Application:
High Speed InGaAs p-i-n Photodiode
Description:
The 13PD75LDC-S an InGaAs photodiode with a 75µm-diameter
photosensitive region and mounted on a metallized ceramic
substrate, is a low-dark-current version on the 13PD75 intended
for high speed and low noise applications. The diameter of
the photosensitive region is sufficiently small to enable
operation at low dark current and low capacitance while offering
efficient coupling to multi-mode fiber. Planar semiconductor
design and dielectric passivation provide superior noise performance.
Reliability is assured by hermetic sealing and a 100% purge
burn-in (200°C, 15 hours, Vr = 15V).
Features:
Planar Structure
Dielectric Passivation
100% Purge Burn-in
High Responsivity
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Related Information
Other information:
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Custom packaging is also available. |
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| Operating Voltage Max |
-20
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| Dark Current nA Typ |
-
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| Dark Current nA Max |
0.11
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| Capacitance pF Typ |
0.4
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| Capacitance pF Max |
0.6
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| Responsivity A/W Min |
0.8
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| Responsivity A/W Typ |
0.9
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| Rise/Fall ns Max |
0.5
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| Frequency Response GHz Typ |
1.5
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| Backreflection (STD) dB Typ |
-
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| Backreflection (-LBR) dB Typ |
-
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