前置放大电路，TEC制冷模块可选（提高系统的信噪比）。该系列光电探测器模块对电路进行优化，将电磁干扰降到最小，内置前置放大电路可以用示波器或数据采集卡直接读取对应的电压值。根据不同应用，光电二极管可选，包括：UV Si，Vis Si，NIR InGaAs，Extended InGaAs，PbS，PbSe。
　

根据探测器种类、有效探测面积、是否包含TEC制冷，如下型号可供选择：

Photodiode Receiver Module, Si (200-1000nm), 2.5mm

Photodiode Receiver Module, Si (200-1000nm), 5.0mm

Photodiode Receiver Module, Si (200-1000nm), 5.0mm, TE Cooled

Photodiode Receiver Module, Si (200-1000nm), 10.0mm

Photodiode Receiver Module, Si (300-1000nm), 1.0mm

Photodiode Receiver Module, Si (300-1000nm), 2.5mm

Photodiode Receiver Module, Si (300-1000nm), 5.0mm

Photodiode Receiver Module, Si (300-1000nm), 5.0mm, TE Cooled

Photodiode Receiver Module, Si (300-1000nm), 10.0mm

Photodiode Receiver Module, Si (300-1000nm), 11.0mm, TE Cooled

Photodiode Receiver Module, InGaAs (800-1600nm), 3.0mm, TE Cooled

Photodiode Receiver Module, InGaAs(800-1700nm), 1.0mm

Photodiode Receiver Module, InGaAs (1000-1700nm), 3.0mm

Photodiode Receiver Module, InGaAs(1200-2500nm), 1.0mm, TE Cooled

Photodiode Receiver Module, InGaAs(1200-2500nm), 3.0mm, TE Cooled

Photodiode Receiver Module, InGaAs(1200-2600nm), 1.0mm

Photodiode Receiver Module, InGaAs(1200-2600nm), 3.0mm

Photodiode Receiver Module, PbS(1000-2800nm), 2.0mm, TE Cooled

Photodiode Receiver Module, PbSe(1000-4500nm), 2.0mm, TE Cooled

光电管放大器

供应光电管放大器，直接将光电二极管、光电倍增管等电流源的电流信号转换成数字信号。通过切换A/W，可以设置电流值显示或者功率值显示(作为光功率计)。该系列光电管放大器具有如下特点：满量程输入范围从±20nA至±20mA；可变偏压从-14V至14V；LCD显示读数；RS-232串行接口。

　

Specifications
Max input without damage	±25mA
Full scale range	±20nA to 20mA in decade steps, 1pA max. resolution
A/W setting	0.100 to 1.000A/W in increments of .005A/W
Output impedance	100Ω
Bias voltage	Selectable -14V to +14V in 6.5mV increments
Analog ourput port	±2V corresponds to ±20,000 counts of range in use
Noise and Drift	<1pA/5 seconds on most sensitive range
Frequency response(-3dB)	DC to 2KHz, most sensitive range
Frequency response(-3dB)	DC to 40KHz, least sensitive range
Display	4 1/2 digit LCD, 0.4" high
Power requirement	Rechargeable Ni-MH batteries with approximately 10-hours
External supply	85-250VAC, 50-60Hz, <9VA
Dimensions	140mm(W)×63mm(H)×215mm(L)
Weight	0.9kg, excluding external power supply
Operating temperature	0 to +40°C
Accessories provided	RS-232 cable, power supply/charger, operating manual

压力传感器

供应压力传感器，特点：能效高、稳定性好、准确度高、适合恶劣环境。该系列压力传感器应用：工业生产、环境保护、测量、医学领域。

　

Model		HDU	HMU
Pressure ranges		100 mbar to 5 bar	100 mbar to 10 bar
Pressure ranges		1 to 70 psi	1 to 70 psi
Pressure type		Absolute, Gage, Differential	Absolute, Gage, Differential
Output signal		100mV (FSO)	100mV (FSO)
Thermal effects	Offset	±0.02 %FSS/°C	±0.02% FSS/°C
	Span	-0.2% FSS/°C	-0.2% FSS/°C
	Bridge impedance	0.26 %/°C	0.26 %/°C
Temp. range operating		-40-85°C	-40-85°C
Dimensions without connections		12×15×7mm³	10×13×6mm³
Features		Analogue sensor with nearly unlimited resolution	Analogue sensor with nearly unlimited resolution
		Cost-effective basic pressure sensor	Cost-effective basic pressure sensor
		Cost-effective basic pressure sensor	Increased media compatibility

