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Application:
High Speed InGaAs p-i-n Photodiode
Description:
The 13PD75-ST, SMA, FC, SC, an InGaAs photodiode with a 75µm-diameter
photosensitive region packaged in a TO-46 header and aligned
in an AT&T ST active device mount, is intended for high
speed and low noise applications. Planar semiconductor design
and dielectric passivation provide superior low noise performance.
Reliability is assured by hermetic sealing and 100% purge
burn-in (200°C, 15 hours, Vr = 20V). The ST receptacle
is suitable for bulkhead and PC Board mounting.
Features:
Planar Structure
Dielectric Passivation
100% Purge Burn-in
High Responsivity
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| Operating Voltage Max |
-20
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| Dark Current nA Typ |
0.2
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| Dark Current nA Max |
2
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| Capacitance pF Typ |
0.7
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| Capacitance pF Max |
0.9
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| Responsivity A/W Min |
0.65
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| Responsivity A/W Typ |
0.8
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| Rise/Fall ns Max |
0.5
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| Frequency Response GHz Typ |
1.5
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| Backreflection (STD) dB Typ |
-
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| Backreflection (-LBR) dB Typ |
-
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