Application:
High Speed InGaAs p-i-n Photodiode
Description:
The 13PD100-FC, an InGaAs photodiode with a 100µm-diameter
photosensitive region packaged in a TO-46 header and aligned
in an FC active device mount, is intended for high speed and
low noise applications. Planar semiconductor design and dielectric
passivation provide superior low noise performance. Reliability
is assured by hermetic sealing and 100% purge burn-in ( 200°C,
15 hours, Vr = 20V ).
Features:
Planar Structure
Dielectric Passivation
100% Purge Burn-in
High Responsivity
|
| Operating Voltage Max |
-20
|
| Dark Current nA Typ |
0.2
|
| Dark Current nA Max |
2
|
| Capacitance pF Typ |
0.7
|
| Capacitance pF Max |
0.9
|
| Responsivity A/W Min |
0.65
|
| Responsivity A/W Typ |
0.8
|
| Rise/Fall ns Max |
0.5
|
| Frequency Response GHz Typ |
1.5
|
| Backreflection (STD) dB Typ |
-
|
| Backreflection (-LBR) dB Typ |
-
|
|