Model	HCL	HDO	HRO
Pressure ranges	5 to 75 mbar	10 mbar to 5 bar	10 mbar to 10 bar
Pressure ranges	2 to 30 inH2	4 inH2O to 70 psi	4 inH2O to 150 psi
Pressure type	Gage, Differential	Absolute, Gage, Differential	Gage, Differential
Output signal	20mV (FSO)	90mV (FSO)	90mV (FSO)
Accuracy, non-linearity	±0.05 %FSO	±0.1 %FSO (P-grade)	±0.25 %FSS
Accuracy, non-linearity	±0.05 %FSO	±0.2 %FSO (H-grade)	±0.25 %FSS
Temp. range compensated	0-70°C	0-50°C	0-70°C
Temp. range operating	-25-85°C	-40-85°C	-25-85°C
Dimensions without connections	13×16×7mm³	12×15×7mm³	29×18×11mm³
Features	Analogue sensor with nearly unlimited resolution	Analogue sensor with nearly unlimited resolution	Analogue sensor with nearly unlimited resolution
	For very low pressures	Different accuracy classes available	Different accuracy classes available
	Excellent offset stability
	Virtually no position sensitivity

Model	HCLA	HCE	HDI
Pressure ranges	2.5 to 75 mbar	10 mbar to 5 bar	10 mbar to 5 bar
Pressure ranges	1 to 30 inH2O	4 inH2O to 70 psi	4 inH2O to 70 psi
Pressure type	Gage, Differential	Absolute, Gage, Differential	Absolute, Gage, Differential
Output signal	0.25-4.25 V, I²C bus	0.25-4.25 V, SPI bus	0.5-4.5 V, I²C bus
Accuracy, non-linearity	±0.05 %FSS	±0.1 %FSS	±0.1 %FSS
Accuracy, total accuracy	N.A.	±0.5 %FSS	±0.5 %FSS (P-grade)
Accuracy, total accuracy	N.A.	±0.5 %FSS	±1.5 %FSS (H-grade)
Temp. range operating	-25-85°C	-25-85°C	-20-85 °C
Dimensions without connections	13×16×7mm³	13×16×7mm³	12×15×7mm³
Features	Digital signal conditioning	Digital signal conditioning	Digital signal conditioning
	For very low pressures	Very high total accuracy	Very high total accuracy
	Excellent offset stability and virtually no position sensitivity	SPI bus interface and analogue output \at the same time	I²C bus interface and analogue output at the same time
	I²C bus interface and analogue output at the same time	SPI bus interface and analogue output \at the same time	Different accuracy classes available

Model	LBA	LDE
Pressure ranges	25 to 500 Pa	25 to 500 Pa
Pressure ranges	0.1 to 2 inH2O	0.1 to 2 inH2O
Pressure type	Gage, Differential	Gage, Differential
Output signal	0.5-4.5 V	0.5-4.5 V, SPI bus
Offset stability	0.3 % p.a.	0.1 % p.a.
Accuracy, total accuracy	±1.5 %FSS	±1.5 %FSS
Dimensions without connections	13×18×8mm³	13×18×8mm³
Features	Unmatched sensitivity and resolution	Unmatched offset stability, linearity, sensitivity and resolution
	Analogue signal conditioning	Digital signal conditioning with SPI bus interface and analogue output at the same time
	Micro-flow channel integrated within sensor chip	Micro-flow channel integrated within sensor chip
	High immunity to dust, humidity and long tubing	High immunity to dust, humidity and long tubing
	Miniature housing	Miniature housing

Model	HMA	HMI	HME
Pressure ranges	100 mbar to 10 bar	100 mbar to 10 bar	101 mbar to 10 bar
Pressure ranges	1 to 150 psi	1 to 150 psi	1 to 150 psi
Pressure type	Gage, Differential	Gage, Differential	Gage, Differential
Output signal	0.5-4.5 V	I²C bus	SPI bus
Accuracy, non-linearity	±0.25 %FSS	±0.25 %FSS	±0.25 %FSS
Accuracy, total accuracy	±1.5 %FSS	±1.5 %FSS	±1.5 %FSS
Temp. range compensated	-20-85°C	-20-85°C	-20-85°C
Dimensions without connections	10×13×6mm³	10×13×6mm³	10×13×6mm³
Features	Increased media compatibility for gases and liquids	Increased media compatibility for gases and liquids	Increased media compatibility for gases and liquids
	Digital signal conditioning	Digital signal conditioning	Digital signal conditioning
	Analogue output signal	I²C bus interface	SPI bus interface
	Very small housings	Very small housings	Very small housings

