Application:
High Speed InGaAs p-i-n Photodiode
Description:
The 13PD75LDC-ST, -SMA, -FC, -SC, an InGaAs photodiode with
a 75µm-diameter photosensitive region packaged in a
TO-46 header and aligned in an AT&T ST active device mount,
is a low-dark-current version of the 13PD75-ST intended for
high speed and low noise applications. Planar semiconductor
design and dielectric passivation provide superior low noise
performance. Reliability is assured by hermetic sealing and
100% purge burn-in (200°C, 15 hours, Vr = 20V). The ST
receptacle is suitable for bulkhead and PC Board mounting.
Features:
Planar Structure
Dielectric Passivation
100% Purge Burn-in
High Responsivity
|
| Operating Voltage Max |
-20V
|
| Dark Current nA Typ |
.11
|
| Dark Current nA Max |
-
|
| Capacitance pF Typ |
0.70
|
| Capacitance pF Max |
0.90
|
| Responsivity A/W Min |
0.65
|
| Responsivity A/W Typ |
0.8
|
| Rise/Fall ns Max |
0.5
|
| Frequency Response GHz Typ |
1.5 (Typ)
|
| Backreflection (STD) dB Typ |
-
|
| Backreflection (-LBR) dB Typ |
-
|
|
