Application:
High Speed InGaAs p-i-n Photodiode
Description:
The 13PD55-TO, an InGaAs photodiode with a 55µm-diameter
photosensitive region and packaged in a TO-46 header, is intended
for high speed and low noise applications in telecommunications
and data communications systems. Planar semiconductor design
and dielectric passivation provide very low noise performance.
Reliability is assured by hermetic sealing and 100% purge
burn-in (200°C, 15 hours, Vr = 20V). Headers are available
with either a lensed or flat window cap. Chips can also be
attached and wire bonded to customer-supplied or other specified
packages.
Features:
Planar Structure
Dielectric Passivation
100% Purge Burn-in
High Responsivity
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Related Information
Other information:
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Custom packaging is also available. |
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| Operating Voltage Max |
-30
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| Dark Current nA Typ |
0.05
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| Dark Current nA Max |
2
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| Capacitance pF Typ |
0.55
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| Capacitance pF Max |
0.75
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| Responsivity A/W Min |
0.80
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| Responsivity A/W Typ |
0.90
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| Rise/Fall ns Max |
0.5
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| Frequency Response GHz Typ |
4
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| Backreflection (STD) dB Typ |
-
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| Backreflection (-LBR) dB Typ |
-
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