Model	SSO	SSI	KMA
Pressure ranges	200 mbar to 35 bar	200 mbar to 35 bar	500 mbar to 100 bar
Pressure ranges	3 to 500 ps	3 to 500 psi	7 to 1500 psi
Pressure type	Absolute, Gage	Absolute, Gage	Gage
Output signal	100mV (FSO)	0.5-4.5V, I²C bus	0.5-4.5V
Accuracy, non-linearity	±0.1 %FSS	±0.1 %FSS	±0.4 %FSO
Accuracy, total accuracy	±1.5 %FSS	±1.5 %FSS	±1.5 %FSS
Temp. range compensated	0-50°C	-20-85°C	0-85°C
Temp. range operating	-40-125°C	-40-120°C	-20-85°C
Dimensions without connections	Φ19mm	Φ19mm	Φ22×27mm
Features	High media compatibility	High media compatibility	High media compatibility
	Fully welded stainless steel construction	Fully welded stainless steel construction	Ceramic pressure sensor element in stainless steel housing
		Very high total accuracy
		I²C bus interface and analogue
		output at the same time	Digital signal conditioning

压力传感器芯片

供应压力传感器芯片，基于高级电阻传感技术(STARe, Sensor Technology for Advanced Resistors)。该系列压力传感器芯片具有稳定性高、适用于恶劣环境的特点，广泛应用于腐蚀性、流动性、油性环境下的高精密压力传感测量，包括：汽车制造、工业、医疗、大型家电。

　

Type	Pressure range	min.	typ.	max.	Unit
Standard Line STARe for pressure measurements of 1 to 30 bar
SL21K-100k-A/GXX	100 kPa	40	70	130	mV@5V
SL21K-250k-A/GXX	250 kPa	60	100	140	mV@5V
SL21K-500k-A/GXX	500 kPa	60	100	140	mV@5V
SL21K-01M0-A/GXX	1.0 MPa	60	100	140	mV@5V
SL21K-03M0-A/GXX	3.0 MPa	60	100	140	mV@5V
Industrial Line STARe for pressure measurements of 100 mbar to 400 bar
IL20L-10k0-GXX	10 kPa	30	60	120	mV@5V
IL20L-35k0-A/GXX	35 kPa	40	100	160	mV@5V
IL20M-03M0-A/GXX	3.0 MPa	60	100	140	mV@5V
IL20M-100k-A/GXX	100 kPa	60	100	140	mV@5V
IL20M-250k-A/GXX	250 kPa	60	100	140	mV@5V
IL20M-500k-A/GXX	500 kPa	60	100	140	mV@5V
IL20M-01M0-A/GXX	1.0 MPa	60	100	140	mV@5V
IL20M-10M0-A/GXX	10.0 MPa	200	250	300	mV@5V
IL20M-40M0-AXX	40.0 MPa	230	290	350	mV@5V
High Stability Line STARe for pressure measurements of 60 mbar to 400 bar
HS20V-06k0-A/G/D05	6 kPa	60	100	140	mV@5V
HS20V-10k0-A/G/D05	10 kPa	60	100	140	mV@5V
HS20L-35k0-A/G/DXX	35 kPa	60	100	140	mV@5V
HS20L-100k-A/G/DXX	100 kPa	60	100	140	mV@5V
HS20M-250k-A/G/DXX	250 kPa	60	100	140	mV@5V
HS20M-500k-A/G/DXX	500 kPa	60	100	140	mV@5V
HS20M-01M0-A/G/DXX	1.0 MPa	60	100	140	mV@5V
HS20M-03M0-A/G/XX	3.0 MPa	60	100	140	mV@5V
HS20M-10M0-A/GXX	10.0 MPa	200	250	300	mV@5V
HS20M-20M0-A08	20.0 MPa	60	100	140	mV@5V
HS20M-40M0-A08	40.0 MPa	60	100	140	mV@5V
Harsh Environmental Line for pressure measurements of 2 bar to 16 bar
HE11C-200K-AXX	200 kPa	60	100	140	mV@5V
HE11C-400K-AXX	400 kPa	60	100	140	mV@5V
HE11C-800K-AXX	800 kPa	60	100	140	mV@5V
HE11C-01M6-AXX	1.6 MPa	60	100	140	mV@5V

