Application:
High Speed InGaAs p-i-n Photodiode
Description:
The 13PD75-S, an InGaAs photodiode with a 75µm-diameter
photosensitive region mounted on a metallized ceramic substrate,
is intended for high speed and low noise applications. The
diameter of the photosensitive region is sufficiently small
to enable operation at low dark current and low capacitance
and yet large enough to allow efficient coupling to multi-mode
fiber. Planar semiconductor design and dielectric passivation
provide very low noise performance. Reliability is assured
by 100% purge burn-in (200°C, 15 hours, Vr = 20V). Chips
can also be attached and wire bonded to customer-supplied
or other specified submounts.
Features:
Planar Structure
Dielectric Passivation
100% Purge Burn-in
High Responsivity
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Related Information
Other information:
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Custom packaging is also available. |
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| Operating Voltage Max |
-20
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| Dark Current nA Typ |
0.2
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| Dark Current nA Max |
2
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| Capacitance pF Typ |
0.4
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| Capacitance pF Max |
0.6
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| Responsivity A/W Min |
0.8
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| Responsivity A/W Typ |
0.9
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| Rise/Fall ns Max |
0.5
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| Frequency Response GHz Typ |
1.5
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| Backreflection (STD) dB Typ |
-
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| Backreflection (-LBR) dB Typ |
-
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