压力传感器模块

供应压力传感器模块，具有极高的长期稳定性、极低的压力与温度滞后、适用于高静态压力、快速响应、高电阻的特点。该系列压力传感器模块广泛应用于，包括：工业、医学领域。

　

Type	Pressure range	min.	typ.	max.	Unit
K-Serie STARe A/G for absolute and relative pressure requirements
K10-HS20V-06k0-A/GXX	6 kPa	60	100	140	mV@5V
K10-HS20V-10k0-A/GXX	10 kPa	60	100	140	mV@5V
K10-HS20L-35k0-A/GXX	35 kPa	60	100	140	mV@5V
K10-HS20L-100k-A/GXX	100 kPa	60	100	140	mV@5V
K10-HS20M-250k-A/GXX	250 kPa	60	100	140	mV@5V
K10-HS20M-500k-A/GXX	500 kPa	60	100	140	mV@5V
K10-HS20M-01M0-A/GXX	1.0 MPa	60	100	140	mV@5V
K10-HS20M-03M0-A/GXX	3.0 MPa	60	100	140	mV@5V
K10-HS20M-10M0-A/GXX	10.0 MPa	200	250	300	mV@5V
K10-HS20M-20M0-A08	20.0 MPa	60	100	140	mV@5V
K10-HS20M-40M0-A08	40.0 MPa	60	100	140	mV@5V
K-Series STARe D for differential pressure requirements
K10-HS20V-06k0-DXX	6 kPa	60	100	140	mV@5V
K10-HS20L-10k0-DXX	10 kPa	60	100	140	mV@5V
K10-HS20L-35k0-DXX	35 kPa	60	100	140	mV@5V
K10-HS20L-100k-DXX	100 kPa	60	100	140	mV@5V
K10-HS20M-250k-DXX	250 kPa	60	100	140	mV@5V
K10-HS20M-500k-DXX	500 kPa	60	100	140	mV@5V
K10-HS20M-01M0-DXX	1.0 MPa	60	100	140	mV@5V

Products

Contact us to find the perfect sensor solution for your specific application. We will be happy to develop sensors or systems to suit your individual requirements.

Detectors

Avalanche photodiodes (APD) and PIN photodiodes; position sensitive PDs (PSD) and quadrant PDs (QP) [more]
Emitters

LEDs and Laser Diodes [more]
Radiation Sensors

Alpha-, beta-, and gamma-, as well as x-ray radiation [more]
Pressure sensor chips

Absolute, relative and differential pressure from 60 mbar to 400 bar [more]
Pressure sensor components

Absolute, relative and differential pressure from 60 mbar to 400 bar [more]
Pressure sensors

Pressure sensors and custom pressure measurement systems [more]
Flow Sensors

State-of-the-art sensors for measuring mass and volumetric flow rates [more]
Liquid Level Sensors

Extensive range of hydrostatic and optical sensors für liquid level monitoring [more]

Detectors

First Sensor offers a wide range of photodiodes with high sensitivity, high speed and low dark currents.

Our detectors are optimized for ultraviolet, visible and ionizing radiation and can be combined with SMD (surface mount device), THD (through hole device) and TO (metal cans) housing technologies.

PIN photodiodes

Photodiodes without internal gain [more]
Avalanche photodiodes (APD)

Photodiodes with internal gain [more]
Avalanche photodiode arrays (APD arrays)

Photodiode arrays with multiple individual sensors, e.g. 8, 16, 32 pixels [more]
Position-sensitive diodes (PSD)

Duo-lateral photodiodes with high spatial resolution [more]
Quadrant photodiodes (QP) – QP series

Photodiodes with 4 segments [more]
Wavelength-sensitive diodes (WS) – WS series

Stacked photodiodes for wavelength measurement [more]
Detectors for ionizing radiation

Photodiodes with or without scintillator for measurement of α, β and γ radiation [more]